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Infineon Technologies IAUC120N04S6N008ATMA1

Part No.:
IAUC120N04S6N008ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixIAUC120N04S6N008ATMA1.pdf
Description:
MOSFET_(20V 40V)
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,074

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Product details

Overview

IAUC120N04S6N008ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode OptiMOS™-6 power MOSFET in PG-TDSON-8-43 package, rated for 40 V VDS, 0.68 mΩ RDS(on) at VGS=10 V/60 A, and 175 °C operation. It delivers 120 A continuous drain current at TA=85 °C on a 2s2p FR4 PCB and supports high-current automotive power stages including 48 V mild-hybrid DC-DC converters.

For engineers reviewing the IAUC120N04S6N008ATMA1 datasheet, IAUC120N04S6N008ATMA1 pinout, IAUC120N04S6N008ATMA1 application, or IAUC120N04S6N008ATMA1 equivalent, key selection criteria include its 0.68 mΩ RDS(on), 100% avalanche-tested ruggedness (EAS=400 mJ), MSL1 reflow compatibility, and integrated body diode with trr=60 ns and Qrr=73 nC for synchronous rectification.

Technical Context

This device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-frequency automotive power conversion. Its gate plateau voltage of 4.1 V enables robust drive margin under noisy conditions, while the 0.9 Ω gate resistance supports controlled turn-on/turn-off timing without external gate resistors in many designs.

The MOSFET integrates a fast-recovery body diode (VSD=0.8–1.1 V at IF=60 A) with low Qrr and trr, enabling efficient hard-switched and synchronous rectifier topologies. Thermal design is supported by RthJC=1.0 K/W and validated operation up to 175 °C junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage for 48 V automotive bus applications
RDS(on) max0.80 mΩ at VGS=7 V/60 A - Enables <1 W conduction loss at 120 A in optimized layouts
ID continuous120 A at TA=85 °C on JEDEC 2s2p FR4 - Supports high-current motor drivers and DC-DC phases
EAS400 mJ single-pulse avalanche energy - Ensures robustness against inductive switching transients
trr60 ns - Reduces reverse recovery loss in synchronous buck and half-bridge configurations
Qg110 nC max - Determines gate driver power requirement and switching speed trade-offs
RthJC1.0 K/W - Enables direct thermal coupling to heatsink or copper plane for high-power density

Pinout & Package

Package: PG-TDSON-8-43 - Thermally enhanced 8-pin exposed-drain DSO-style leadless package with 3.3 mm × 3.3 mm footprint and 1.0 mm height; drain terminals occupy pins 1–3 and 5–8 for low-inductance, high-current routing.

Pin/TerminalCircuit RoleDesign Meaning
1,2,3,5,6,7,8Drain (D)High-current output path; electrically and thermally connected to exposed die paddle
4Source (S)Reference node for gate drive and current sensing; tied to PCB ground plane

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis systems per stress test requirements
100% avalanche testedEach unit subjected to single-pulse EAS stress at 400 mJ for field reliability
MSL1 ratingCompatible with standard 260 °C peak reflow profiles without moisture sensitivity concerns
175 °C operating temperatureEnables placement near heat sources (e.g., inverters, DC-DC cores) without derating
Green Product (RoHS)Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU

Applications

48 V Mild-Hybrid DC-DC ConverterAutomotive On-Board Charger (OBC) Input Stage

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in PHEV/HEV platforms.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz with zero-voltage switching support.

Use Value: 0.68 mΩ RDS(on) reduces conduction loss by >35% vs. legacy 1.2 mΩ devices, improving system efficiency above 95% at 5 kW.

Use Scenario: AC-DC front-end rectification and power factor correction in bidirectional OBC modules.

IC Role / Device Role / Timing Role: Low-side switch in totem-pole PFC stage handling 10–15 A RMS input current.

Use Value: 60 ns trr and 73 nC Qrr minimize dead-time losses and EMI generation during commutation.

Electric Power Steering (EPS) Motor Inverter12 V Automotive DC-AC Inverter

Use Scenario: Three-phase inverter driving brushless motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Phase-leg high- and low-side switch with 120 A peak current capability per phase.

Use Value: 175 °C rated junction temperature allows compact mechanical integration within EPS housing without active cooling.

Use Scenario: Compact 300–500 W inverter powering cabin accessories from vehicle battery.

IC Role / Device Role / Timing Role: Half-bridge switch in resonant LLC topology operating at 300–600 kHz.

Use Value: 1.0 K/W RthJC enables direct mounting to aluminum chassis for passive thermal management in space-constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IAUZ40N04S5N012ATMA1Higher RDS(on) (1.2 mΩ), lower ID (80 A), same 40 V rating and PG-TDSON-8 packageBetter suited for cost-sensitive 12 V systems with lower current demandSelect when thermal budget allows higher conduction loss and peak current ≤80 A
IPB180N04S4-02Same 40 V rating but TO-263 package, RDS(on)=0.95 mΩ, ID=180 A, no AEC-Q101 certificationIndustrial-grade alternative with higher current rating but not qualified for automotive safety-critical useUse only in non-automotive industrial power supplies where AEC-Q101 is not required

Compared with IAUZ40N04S5N012ATMA1 and IPB180N04S4-02, IAUC120N04S6N008ATMA1 uniquely combines AEC-Q101 compliance, 0.68 mΩ RDS(on), and 120 A current capability in a surface-mount PG-TDSON-8 package-enabling compact, high-efficiency 48 V automotive power stages without trade-offs in qualification or thermal performance.

Availability

IAUC120N04S6N008ATMA1 is available at Aetrix Electronics and suitable for 48 V mild-hybrid DC-DC converters, automotive on-board chargers, and electric power steering motor inverters requiring stable component supply across production lifecycles.

Supply support for IAUC120N04S6N008ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949.

This part belongs to the OptiMOS™-6 product line, engineered specifically for high-efficiency, high-reliability 48 V automotive power conversion with emphasis on low RDS(on), fast switching, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IAUC120N04S6N008ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with 4.1 V gate plateau ensuring reliable turn-on even with 2 V gate drive margin under noise or voltage drop.

Does IAUC120N04S6N008ATMA1 require external gate resistors in typical automotive applications?

Not necessarily: its intrinsic gate resistance is 0.9 Ω, which provides moderate dV/dt control. For 200–500 kHz switching in DC-DC converters, a 2.2–4.7 Ω external resistor is commonly used to balance EMI and switching loss; values below 1.5 Ω may increase ringing without significant efficiency gain.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The integrated body diode has VSD=0.8–1.1 V at 60 A and trr=60 ns, offering lower forward drop than silicon diodes but higher than Schottky alternatives. Its Qrr=73 nC is significantly lower than older MOSFET generations, making it viable for medium-frequency synchronous rectification where Schottky thermal limitations apply.

Is IAUC120N04S6N008ATMA1 suitable for paralleling multiple devices in high-current inverters?

Yes: its positive temperature coefficient for RDS(on) ensures current sharing stability across temperature gradients. Layout must maintain symmetrical gate drive paths and equal source inductance; thermal coupling via shared copper area improves matching. Derating to 100 A per device is recommended for long-term reliability in parallel configurations.

IAUC120N04S6N008ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
43A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Rds On (Max) @ Id, Vgs:
0.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:
3V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7150 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
150W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-43

IAUC120N04S6N008ATMA1 FAQ

1.How can I place an order for IAUC120N04S6N008ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUC120N04S6N008ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUC120N04S6N008ATMA1 reliable?

The price and inventory of IAUC120N04S6N008ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUC120N04S6N008ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUC120N04S6N008ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUC120N04S6N008ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

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IAUC120N04S6N008ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUC120N04S6N008ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUC120N04S6N008ATMA1?

For technical support, including IAUC120N04S6N008ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUC120N04S6N008ATMA1 requirements.

6.How does Aetrix verify that IAUC120N04S6N008ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUC120N04S6N008ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUC120N04S6N008ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUC120N04S6N008ATMA1?

All IAUC120N04S6N008ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUC120N04S6N008ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUC120N04S6N008ATMA1 part is unused and in its original packaging.

Return procedure for IAUC120N04S6N008ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IAUC120N04S6N008ATMA1 Tags

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