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Infineon Technologies IAUCN04S7L005ATMA1
- Part No.:
- IAUCN04S7L005ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IAUCN04S7L005ATMA1.pdf
- Description:
- MOSFET_(20V 40V)
- Quantity:
- Payment:
- Shipping:
Inventory:7,891
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Product details
Overview
IAUCN04S7L005ATMA1 from Infineon is an N-channel logic-level automotive power MOSFET in PG-TDSON-8-43 package, rated for 40 V VDS, 0.52 mΩ RDS(on) at VGS = 10 V and 88 A, with 430 A chip-limited continuous drain current and 175 °C maximum junction temperature. It serves as a high-current synchronous rectifier or main switch in 12 V/48 V automotive power distribution systems including battery disconnect and starter motor control.
For engineers reviewing the IAUCN04S7L005ATMA1 datasheet, IAUCN04S7L005ATMA1 pinout, IAUCN04S7L005ATMA1 application, or IAUCN04S7L005ATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, MSL1 reflow compatibility, 100% avalanche testing, and low RDS(on) at 4.5 V gate drive for direct microcontroller interfacing in engine control units and ADAS power stages.
Technical Context
This OptiMOS™ 7 device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in automotive DC-DC converters and motor drives. Its gate threshold voltage (1.2–1.8 V) enables reliable turn-on with 3.3 V or 5 V logic controllers, while robust body diode performance (trr = 52–78 ns, Qrr = 54–107 nC) supports synchronous rectification without external Schottky diodes.
Thermal design is enabled by ultra-low RthJC of 0.42–0.84 K/W and operation up to 175 °C, supporting compact layouts on 2s2p FR4 PCBs per JEDEC JESD51-5/7. The device undergoes enhanced electrical screening beyond AEC-Q101, including extended HTGB and HTRB stress tests.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V/48 V automotive battery rail applications |
| RDS(on) @ 10 V | 0.52 mΩ - Enables <1 W conduction loss at 100 A, critical for high-efficiency power distribution |
| ID (chip-limited) | 430 A - Supports peak load currents in starter relays and high-power DC-DC stages |
| Tj max | 175 °C - Allows operation in under-hood environments without derating in most chassis locations |
| EAS | 179 mJ - Withstands single-pulse inductive energy from solenoid or motor coil switching |
| Qg | 109–141 nC - Determines gate driver sizing for <100 ns switching transitions at 100 kHz PWM |
| Ciss | 7242–9415 pF - Impacts high-frequency EMI behavior and gate drive loop stability |
| VGS(th) | 1.2–1.8 V - Ensures full enhancement with standard 3.3 V MCU GPIO, eliminating level-shifter need |
Pinout & Package
PG-TDSON-8-43 is a thermally enhanced 8-pin exposed-pad surface-mount package with dual-source/drain configurations for parallel current handling and low-inductance layout. Pin 1–4 and 5–8 are internally paralleled source terminals; pins 6 and 7 are drain connections; pin 3 is gate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5, 8 | Source (S) | Multiple low-inductance source paths reduce common-source inductance during hard switching |
| 6, 7 | Drain (D) | High-current drain terminals connected to thermal pad for optimal heat transfer to PCB |
| 3 | Gate (G) | Single gate input with 1.1 Ω typical gate resistance-supports direct MCU drive with minimal RC damping |
| Exposed Pad | Drain (D) | Primary thermal path to PCB copper; must be soldered to ≥4 cm² thermal pad for RthJA ≤ 26 K/W |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified + extended reliability test | Validated for 15-year automotive life with >2× margin on HTGB, HTRB, and temperature cycling |
| Logic-level gate drive (VGS(th) ≤ 1.8 V) | Enables direct interface with 3.3 V microcontrollers without gate driver ICs in ECU power stages |
| 100% unclamped inductive switching (UIS) tested | Guarantees single-pulse avalanche ruggedness up to 179 mJ-no derating required for solenoid loads |
| MSL1 rating (260 °C peak reflow) | Supports standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements |
| Optimized body diode (Qrr = 54–107 nC) | Reduces reverse recovery loss and EMI in synchronous buck converters operating above 100 kHz |
Applications
| Engine Control Unit (ECU) Power Switching | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side switching for fuel injector drivers and ignition coil pre-charge circuits in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Main power switch controlling 12 V loads with precise 1–10 ms pulse timing and fast turn-off to prevent coil saturation. Use Value: Low RDS(on) minimizes voltage drop during cranking (≤8 V battery), ensuring consistent injector actuation across cold-start conditions. | Use Scenario: Primary-side synchronous rectifier in bi-directional 48 V–12 V DC-DC converter for mild hybrid energy recovery. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 200–300 kHz with zero-voltage switching (ZVS) assist. Use Value: 0.52 mΩ RDS(on) reduces conduction loss by >40% vs. legacy OptiMOS™ 5, enabling >96% peak efficiency at 5 kW output. |
| ADAS Camera Power Distribution | Electric Power Steering (EPS) Motor Driver |
Use Scenario: Redundant power switch for dual-imager camera modules requiring fail-safe shutdown during fault detection. IC Role / Device Role / Timing Role: Protected high-side switch with integrated overcurrent and overtemperature monitoring via external sense resistor. Use Value: 175 °C Tj rating allows placement near image sensor ASICs without thermal throttling, maintaining 60 fps video capture. | Use Scenario: Half-bridge high-side switch in three-phase EPS motor inverter driving 300–500 W brushless motors. IC Role / Device Role / Timing Role: Fast-switching power stage with <100 ns dead-time control to prevent shoot-through during 10–20 kHz PWM. Use Value: Low Ciss/Coss ratio (≈2.0) ensures stable gate voltage during high dv/dt commutation, reducing gate oscillation risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IAUCN04S7L005ATMA2 | Same die, alternate tape-and-reel packaging (13-inch reel vs. 7-inch); identical electrical specs | No functional difference; selected based on SMT line feeder compatibility | Choose ATMA2 for high-volume automated assembly requiring larger reels and tighter pitch control |
| IPB180N04S7L-02 | Higher RDS(on) (0.72 mΩ), same VDS/Tj, different PG-HSOF-8 package with non-exposed drain | Limited to lower-current (<300 A) applications due to higher thermal resistance (RthJC = 1.1 K/W) | Select only when board space constraints prohibit TDSON-8-43 footprint or when legacy HSOF-8 tooling is fixed |
Compared with IAUCN04S7L005ATMA1, the ATMA2 variant offers identical performance in a different reel format, while IPB180N04S7L-02 trades 38% higher conduction loss for mechanical compatibility with older HSOF-8 footprints-neither provides superior thermal or switching performance.
Availability
IAUCN04S7L005ATMA1 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid DC-DC converters, and electric power steering motor drivers requiring stable component supply across multi-year automotive production programs.
Supply support for IAUCN04S7L005ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
This part belongs to the OptiMOS™ 7 automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in next-generation 12 V/48 V vehicle architectures with emphasis on AEC-Q101 robustness and system-level efficiency.
FAQ
What is the maximum allowable PCB copper area for the exposed thermal pad?
The exposed drain pad requires minimum 4 cm² of 2-oz copper connected via ≥12 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner-layer ground planes. This achieves RthJA ≤ 26 K/W per JEDEC JESD51-7 on vertical FR4; smaller pads increase junction temperature by ≥15 °C at 200 A continuous.
Does IAUCN04S7L005ATMA1 support paralleling for higher current capacity?
Yes-its matched VGS(th) tolerance (±0.3 V) and low RDS(on) temperature coefficient (−0.4 mΩ/°C) enable stable current sharing across up to four devices without external ballast resistors. Layout symmetry and equal gate trace lengths are mandatory to avoid dynamic imbalance.
Can this MOSFET replace older OptiMOS™ 5 devices in existing designs?
Direct replacement is possible in most cases due to identical PG-TDSON-8-43 footprint and improved RDS(on) (−28% vs. IPA50R199CP), but gate charge increases by ~15%, requiring verification of existing gate driver slew rate and peak current capability to maintain <100 ns switching times.
Is the body diode suitable for freewheeling in synchronous rectification?
Yes-the body diode is fully characterized with trr = 52–78 ns and Qrr = 54–107 nC at IF = 50 A, enabling efficient synchronous rectification in buck converters up to 300 kHz. No external Schottky diode is needed if gate timing accounts for reverse recovery delay.
IAUCN04S7L005ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 7
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 430A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.52mOhm @ 88A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs:
- 141 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9415 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 179W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8-43
IAUCN04S7L005ATMA1 FAQ
1.How can I place an order for IAUCN04S7L005ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IAUCN04S7L005ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IAUCN04S7L005ATMA1 reliable?
The price and inventory of IAUCN04S7L005ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUCN04S7L005ATMA1 is usually 5 days.
3.What payment methods are accepted for IAUCN04S7L005ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUCN04S7L005ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IAUCN04S7L005ATMA1?
IAUCN04S7L005ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IAUCN04S7L005ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IAUCN04S7L005ATMA1?
For technical support, including IAUCN04S7L005ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUCN04S7L005ATMA1 requirements.
6.How does Aetrix verify that IAUCN04S7L005ATMA1 is sourced from the original manufacturer or authorized distributors?
All IAUCN04S7L005ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUCN04S7L005ATMA1 meets industry standards.
7.What is the process for return or replacement of IAUCN04S7L005ATMA1?
All IAUCN04S7L005ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUCN04S7L005ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IAUCN04S7L005ATMA1 part is unused and in its original packaging.
Return procedure for IAUCN04S7L005ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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