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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUC120N06S5N015ATMA1

Name: IAUC120N06S5N015ATMA1
Brand: Infineon Technologies
SKU: IAUC120N06S5N015ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUC120N06S5N015ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUC120N06S5N015ATMA1.pdf

Description:: MOSFET_)40V 60V)

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Product details

Overview

IAUC120N06S5N015ATMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™-5 family, rated for 60 V V_DS, 1.50 mΩ R_DS(on) at V_GS = 10 V and I_D = 60 A, with 230 A chip-limited continuous drain current and 175 °C maximum junction temperature. It serves as a high-current, low-loss main switch in 12 V/48 V automotive power stages including starter-alternator inverters and DC-DC converters.

For engineers reviewing the IAUC120N06S5N015ATMA1 datasheet, IAUC120N06S5N015ATMA1 pinout, IAUC120N06S5N015ATMA1 application, or IAUC120N06S5N015ATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, MSL1 reflow rating, 100% avalanche testing, and thermal performance under high ambient conditions typical of engine bay and powertrain modules.

Technical Context

This device implements a trench-gate, superjunction-based silicon MOSFET architecture optimized for low R_DS(on) × Q_g figure-of-merit in automotive switching applications. Its gate threshold voltage (2.2–3.4 V) ensures robust noise immunity while enabling direct drive from standard 3.3 V or 5 V microcontrollers with appropriate gate drivers.

Thermal design is supported by a low 0.90 K/W junction-to-case thermal resistance and operation up to 175 °C, enabling use in space-constrained, high-power-density modules where conduction loss minimization and transient thermal stability are critical - especially during cranking, regenerative braking, and load-dump events.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports full 12 V automotive system operation with margin for load dump transients up to ISO 7637-2 Pulse 5a.
R_DS(on)	1.50 mΩ @ V_GS = 10 V, I_D = 60 A - enables <1.8 W conduction loss at 60 A, reducing heatsink requirements in high-current paths.
I_D (continuous)	230 A (chip-limited) - defines maximum steady-state current capability before thermal or electromigration limits are reached.
E_AS	757 mJ - quantifies single-pulse avalanche energy handling, supporting reliable operation during inductive switching faults without external snubbers.
T_j(max)	175 °C - allows sustained operation in under-hood environments exceeding 125 °C ambient, validated per AEC-Q101 stress test conditions.
R_thJC	0.90 K/W - enables efficient heat transfer to heatsink or PCB copper, critical for maintaining safe junction temperature in compact power modules.
Q_g	96 nC max - determines gate driver power requirement and switching speed trade-off in hard-switched topologies like synchronous buck or half-bridge inverters.

Pinout & Package

IAUC120N06S5N015ATMA1 is housed in PG-TDSON-8-43, a thermally enhanced 8-pin exposed-drain DSO package with 4.3 mm × 5.15 mm footprint and 1.27 mm pitch. The package features a large bottom-side thermal pad for direct thermal coupling to PCB copper or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Drain (internally connected)	High-current power output node; electrically and thermally tied to exposed copper pad for low-inductance, low-resistance path to ground plane.
4	Source	Reference node for gate drive and current sensing; connects to low-side shunt or controller ground return path.
8	Gate	Control input requiring ~96 nC total charge; sensitive to ESD and ringing - requires local RC snubber and layout-controlled trace inductance.

Key Features

Feature	Design Value
AEC-Q101 qualified beyond standard requirements	Extended reliability validation including HTGB, HTRB, and UHAST - ensures >15-year field life in safety-critical powertrain systems.
100% unclamped inductive switching (UIS) tested	Each unit verified for 757 mJ avalanche energy - eliminates need for external clamping diodes in motor control and solenoid drive circuits.
MSL1 rating (260 °C peak reflow)	Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns or baking requirements.
Optimized gate charge profile	Low Q_gd/Q_g ratio (≈0.22) reduces Miller-induced shoot-through risk and improves hard-switching efficiency in half-bridge configurations.
Robust body diode with low V_SD	0.8–1.1 V forward drop at 60 A enables efficient freewheeling in synchronous rectification and bidirectional DC-DC topologies.

Applications

Engine Start-Stop Inverter

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-efficiency bidirectional power conversion between 12 V battery and 48 V Li-ion storage during engine restart and regenerative braking.

IC Role / Device Role / Timing Role: Primary high-side and low-side switching element in interleaved synchronous buck-boost topology operating at 100–200 kHz.

Use Value: 1.50 mΩ R_DS(on) and 96 nC Q_g enable >96% peak efficiency at 10 kW, minimizing thermal derating in confined under-hood enclosures.

Use Scenario: Voltage regulation and power transfer in 48 V electrical architecture for active suspension, electric turbochargers, and ADAS ECUs.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier and primary switch in dual-phase LLC resonant converter.

Use Value: 175 °C T_j(max) and 0.90 K/W R_thJC sustain full 200 A output current across -40 °C to +125 °C ambient without forced air cooling.

Electric Power Steering (EPS) Motor Driver

Automotive On-Board Charger (OBC) Output Stage

Use Scenario: Three-phase inverter driving brushless DC motor in column-assist or rack-assist EPS systems with torque demand up to 15 N·m.

IC Role / Device Role / Timing Role: Phase-leg switch in 60 V-rated inverter stage, controlled via PWM with dead-time management.

Use Value: Avalanche ruggedness (757 mJ) prevents failure during motor phase short-circuits or rapid deceleration-induced back-EMF spikes.

Use Scenario: High-current DC output stage in bi-directional OBC converting AC grid power to 400 V battery and vice versa for vehicle-to-grid (V2G) functions.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in full-bridge configuration operating at 150 kHz with zero-voltage switching.

Use Value: Low Crss (56–84 pF) and fast turn-off delay (27 ns) support precise timing control and reduced switching losses in high-frequency soft-switching designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N06S5N015ATMA1	Same OptiMOS™-5 die, but in PG-TDSON-8-41 package with smaller thermal pad (3.3 × 3.3 mm); R_thJC = 1.25 K/W.	Suitable for lower-power (<8 kW) modules where board area is constrained but thermal margin remains acceptable.	Select when footprint reduction outweighs thermal performance; verify junction temperature rise under worst-case pulse loads.
STL220N6LF8AG	60 V, 220 A, 1.55 mΩ - comparable R_DS(on) but higher Q_g (115 nC) and lower avalanche rating (520 mJ).	Better suited for cost-sensitive non-safety-critical applications where gate drive strength exceeds 2 A peak and fault energy is limited.	Prefer for non-powertrain applications with relaxed avalanche and thermal requirements; avoid in starter-alternator or EPS inverters.

Compared with IAUZ40N06S5N015ATMA1, IAUC120N06S5N015ATMA1 delivers 27% lower R_thJC and 15% higher continuous current capability; versus STL220N6LF8AG, it offers 45% higher avalanche energy and tighter V_GS(th) distribution - critical for deterministic turn-on in safety-relevant control loops.

Availability

IAUC120N06S5N015ATMA1 is available at Aetrix Electronics and suitable for engine start-stop inverters, 48 V mild hybrid DC-DC converters, and electric power steering motor drivers requiring stable component supply across multi-year automotive production programs.

Supply support for IAUC120N06S5N015ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 48 V vehicle electrical systems - emphasizing low conduction loss, robust fault tolerance, and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IAUC120N06S5N015ATMA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range of 0 V to 10 V for standard enhancement-mode switching. Exceeding +10 V does not reduce R_DS(on) significantly but increases gate oxide stress and leakage; operation below 4.5 V risks incomplete turn-on and elevated conduction loss due to the 2.2–3.4 V V_GS(th) spread.

Does IAUC120N06S5N015ATMA1 require a negative gate voltage for turn-off in high-noise environments?

No - the device has no requirement for negative gate bias. Its V_GS(th) minimum of 2.2 V provides sufficient noise margin against typical automotive EMI. However, applying –5 V during turn-off can improve immunity to dv/dt-induced false turn-on in high-side configurations with fast-rising V_DS edges (>50 V/ns), though this is not mandatory per datasheet specifications.

How is the 230 A continuous drain current rating determined?

The 230 A rating is chip-limited and derived from silicon area and metallization design, not package thermal limits. It assumes ideal heatsinking (T_C = 25 °C) and represents the maximum DC current before electromigration or thermal runaway occurs at the die level. Real-world current capability is lower and governed by PCB layout, heatsink performance, and ambient temperature - typically 120–180 A in production modules.

Can IAUC120N06S5N015ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing with T_j) enables inherently stable current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling to ensure uniform junction temperature rise. Derating by 15% per additional device is recommended to account for parametric spread in V_GS(th) and R_DS(on).

IAUC120N06S5N015ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 1.5mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 94µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6952 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-43

IAUC120N06S5N015ATMA1 FAQ

1.How can I place an order for IAUC120N06S5N015ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUC120N06S5N015ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUC120N06S5N015ATMA1 reliable?

The price and inventory of IAUC120N06S5N015ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUC120N06S5N015ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUC120N06S5N015ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUC120N06S5N015ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUC120N06S5N015ATMA1?

IAUC120N06S5N015ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUC120N06S5N015ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUC120N06S5N015ATMA1?

For technical support, including IAUC120N06S5N015ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUC120N06S5N015ATMA1 requirements.

6.How does Aetrix verify that IAUC120N06S5N015ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUC120N06S5N015ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUC120N06S5N015ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUC120N06S5N015ATMA1?

All IAUC120N06S5N015ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUC120N06S5N015ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUC120N06S5N015ATMA1 part is unused and in its original packaging.

Return procedure for IAUC120N06S5N015ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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