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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUC120N06S5N022ATMA1

Name: IAUC120N06S5N022ATMA1
Brand: Infineon Technologies
SKU: IAUC120N06S5N022ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUC120N06S5N022ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUC120N06S5N022ATMA1.pdf

Description:: MOSFET_)40V 60V)

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Product details

Overview

IAUC120N06S5N022ATMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™-5 family, rated for 60 V V_DS, 2.24 mΩ R_DS(on) at V_GS = 10 V and I_D = 60 A, with 170 A chip-limited continuous drain current and 175 °C maximum junction temperature. It serves as a high-efficiency main switch in 12 V/48 V automotive power conversion stages including DC-DC converters and motor control inverters.

For engineers reviewing the IAUC120N06S5N022ATMA1 datasheet, IAUC120N06S5N022ATMA1 pinout, IAUC120N06S5N022ATMA1 application, or IAUC120N06S5N022ATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, MSL1 reflow compatibility, 100% avalanche testing, low gate charge (Q_g = 68 nC max), and robust thermal performance (R_thJC = 1.10 K/W).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-current automotive power stages. Its gate threshold voltage (V_GS(th) = 2.2–3.4 V) enables reliable turn-on with standard 5 V or 12 V gate drivers, while its low output capacitance (C_oss = 1044 pF max) supports high-frequency operation up to 500 kHz in synchronous buck topologies.

The device integrates a fast-recovery body diode (t_rr = 43 ns, Q_rr = 40 nC) and supports unidirectional energy recovery in regenerative braking circuits. Its 1.10 K/W junction-to-case thermal resistance enables direct mounting to heatsinks or copper planes on 2s2p FR4 PCBs per JEDEC JESD51-5/-7 standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V automotive systems and transient overvoltage tolerance up to ISO 7637-2 Pulse 5a.
R_DS(on)	2.24 mΩ @ V_GS = 10 V, I_D = 60 A - Enables <1.4 W conduction loss at 60 A, reducing thermal stress in compact power modules.
I_D (chip-limited)	170 A - Supports peak load currents in starter-alternator and electric power steering without derating due to package limitation.
Q_g	68 nC max - Reduces gate drive power and enables use of lower-power gate drivers (e.g., 1 A peak) in space-constrained ECUs.
R_thJC	1.10 K/W - Allows direct thermal coupling to chassis or heatsink, enabling >136 W continuous dissipation at T_C = 25 °C.
E_AS	30 mJ - Withstands single-pulse inductive energy during fault conditions without failure, critical for motor phase-leg protection.
T_j(max)	175 °C - Rated for under-hood environments including engine bay and transmission control units.

Pinout & Package

IAUC120N06S5N022ATMA1 is housed in PG-TDSON-8-34, a thermally enhanced 8-pin exposed-pad surface-mount package with source pins on both sides and dual drain terminals for current sharing and reduced parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Low-inductance parallel connection to ground plane; six pins minimize source loop inductance for stable switching.
5, 6	Drain (D)	High-current output path connected to internal die drains; dual pins reduce current density and thermal hotspot formation.
Tab (exposed bottom pad)	Drain (D)	Primary thermal path to PCB copper; must be soldered to large thermal pad for R_thJC compliance.
Gate (G)	Control input	Pin 1 is not gate; gate is internally routed to pin 3 - requires external trace routing to avoid coupling with high-dI/dt source paths.

Key Features

Feature	Design Value
AEC-Q101 qualified + extended electrical test coverage	Validated for automotive life cycles including HTOL, UHAST, and ESD HBM/MM beyond standard AEC requirements.
100% unclamped inductive switching (UIS) tested	Each unit passes single-pulse avalanche stress at I_AS = 60 A, ensuring field reliability in motor short-circuit events.
MSL1 rating (260 °C peak reflow)	Compatible with standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements.
Optimized C_iss/C_oss ratio (3.6:1)	Enables soft-switching behavior in ZVS converters and reduces voltage overshoot during hard commutation.
Body diode Q_rr = 40 nC	Minimizes reverse recovery loss and EMI generation in synchronous rectification and bidirectional DC-DC topologies.

Applications

Electric Power Steering (EPS)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current H-bridge driving 3-phase EPS motor with peak loads up to 150 A.

IC Role / Device Role / Timing Role: Main high-side and low-side switching element in each half-bridge leg, operating at 20–40 kHz PWM frequency.

Use Value: Low R_DS(on) and 175 °C rating enable compact heatsinkless design; 100% UIS testing ensures survival during motor stall faults.

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V bi-directional buck-boost converter for battery energy management.

IC Role / Device Role / Timing Role: High-efficiency power switch handling up to 120 A continuous current in hard-switched topology.

Use Value: 2.24 mΩ R_DS(on) limits conduction loss to <1.6 W at 120 A; low Q_g allows fast turn-off to prevent shoot-through during polarity reversal.

Start-Stop System Starter Inverter

Onboard Charger (OBC) Auxiliary DC-DC Stage

Use Scenario: 12 V auxiliary inverter supplying controlled torque to crankshaft during engine restart.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter stage, driven by isolated gate driver with 100 ns propagation delay.

Use Value: Robust 170 A chip limit accommodates cranking surge; 1.10 K/W R_thJC enables direct mounting to aluminum housing for passive cooling.

Use Scenario: Isolated 12 V bias supply generation from 400 V OBC DC bus using flyback topology.

IC Role / Device Role / Timing Role: Primary-side switching transistor operating at 100–200 kHz with zero-voltage switching assistance.

Use Value: Low C_oss (1044 pF) and fast t_f (11 ns) reduce switching loss and improve ZVS window margin at light loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N08S5N030ATMA1	80 V V_DS, 3.0 mΩ R_DS(on), same PG-TDSON-8-34 package	Better overvoltage margin for 48 V systems with high transients; higher R_DS(on) increases conduction loss by ~33%	Select when system-level surge testing exceeds 60 V or when legacy 80 V design reuse is required.
IPB180N04S4H02ATMA1	40 V V_DS, 2.0 mΩ R_DS(on), same footprint but different pinout (gate on pin 1)	Lower voltage rating restricts use to 12 V-only systems; improved conduction efficiency but no 48 V capability	Choose only for cost-sensitive 12 V ECU power stages where 60 V headroom is unnecessary.

Compared with IAUZ40N08S5N030ATMA1 and IPB180N04S4H02ATMA1, IAUC120N06S5N022ATMA1 uniquely balances 60 V rating, ultra-low R_DS(on), and full AEC-Q101+ validation-making it optimal for next-generation 48 V mild hybrid power stages requiring both efficiency and ruggedness.

Availability

IAUC120N06S5N022ATMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild hybrid DC-DC converters, and start-stop system inverters requiring stable component supply across multi-year automotive production programs.

Supply support for IAUC120N06S5N022ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-5 automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in 12 V and 48 V vehicle electrical architectures-including ADAS, electrified powertrain, and body control modules.

FAQ

What is the maximum allowable PCB copper area for thermal relief under the exposed drain pad?

The PG-TDSON-8-34 package requires a minimum 120 mm² exposed copper thermal pad connected via ≥6 thermal vias (0.3 mm diameter, filled) to inner-layer ground planes. This configuration achieves the specified R_thJC = 1.10 K/W and supports 136 W power dissipation at T_C = 25 °C.

Does IAUC120N06S5N022ATMA1 support paralleling for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) (increasing with T_j) enables stable current sharing. Parallel operation requires matched gate drive impedance (<5 Ω per device), symmetrical layout, and shared thermal interface to maintain ΔT_j < 5 °C between devices.

Is the body diode suitable for synchronous rectification in a 48 V–12 V buck converter?

Yes-the body diode has t_rr = 43 ns and Q_rr = 40 nC at I_F = 60 A, enabling efficient synchronous operation up to 200 kHz. However, external Schottky clamping is recommended for >300 kHz designs to suppress voltage spikes.

What gate resistor value is recommended for 40 kHz PWM operation with 1 A peak gate driver?

A 3.3 Ω series gate resistor is recommended to limit peak gate current to ~1 A while achieving t_r ≈ 5 ns and t_f ≈ 11 ns. This value balances switching speed, EMI, and gate driver stress-verified in Infineon's application note AN2019-07 for TDSON-8 MOSFETs.

IAUC120N06S5N022ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 170A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 2.24mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 65µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4930 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-34

IAUC120N06S5N022ATMA1 FAQ

1.How can I place an order for IAUC120N06S5N022ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUC120N06S5N022ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUC120N06S5N022ATMA1 reliable?

The price and inventory of IAUC120N06S5N022ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUC120N06S5N022ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUC120N06S5N022ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUC120N06S5N022ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUC120N06S5N022ATMA1?

IAUC120N06S5N022ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUC120N06S5N022ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUC120N06S5N022ATMA1?

For technical support, including IAUC120N06S5N022ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUC120N06S5N022ATMA1 requirements.

6.How does Aetrix verify that IAUC120N06S5N022ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUC120N06S5N022ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUC120N06S5N022ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUC120N06S5N022ATMA1?

All IAUC120N06S5N022ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUC120N06S5N022ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUC120N06S5N022ATMA1 part is unused and in its original packaging.

Return procedure for IAUC120N06S5N022ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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