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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUC120N06S5N011ATMA1

Name: IAUC120N06S5N011ATMA1
Brand: Infineon Technologies
SKU: IAUC120N06S5N011ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUC120N06S5N011ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUC120N06S5N011ATMA1.pdf

Description:: MOSFET_)40V 60V)

Quantity:: RFQ Add To RFQ list

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Inventory:7,994

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Product details

Overview

IAUC120N06S5N011ATMA1 from Infineon is an automotive-grade N-channel enhancement-mode power MOSFET in PG-TDSON-8-53 package, rated for 60 V V_DS, 1.12 mΩ R_DS(on) at V_GS = 7 V / I_D = 30 A, and 310 A chip-limited continuous drain current. It supports high-efficiency motor control and DC-DC conversion in engine management and battery disconnect systems.

For engineers reviewing the IAUC120N06S5N011ATMA1 datasheet, IAUC120N06S5N011ATMA1 pinout, IAUC120N06S5N011ATMA1 application, or IAUC120N06S5N011ATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C operating temperature, MSL1 reflow rating, 100% avalanche testing, and low gate charge (Q_g = 105–137 nC) for fast switching in high-current automotive power stages.

Technical Context

This OptiMOS™-5 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V/48 V automotive systems. Its R_DS(on) remains stable across –55 °C to +175 °C, and it features a robust body diode with Q_rr = 75 nC and t_rr = 63 ns for synchronous rectification and bidirectional energy recovery.

The MOSFET delivers 485 W power dissipation at T_C = 25 °C with R_thJC = 0.80 K/W, enabling compact thermal design on 2s2p FR4 PCBs. Gate plateau voltage is 4.24 V, supporting reliable turn-on with standard 5 V or 10 V logic-level drivers in safety-critical power paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports full operation in 48 V automotive systems with margin against load dump transients.
R_DS(on)	1.12 mΩ @ V_GS = 7 V / I_D = 30 A - Enables <1.9 W conduction loss at 100 A, critical for high-current traction inverters and starter generators.
I_D (chip-limited)	310 A - Defines absolute maximum current capability before thermal runaway, independent of package limits.
Q_g	105–137 nC - Determines gate drive power and switching speed; enables <100 ns total switching time with 3.5 Ω gate resistor.
T_j max	+175 °C - Allows placement near hot zones (e.g., under-hood ECUs) without derating in continuous operation.
E_AS	39 mJ - Quantifies single-pulse avalanche ruggedness; ensures survival during inductive turn-off faults in solenoid or motor drives.
MSL Level	MSL1 up to 260 °C peak reflow - Guarantees solderability in standard lead-free SMT assembly lines without moisture sensitivity concerns.

Pinout & Package

Package: PG-TDSON-8-53 - Thermally enhanced 8-pin exposed-pad surface-mount package with top-side cooling capability and optimized thermal path to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (internally connected)	All pins electrically tied to the MOSFET drain terminal and thermal pad; must be soldered to large copper pour for heat dissipation.
6	Source	Low-side reference node for gate drive and current sensing; connects to source of internal die and external shunt/sense resistor.
G	Gate	Control input requiring 2.2–3.4 V threshold; driven by dedicated gate driver IC to minimize ringing and ensure clean turn-on/turn-off.

Key Features

Feature	Design Value
AEC-Q101 qualified beyond standard requirements	Extended reliability validation including enhanced electrical testing and 100% avalanche screening for functional safety compliance (ASIL-B/C).
Optimized for 12 V/48 V hybrid architectures	Low R_DS(on) and Q_g reduce both conduction and switching losses in dual-voltage battery systems and 48 V BLDC motor controllers.
Robust body diode with low Q_rr	75 nC reverse recovery charge and 63 ns t_rr enable efficient synchronous rectification and reduce EMI in buck/boost converters.
Thermally optimized PG-TDSON-8-53	0.80 K/W junction-to-case thermal resistance allows >400 W power handling with active heatsinking, supporting compact module designs.

Applications

Engine Start-Stop Control

48 V Mild Hybrid DC-DC Converter

Use Scenario: Managing battery isolation and cranking current during automatic engine restart in micro-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side power switch controlling 48 V bus connection between starter-generator and main battery.

Use Value: 310 A chip-limited current and 175 °C operation ensure reliable engagement even at elevated under-hood temperatures.

Use Scenario: Primary switching element in bidirectional buck-boost converter linking 12 V and 48 V domains in mild hybrid powertrain.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body diode recovery to minimize dead-time losses and improve efficiency above 95 %.

Use Value: 75 nC Q_rr and 63 ns t_rr reduce switching loss and voltage overshoot during hard commutation events.

Electric Power Steering (EPS) Inverter

Onboard Charger (OBC) Input Stage

Use Scenario: Phase-leg switching in three-phase inverter driving brushless motor in EPS system.

IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel MOSFET used in high-current half-bridge configuration with gate driver feedback loop.

Use Value: 1.12 mΩ R_DS(on) limits conduction loss to <1.2 W at 100 A, reducing heatsink size and improving torque response latency.

Use Scenario: Active front-end (AFE) switch in AC/DC stage of bidirectional OBC for EVs.

IC Role / Device Role / Timing Role: Fast-switching power transistor handling 60 A RMS input current with soft switching control.

Use Value: 137 nC max Q_g enables precise timing control and low EMI when paired with SiC gate drivers in PFC circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N06S5N024ATMA1	Higher R_DS(on) (2.4 mΩ), lower I_D (160 A), same 60 V rating and PG-TDSON-8-53 package.	Better suited for cost-sensitive 12 V auxiliary loads where peak current ≤120 A.	Select when thermal budget allows higher conduction loss and system current demand is below 150 A.
IPB180N06S4H02ATMA1	Same 60 V rating but older OptiMOS™-4 generation; R_DS(on) = 1.8 mΩ, Q_g = 150 nC, no extended AEC-Q101 testing.	Limited to non-safety-critical 12 V modules without ASIL requirements.	Choose only for legacy redesigns where footprint compatibility is mandatory and qualification scope is less stringent.

Compared with IAUZ40N06S5N024ATMA1 and IPB180N06S4H02ATMA1, IAUC120N06S5N011ATMA1 delivers the lowest R_DS(on) and highest current capability in its voltage class, making it optimal for new ASIL-B/C designs demanding minimal conduction loss and maximum thermal headroom.

Availability

IAUC120N06S5N011ATMA1 is available at Aetrix Electronics and suitable for engine start-stop control, 48 V mild hybrid DC-DC conversion, and electric power steering inverter applications requiring stable component supply and long-term automotive lifecycle support.

Supply support for IAUC120N06S5N011ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 48 V vehicle electrical architectures under ASIL-B/C functional safety constraints.

FAQ

What is the maximum allowable gate-source voltage for IAUC120N06S5N011ATMA1?

The absolute maximum gate-source voltage is ±20 V, per the datasheet's "Maximum ratings" table. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is 10 V for full enhancement, with 4.24 V gate plateau ensuring stable turn-on under varying temperature and load conditions.

Does IAUC120N06S5N011ATMA1 require a negative gate voltage for safe turn-off?

No - this N-channel MOSFET does not require negative gate drive. Its V_GS(th) range (2.2–3.4 V) and low leakage (<100 nA at V_GS = 20 V) allow safe turn-off with 0 V gate bias. However, applying –5 V improves noise immunity in high-dV/dt environments like motor phase legs.

How is the 310 A "chip-limited" current determined, and how does it differ from package-rated current?

The 310 A value reflects the silicon die's intrinsic current-handling limit before thermal runaway, derived from electrothermal simulation and validated via pulsed testing. It exceeds the package-limited 120 A (T_C = 25 °C, DC) due to superior die metallization and trench architecture - meaning actual usable current depends on PCB layout and heatsinking.

Can IAUC120N06S5N011ATMA1 be used in paralleled configurations?

Yes - its positive temperature coefficient for R_DS(on) (confirmed in Fig. 8 of the datasheet) ensures inherent current sharing across parallel devices. Successful implementation requires matched gate drive impedance, symmetrical PCB routing, and shared thermal interface to maintain ΔT_j < 5 °C between units.

IAUC120N06S5N011ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 310A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 1.12mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 137 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9822 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-53

IAUC120N06S5N011ATMA1 FAQ

1.How can I place an order for IAUC120N06S5N011ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUC120N06S5N011ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUC120N06S5N011ATMA1 reliable?

The price and inventory of IAUC120N06S5N011ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUC120N06S5N011ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUC120N06S5N011ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUC120N06S5N011ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUC120N06S5N011ATMA1?

IAUC120N06S5N011ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUC120N06S5N011ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUC120N06S5N011ATMA1?

For technical support, including IAUC120N06S5N011ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUC120N06S5N011ATMA1 requirements.

6.How does Aetrix verify that IAUC120N06S5N011ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUC120N06S5N011ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUC120N06S5N011ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUC120N06S5N011ATMA1?

All IAUC120N06S5N011ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUC120N06S5N011ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUC120N06S5N011ATMA1 part is unused and in its original packaging.

Return procedure for IAUC120N06S5N011ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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