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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUC100N10S5L054ATMA1

Name: IAUC100N10S5L054ATMA1
Brand: Infineon Technologies
SKU: IAUC100N10S5L054ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUC100N10S5L054ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUC100N10S5L054ATMA1.pdf

Description:: MOSFET_(75V 120V( PG-TDSON-8

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Product details

Overview

IAUC100N10S5L054ATMA1 from Infineon Technologies is an N-channel enhancement-mode logic-level OptiMOS™-5 power MOSFET designed for high-current automotive switching applications. It delivers 100 V V_DS, 5.4 mΩ R_DS(on) at V_GS = 10 V and I_D = 50 A, operates up to 175 °C junction temperature, and is 100% avalanche tested - enabling robust use in engine control units and DC-DC converters.

For engineers reviewing the IAUC100N10S5L054ATMA1 datasheet, IAUC100N10S5L054ATMA1 pinout, IAUC100N10S5L054ATMA1 application, or IAUC100N10S5L054ATMA1 equivalent, key selection criteria include its 1.15 K/W R_thJC, 400 A pulsed drain current capability, integrated body diode with 49 ns t_rr, and PG-TDSON-8-34 package compatibility with high-power thermal management requirements.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its logic-level gate drive (V_GS(th) = 1.2–2.2 V) enables direct interface with microcontrollers, while the 3.2 V gate plateau voltage supports stable turn-on under varying load conditions.

The device integrates a fast-recovery body diode (t_rr = 49 ns, Q_rr = 65 nC) and exhibits low dynamic capacitances (C_iss = 3744 pF, C_oss = 605 pF), supporting high-frequency PWM operation in traction inverters and on-board chargers without excessive gate drive power demand.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands full automotive battery transients including load dump up to ISO 7637-2 Pulse 5a.
R_DS(on) max	5.4 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1.5 W conduction loss at 100 A continuous system current with proper heatsinking.
I_D (DC)	100 A at T_C = 25 °C - Supports high-current motor drives and starter-generator interfaces without derating in compact layouts.
E_AS	64 mJ at I_D = 50 A - Guarantees single-pulse avalanche ruggedness during inductive switching faults in solenoid or relay drivers.
R_thJC	1.15 K/W - Allows direct thermal coupling to cold plates or chassis for >100 W steady-state power dissipation in automotive modules.
t_rr	49 ns - Minimizes reverse recovery losses and EMI in synchronous rectification and bidirectional DC-DC topologies.
Q_g	53 nC max - Determines gate driver sizing; compatible with standard 2 A peak gate drivers at 100 kHz switching frequency.

Pinout & Package

Package: PG-TDSON-8-34 - thermally enhanced 8-pin exposed-drain DSO-style leadless package with 3.4 mm × 3.3 mm footprint and 0.65 mm pitch; bottom-side thermal pad enables direct PCB copper thermal spreading.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain (common source connection)	All eight pins are internally connected to the drain terminal and thermal pad - provides low-inductance, high-current path and primary heat conduction route to PCB.
Source (pins 1–7 via internal tie)	Source node (non-isolated)	Source terminals are accessible only through dedicated source pins (not shared with drain); requires separate PCB routing for Kelvin sensing or low-noise gate referencing.
Gate (pin 8)	Control input	Single gate input pin located adjacent to source for minimized loop inductance; layout must avoid coupling to high-dv/dt drain nodes.

Key Features

Feature	Design Value
100% Avalanche Tested	Every unit validated for single-pulse avalanche energy ≥64 mJ - eliminates field failure risk in inductive load switching without external snubbers.
Logic-Level Gate Drive	V_GS(th) range 1.2–2.2 V - enables direct drive from 3.3 V or 5 V MCUs without level-shifting, reducing BOM count and layout complexity.
175 °C Operating Temperature	Rated for continuous operation up to T_j = 175 °C - supports placement near hot components (e.g., exhaust manifolds, power inductors) in engine bay modules.
MSL1 Reflow Rating	Qualified for peak reflow up to 260 °C - ensures reliability in high-volume SMT assembly with standard lead-free processes.
Green Product (RoHS)	Halogen-free, Pb-free, and RoHS-compliant construction - meets automotive ELV directive and global environmental compliance requirements.

Applications

Engine Control Unit (ECU) High-Side Switch

Automotive DC-DC Converter Primary Switch

Use Scenario: Switching 12 V battery power to fuel injectors, ignition coils, or cooling fans in harsh under-hood environments.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by MCU GPIO with bootstrap or isolated gate driver.

Use Value: 5.4 mΩ R_DS(on) minimizes voltage drop and self-heating during 10–30 A pulsed loads; 175 °C rating ensures reliability at ambient >125 °C.

Use Scenario: Primary-side switch in 48 V–12 V bi-directional buck-boost converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 100–200 kHz with active body diode commutation.

Use Value: 49 ns t_rr and 65 nC Q_rr reduce reverse recovery losses by >35% versus legacy MOSFETs, improving efficiency above 95% at 5 kW.

On-Board Charger (OBC) Input Stage

Traction Inverter Auxiliary Power Supply

Use Scenario: Input bridge switch in AC–DC PFC stage of 6.6 kW OBC, handling 32 A RMS line current.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in totem-pole PFC configuration with zero-voltage switching.

Use Value: Low C_oss (605 pF) and C_rss (35 pF) enable soft-switching down to 50 kHz, reducing EMI filter size and cost.

Use Scenario: Isolated auxiliary supply switch feeding gate drivers and MCU in main traction inverter.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in flyback or forward converter operating at 250 kHz.

Use Value: 1.15 K/W R_thJC allows >15 W continuous output without external heatsink, simplifying module packaging and thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N10N5L-ASE	R_DS(on) = 5.0 mΩ (lower), Q_g = 58 nC (higher), same PG-TDSON-8-34 package	Slightly higher gate charge increases driver loss at >200 kHz; better for lower-frequency, higher-current applications	Prefer when minimizing conduction loss dominates over switching loss in <100 kHz designs.
IAUZ40N10S5L054ATMA1	Lower I_D rating (40 A vs. 100 A), identical R_DS(on) and thermal specs, same footprint	Not suitable for >50 A continuous loads; intended for space-constrained sub-systems with lower current demands	Select only when board area is critical and peak current remains ≤40 A with margin.

Compared with IPB180N10N5L-ASE and IAUZ40N10S5L054ATMA1, IAUC100N10S5L054ATMA1 uniquely balances 100 A DC current capability, 5.4 mΩ on-resistance, and 49 ns body diode recovery - making it optimal for high-power, high-temperature automotive switching where both current density and dynamic performance matter.

Availability

IAUC100N10S5L054ATMA1 is available at Aetrix Electronics and suitable for engine control units, on-board chargers, and traction inverter auxiliary supplies requiring stable component supply across extended automotive lifecycles.

Supply support for IAUC100N10S5L054ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap devices.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V/48 V vehicle electrical architectures under extreme thermal and transient stress.

FAQ

What is the maximum allowable gate-source voltage for IAUC100N10S5L054ATMA1?

The absolute maximum V_GS is ±20 V per datasheet Rev. 1.1. Operation beyond ±16 V risks permanent gate oxide damage, especially during fast dv/dt events. Recommended gate drive is 10 V for full R_DS(on) utilization and 4.5 V for logic-level compatibility - never exceed 15 V in production designs without clamping.

Does IAUC100N10S5L054ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 100 kHz PWM with a 2 A peak gate driver, a 3.5 Ω external resistor is characterized in the datasheet (page 3). Lower values increase switching speed but raise EMI; higher values reduce ringing but increase switching losses. Layout parasitics must be minimized regardless of R_G choice.

Can IAUC100N10S5L054ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (see page 5, Fig. 6) enables inherent current sharing. Successful paralleling requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors. Thermal coupling between devices must be uniform; derating to 80% of total rated current is advised for long-term reliability.

Is the body diode suitable for synchronous rectification in DC-DC converters?

Yes - the body diode is fully characterized with t_rr = 49 ns and Q_rr = 65 nC at T_j = 25 °C (page 3). It supports synchronous rectification up to 200 kHz in buck converters. However, reverse recovery behavior degrades above 125 °C; for >150 kHz or >100 °C operation, external Schottky or GaN-based solutions may offer better efficiency.

IAUC100N10S5L054ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 101A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 64µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3744 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-34

IAUC100N10S5L054ATMA1 FAQ

1.How can I place an order for IAUC100N10S5L054ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUC100N10S5L054ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUC100N10S5L054ATMA1 reliable?

The price and inventory of IAUC100N10S5L054ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUC100N10S5L054ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUC100N10S5L054ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUC100N10S5L054ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUC100N10S5L054ATMA1?

IAUC100N10S5L054ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUC100N10S5L054ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUC100N10S5L054ATMA1?

For technical support, including IAUC100N10S5L054ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUC100N10S5L054ATMA1 requirements.

6.How does Aetrix verify that IAUC100N10S5L054ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUC100N10S5L054ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUC100N10S5L054ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUC100N10S5L054ATMA1?

All IAUC100N10S5L054ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUC100N10S5L054ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUC100N10S5L054ATMA1 part is unused and in its original packaging.

Return procedure for IAUC100N10S5L054ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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