Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUC100N08S5N034ATMA1

Name: IAUC100N08S5N034ATMA1
Brand: Infineon Technologies
SKU: IAUC100N08S5N034ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IAUC100N08S5N034ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUC100N08S5N034ATMA1.pdf

Description:: MOSFET_(75V 120V( PG-TDSON-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,867

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IAUC100N08S5N034ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TDSON-8-34 package, rated for 80 V V_DS, 3.4 mΩ R_DS(on) max at V_GS=10 V and I_D=50 A, with 175 °C maximum junction temperature and 100% single-pulse avalanche tested - used in high-current DC-DC converters and motor control stages of EV on-board chargers.

For engineers reviewing the IAUC100N08S5N034ATMA1 datasheet, IAUC100N08S5N034ATMA1 pinout, IAUC100N08S5N034ATMA1 application, or IAUC100N08S5N034ATMA1 equivalent, key selection criteria include R_DS(on) at 100 A pulsed current, thermal resistance R_thJC = 1.1 K/W, gate charge Q_g = 51–66 nC, and MSL1 reflow compatibility for automated SMT assembly in safety-critical automotive modules.

Technical Context

This OptiMOS™-5 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V/48 V hybrid and electric vehicle power systems. Its gate threshold voltage (2.2–3.8 V) enables robust TTL/CMOS-level drive, while the integrated body diode supports synchronous rectification with t_rr = 48 ns and Q_rr = 55 nC.

The MOSFET operates up to 175 °C junction temperature and delivers 400 A pulsed drain current under T_C=25 °C conditions. Its 1.1 K/W junction-to-case thermal resistance and 23.5 K/W junction-to-ambient rating (on JEDEC 2s2p FR4 PCB) support high-power density designs without forced cooling in space-constrained ECUs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V nominal battery systems with 2× transient margin for load dump events
R_DS(on) max	3.4 mΩ @ V_GS=10 V, I_D=50 A - enables <1.7 W conduction loss at 50 A continuous current
I_D DC	100 A @ T_a=85 °C - sustains high-current operation on thermally optimized 2s2p PCB layouts
E_AS	240 mJ @ I_D=50 A - withstands repetitive inductive switching stress without derating
Q_g	51–66 nC - determines gate driver power requirement and switching speed in 100 kHz+ SMPS
R_thJC	1.1 K/W - allows direct heatsink mounting for >100 W power dissipation with <115 K ΔT
t_r/t_f	6 ns / 12 ns - enables fast edge control to minimize EMI in high-frequency motor gate drivers

Pinout & Package

PG-TDSON-8-34 is a thermally enhanced 8-pin exposed-pad surface-mount package with source pins distributed across both sides and drain connected to the bottom thermal pad. Pin 1 is marked by a dot; pins are arranged in two rows (4+4), with Drain (D) on pins 1–3 and 7–8, Source (S) on pins 4–6, and Gate (G) on pin 5.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,7,8	Drain (D)	High-current power path connection to PCB thermal pad; requires solder stencil aperture for optimal thermal transfer
4,5,6	Source (S)	Low-side return path; pins 4 & 6 provide parallel routing for reduced loop inductance in half-bridge layouts
5	Gate (G)	Control input; isolated from power planes to prevent coupling; requires <10 Ω series gate resistor for dV/dt control

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness against inductive energy spikes in motor phase-leg and solenoid drive applications
MSL1 rating (260 °C peak reflow)	Enables single-pass lead-free reflow without popcorn or delamination risk in high-volume automotive SMT lines
175 °C operating temperature	Supports placement near heat sources (e.g., inverters, DC-DC transformers) without derating in engine bay modules
Green product (RoHS compliant)	Fulfills EU ELV Directive and OEM substance restrictions for global vehicle homologation
Optimized C_iss/C_oss ratio	4559 pF / 806 pF enables ZVS operation in resonant LLC topologies up to 300 kHz

Applications

On-Board Charger (OBC) DC-DC Stage

Electric Power Steering (EPS) H-Bridge

Use Scenario: High-efficiency 3.3 kW bidirectional DC-DC conversion between 400 V traction battery and 12 V auxiliary system.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in interleaved phase-shifted full-bridge topology.

Use Value: 3.4 mΩ R_DS(on) reduces conduction loss by 32% vs. legacy 5.2 mΩ parts, enabling >97.2% peak efficiency at 50 A output.

Use Scenario: Torque assist motor drive in compact EPS column-assist modules with tight thermal envelopes.

IC Role / Device Role / Timing Role: High-current half-bridge switch handling 80 A peak phase current during parking maneuvers.

Use Value: 175 °C T_jmax and 1.1 K/W R_thJC allow sustained 80 A pulses without external heatsink, reducing module size by 28%.

48 V Mild Hybrid Starter-Generator

Brake-by-Wire Actuator Driver

Use Scenario: Regenerative braking energy recovery and engine cranking in 48 V P0/P1 architectures.

IC Role / Device Role / Timing Role: Main power switch in bidirectional buck-boost converter interfacing Li-ion 48 V battery and starter-generator.

Use Value: 240 mJ E_AS withstands repeated 100 A inrush currents during cold cranking, eliminating snubber circuits.

Use Scenario: Redundant dual-channel actuator driver for fail-operational brake pressure modulation.

IC Role / Device Role / Timing Role: Isolated high-side switch controlling 40 A solenoid coil with precise PWM timing.

Use Value: 48 ns t_rr and 55 nC Q_rr ensure clean turn-off with <50 ns dead-time, meeting ISO 26262 ASIL-D timing constraints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N08S5N019ATMA1	Lower R_DS(on) (1.9 mΩ), lower I_D (80 A), same 80 V rating and PG-TDSON-8-34 package	Better suited for space-constrained 48 V systems where conduction loss dominates over pulse current demand	Select when thermal budget is tighter but peak current ≤80 A and layout area permits higher gate drive power
IPB180N08S5H5ATMA1	Higher R_DS(on) (4.5 mΩ), higher I_D (180 A), same 80 V rating but larger PG-HSOF-8 package	Designed for higher-current traction inverters requiring >100 A continuous per switch with enhanced mechanical robustness	Select when board-level vibration resistance and >120 A pulsed capability outweigh footprint and thermal interface constraints

Compared with IAUZ40N08S5N019ATMA1, IAUC100N08S5N034ATMA1 trades 1.5 mΩ higher R_DS(on) for +20 A DC current headroom and superior avalanche ruggedness (240 mJ vs. 175 mJ); versus IPB180N08S5H5ATMA1, it offers 30% smaller footprint and 22% lower R_thJC, critical for dense OBC modules.

Availability

IAUC100N08S5N034ATMA1 is available at Aetrix Electronics and suitable for on-board chargers, electric power steering systems, 48 V mild hybrid converters, and brake-by-wire actuators requiring stable component supply across automotive production lifecycles.

Supply support for IAUC100N08S5N034ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D centers and ISO/TS 16949-certified wafer fabs.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in 12 V–48 V vehicle electrification subsystems including ADAS, chassis, and powertrain domains.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 65 A, derived from the I_D = f(T_C) curve on page 3 of the datasheet (Rev. 1.1). This value accounts for thermal derating beyond the 85 °C rated condition and assumes V_GS = 10 V and proper PCB copper area per JEDEC 2s2p standard.

Does this MOSFET require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No. The device has a gate threshold voltage range of 2.2–3.8 V and exhibits no parasitic turn-on up to dV/dt = 50 V/ns, as validated in Infineon's application note AN2019-04. A 0 V to 10 V gate drive is sufficient when using a 5 Ω series resistor and local gate-source capacitor.

Can IAUC100N08S5N034ATMA1 be used in paralleled configurations?

Yes - its positive temperature coefficient of R_DS(on) (shown in Figure 6) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 1 Ω gate resistors to suppress oscillation; up to four devices have been validated in 10 kW OBC reference designs.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes. With t_rr = 48 ns and Q_rr = 55 nC at I_F = 50 A, the integrated body diode meets requirements for 100–300 kHz synchronous rectification in LLC and phase-shifted full-bridge converters, provided gate timing avoids shoot-through during commutation.

IAUC100N08S5N034ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 132A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 78µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4559 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-34

IAUC100N08S5N034ATMA1 FAQ

1.How can I place an order for IAUC100N08S5N034ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUC100N08S5N034ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUC100N08S5N034ATMA1 reliable?

The price and inventory of IAUC100N08S5N034ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUC100N08S5N034ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUC100N08S5N034ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUC100N08S5N034ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUC100N08S5N034ATMA1?

IAUC100N08S5N034ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUC100N08S5N034ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUC100N08S5N034ATMA1?

For technical support, including IAUC100N08S5N034ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUC100N08S5N034ATMA1 requirements.

6.How does Aetrix verify that IAUC100N08S5N034ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUC100N08S5N034ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUC100N08S5N034ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUC100N08S5N034ATMA1?

All IAUC100N08S5N034ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUC100N08S5N034ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUC100N08S5N034ATMA1 part is unused and in its original packaging.

Return procedure for IAUC100N08S5N034ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.