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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUC120N04S6N009ATMA1

Name: IAUC120N04S6N009ATMA1
Brand: Infineon Technologies
SKU: IAUC120N04S6N009ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUC120N04S6N009ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUC120N04S6N009ATMA1.pdf

Description:: MOSFET N-CH 40V 120A 8TDSON-33

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Product details

Overview

IAUC120N04S6N009ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode power MOSFET in PG-TDSON-8 package, rated for 40 V V_DS, 120 A continuous drain current at T_C = 25 °C, and 0.9 mΩ max R_DS(on) at V_GS = 10 V. It serves as a high-current low-side switch in automotive 12 V battery-connected systems including motor control, DC-DC converters, and load switching.

For engineers reviewing the IAUC120N04S6N009ATMA1 datasheet, IAUC120N04S6N009ATMA1 pinout, IAUC120N04S6N009ATMA1 application, or IAUC120N04S6N009ATMA1 equivalent, key selection criteria include its 175 °C operating temperature, 100% avalanche-tested ruggedness, MSL1 reflow compatibility, and optimized gate charge (Q_g = 76–115 nC) for fast-switching efficiency in high-frequency automotive power stages.

Technical Context

This OptiMOS™-6 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_g figure-of-merit, enabling high-efficiency synchronous rectification and PWM-driven loads. Its gate threshold voltage (V_GS(th) = 2.2–3.4 V) ensures robust turn-on with standard 5 V or 3.3 V logic-level gate drivers.

The integrated body diode exhibits low reverse recovery charge (Q_rr = 73 nC) and fast t_rr = 60 ns, supporting efficient freewheeling in inductive switching applications. Thermal resistance R_thJC = 1.0 K/W enables high-power operation with minimal heatsinking when mounted on 6 cm² copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Supports 12 V automotive battery systems with margin against load-dump transients up to 40 V.
R_DS(on) max	0.9 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 120 A, critical for high-current power distribution.
I_D cont.	120 A @ T_C = 25 °C - Package-limited current rating suitable for high-power motor drivers and starter relays.
E_AS	400 mJ - Confirmed single-pulse avalanche energy allows reliable operation under inductive switching stress without external snubbers.
Q_g	76–115 nC - Low total gate charge reduces driver power demand and switching losses in 100–500 kHz DC-DC topologies.
T_j max	+175 °C - Enables placement near hot engine compartments or under-hood ECUs without derating.
MSL Level	MSL1 - Compatible with standard 260 °C peak reflow profiles, eliminating moisture sensitivity handling requirements.

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad), 5.15 mm × 6.25 mm footprint, thermally enhanced surface-mount design with bottom-side thermal pad for direct PCB heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain Terminal (common source connection)	All pins 1–8 are internally connected to the exposed drain pad - provides low-inductance, high-current path and primary thermal conduction path to PCB.
Source (pins 1–8 side edge)	Source Connection	Not separately bonded; source is accessible only via dedicated source pads (typically pins 1–3 or 6–8 depending on layout - confirmed per Infineon PG-TDSON-8 standard pin map).
Gate (pin 5)	Control Input	Single gate input terminal; low gate resistance (R_G = 0.9 Ω typ.) minimizes ringing and supports fast edge rates with moderate-strength drivers.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use across temperature, humidity, vibration, and lifetime stress tests - required for engine control, ADAS, and chassis modules.
100% avalanche tested	Each unit subjected to single-pulse avalanche stress at I_AS = 60 A - guarantees ruggedness in inductive load switching without failure.
Green Product / RoHS compliant	Halogen-free, lead-free, and fully compliant with EU RoHS Directive 2011/65/EU - meets global automotive environmental standards.
Optimized gate charge profile	Q_gs/Q_gd ratio of ~1.7 supports clean Miller plateau transition and reduces risk of shoot-through in half-bridge configurations.
Low R_DS(on) × Q_g	0.9 mΩ × 95 nC ≈ 85.5 mΩ·nC - industry-leading FoM for 40 V automotive MOSFETs, directly improving system efficiency in 48 V mild-hybrid subsystems.

Applications

Engine Start-Stop System

Automotive DC-DC Converter

Use Scenario: Replaces mechanical relay in 12 V start-stop battery management to enable rapid, silent engine restarts during coasting.

IC Role / Device Role / Timing Role: High-current low-side switch controlling starter solenoid or battery disconnect path with <100 µs turn-on time.

Use Value: Eliminates contact wear and arcing; supports >100,000 cycles vs. ~50,000 for relays, while reducing EMI through controlled dv/dt.

Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converter powering infotainment and ADAS domain controllers.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 300–500 kHz with zero-voltage switching capability.

Use Value: Reduces conduction loss by 40% vs. Schottky diodes, enabling >95% conversion efficiency at 20 A output.

Electric Power Steering (EPS)

Body Control Module (BCM) Load Driver

Use Scenario: H-bridge phase leg in 12 V EPS motor driver delivering up to 80 A peak current per phase.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter with precise PWM timing and short-circuit protection response <2 µs.

Use Value: Enables compact motor drive design with <1.5 K/W total thermal resistance, allowing full torque delivery at ambient 105 °C.

Use Scenario: High-side or low-side load switch for headlights, HVAC fans, and seat motors in centralized BCM architecture.

IC Role / Device Role / Timing Role: Protected power switch with integrated overtemperature and overcurrent detection (via external sense resistor).

Use Value: Provides diagnostic feedback and failsafe shutdown - replaces discrete FET + protection IC solutions, saving 30% board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB120N04S4-02	R_DS(on) max = 1.2 mΩ @ 10 V; Q_g = 65 nC; same PG-TDSON-8 package	Higher conduction loss but lower gate drive power - better suited for lower-frequency (<100 kHz), higher-current (>150 A) applications	Select when thermal budget favors lower Q_g over R_DS(on), e.g., in large-area heatsinked industrial motor drives.
IAUZ40N04S5L027	R_DS(on) max = 0.27 mΩ @ 10 V; 40 V rating; PG-HSOF-8 package with larger thermal pad	Lower R_DS(on) but higher Q_g (120 nC); requires more aggressive gate driving and layout	Prefer for ultra-high-efficiency 48 V mild-hybrid DC-DC where <0.3 mΩ R_DS(on) justifies added gate drive complexity.

Compared with IPB120N04S4-02 and IAUZ40N04S5L027, IAUC120N04S6N009ATMA1 delivers optimal balance of low R_DS(on) (0.9 mΩ), moderate Q_g (95 nC avg.), and proven AEC-Q101 reliability - making it the preferred choice for mainstream 12 V automotive power stages requiring both efficiency and robustness.

Availability

IAUC120N04S6N009ATMA1 is available at Aetrix Electronics and suitable for automotive power distribution, electric power steering, and start-stop system designs requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for IAUC120N04S6N009ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-6 product line, engineered specifically for high-efficiency, high-reliability 12 V and 48 V automotive power conversion - targeting reduced system size, improved thermal performance, and compliance with stringent AEC-Q101 and ISO/TS 16949 requirements.

FAQ

What is the maximum allowable gate-source voltage for IAUC120N04S6N009ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable switching, gate drive should be clamped between 0 V and 10 V (typical logic-level drive), with transient overshoot limited to <12 V using gate resistors and Zener clamps.

Does IAUC120N04S6N009ATMA1 include integrated protection features?

No, this is a discrete power MOSFET without built-in protection circuitry. Overcurrent, overtemperature, and short-circuit protection must be implemented externally via current-sense resistors, microcontroller monitoring, or dedicated gate driver ICs such as Infineon's EiceDRIVER™ series.

Can IAUC120N04S6N009ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (increasing with junction temperature) enables stable current sharing. Successful parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors (≥5 Ω) to damp oscillation and ensure simultaneous turn-on.

What is the recommended PCB layout for thermal performance?

Mount the device on a minimum 6 cm² copper area (single-layer, 70 µm thick) connected directly to the exposed drain pad. Use ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) under the pad to inner ground/power planes. Keep source traces wide and short to minimize loop inductance in high-di/dt applications.

IAUC120N04S6N009ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 0.9mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 115 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-33

IAUC120N04S6N009ATMA1 FAQ

1.How can I place an order for IAUC120N04S6N009ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUC120N04S6N009ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUC120N04S6N009ATMA1 reliable?

The price and inventory of IAUC120N04S6N009ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUC120N04S6N009ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUC120N04S6N009ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUC120N04S6N009ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUC120N04S6N009ATMA1?

IAUC120N04S6N009ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUC120N04S6N009ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUC120N04S6N009ATMA1?

For technical support, including IAUC120N04S6N009ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUC120N04S6N009ATMA1 requirements.

6.How does Aetrix verify that IAUC120N04S6N009ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUC120N04S6N009ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUC120N04S6N009ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUC120N04S6N009ATMA1?

All IAUC120N04S6N009ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUC120N04S6N009ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUC120N04S6N009ATMA1 part is unused and in its original packaging.

Return procedure for IAUC120N04S6N009ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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