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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUCN04S7L028ATMA1

Name: IAUCN04S7L028ATMA1
Brand: Infineon Technologies
SKU: IAUCN04S7L028ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUCN04S7L028ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUCN04S7L028ATMA1.pdf

Description:: MOSFET_(20V 40V)

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IAUCN04S7L028ATMA1 from Infineon is an automotive-grade N-channel enhancement-mode logic-level power MOSFET in PG-TDSON-8-33 package, rated for 40 V V_DS, 2.82 mΩ R_DS(on) at V_GS = 10 V / I_D = 50 A, and 100 A continuous drain current (chip-limited), designed for high-efficiency 12 V/24 V automotive power switching in engine control units and body electronics.

For engineers reviewing the IAUCN04S7L028ATMA1 datasheet, IAUCN04S7L028ATMA1 pinout, IAUCN04S7L028ATMA1 application, or IAUCN04S7L028ATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C operating temperature, MSL1 reflow rating, 100% avalanche testing, and low gate charge (Q_g = 18–24 nC) for fast switching in high-frequency DC-DC converters and motor drivers.

Technical Context

This OptiMOS™ 7 device uses trench-based silicon technology optimized for low conduction and switching losses in automotive 12 V systems. Its logic-level gate drive (V_GS(th) = 1.2–1.8 V) enables direct interfacing with microcontroller GPIOs without level-shifting, while robust avalanche capability (E_AS = 22 mJ) supports inductive load handling in solenoid and relay drivers.

The MOSFET features a thermally enhanced PG-TDSON-8-33 package with exposed drain pad for low R_thJC (1.3–2.6 K/W), enabling high-power density designs. Its dynamic parameters-including C_iss = 1214–1578 pF, Q_gd = 3.3–5 nC, and t_r/t_f < 1 ns-support efficient operation in synchronous rectification and BLDC motor gate driving up to 200 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail applications with transient margin.
R_DS(on)	2.82 mΩ @ V_GS = 10 V, I_D = 50 A - Enables <1.4 W conduction loss at 50 A, critical for thermal management in compact ECUs.
I_D (continuous)	100 A (chip-limited) - Supports high-current loads such as fuel injectors, HVAC blowers, and starter relays without external heatsinking.
Q_g	18–24 nC - Reduces gate drive power and switching transition time, improving efficiency in 100–200 kHz PWM circuits.
T_j max	+175 °C - Allows operation in under-hood environments (e.g., near engines or exhaust manifolds) without derating.
E_AS	22 mJ - Withstands single-pulse inductive energy from solenoids and motors without failure, eliminating need for external snubbers.
Package	PG-TDSON-8-33 - Thermally optimized 8-pin exposed-drain package with 2.6 K/W max R_thJC, compatible with standard SMT reflow (MSL1, 260 °C).

Pinout & Package

PG-TDSON-8-33 is a surface-mount, thermally enhanced package with exposed drain pad on bottom side and 8 leads arranged in two rows (4+4). Pin 1 is marked by notch or dot; pins 1–4 are source terminals, pins 5–8 are drain terminals (shared via internal copper clip), and gate is on pin 3.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6, 7, 8	Drain (D)	Internally paralleled high-current path connected to exposed thermal pad; carries full load current and dissipates heat directly to PCB.
3	Gate (G)	Control input requiring ≤10 V logic-level drive; low input capacitance (C_iss ≈ 1.4 nF) minimizes driver stress.
5	Source (S)	Reference node for gate drive and current sensing; low-inductance connection critical for stable high-speed switching.

Key Features

Feature	Design Value
AEC-Q101 qualified + extended electrical testing	Validated beyond standard automotive reliability requirements, including HTGB, HTRB, and UHAST, ensuring long-term stability in harsh environments.
Logic-level gate threshold (1.2–1.8 V)	Enables direct drive from 3.3 V or 5 V MCUs without gate driver ICs, reducing BOM count and layout complexity.
100% unclamped inductive switching (UIS) tested	Guarantees robustness against voltage spikes during turn-off of inductive loads like fuel pumps and cooling fans.
Low Q_gd/Q_g ratio (≈0.2)	Minimizes Miller-induced shoot-through risk and improves hard-switching efficiency in half-bridge configurations.
RoHS-compliant & halogen-free	Meets automotive environmental compliance standards (ELV, REACH) and supports lead-free manufacturing processes.

Applications

Engine Control Unit (ECU)

Body Control Module (BCM)

Use Scenario: Switching 12 V solenoid valves and ignition coils in gasoline/diesel engine management systems.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling pulsed current up to 100 A with precise timing (<1 µs rise/fall).

Use Value: Low R_DS(on) and high avalanche energy eliminate need for external freewheeling diodes and reduce thermal footprint in space-constrained ECU housings.

Use Scenario: Driving LED headlamps, interior lighting, and window lift motors in centralized body electronics.

IC Role / Device Role / Timing Role: Load switch with PWM dimming capability and overcurrent protection via integrated sense FET architecture.

Use Value: Logic-level gate enables direct MCU control; 175 °C rating ensures reliability behind dashboards exposed to solar loading.

Electric Power Steering (EPS)

Start-Stop System

Use Scenario: Controlling brushless DC motor phases in assist torque generation circuits.

IC Role / Device Role / Timing Role: Half-bridge low-side switch operating at 20–100 kHz with fast switching (t_r = 0.4 ns) and low Q_gd.

Use Value: Low gate charge and optimized Crss reduce switching losses by >15% vs. prior-gen MOSFETs, extending battery life per assist cycle.

Use Scenario: Managing battery-to-load connection during engine cranking and restart events.

IC Role / Device Role / Timing Role: High-current reverse-polarity and overvoltage protected power distribution switch.

Use Value: 40 V rating accommodates load dump transients up to 40 V; 100 A rating handles peak cranking currents without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUCN04S7L035ATMA1	R_DS(on) = 3.5 mΩ @ 10 V - higher conduction loss; same package and voltage rating.	Suitable where thermal margin allows slightly higher I²R loss, e.g., lower-duty-cycle BCM loads.	Select when cost sensitivity outweighs 0.7 mΩ R_DS(on) improvement and board layout permits identical footprint.
IPB180N04S4-02	Same V_DS (40 V), but R_DS(on) = 2.0 mΩ and larger TO-263-7 package - lower loss, higher thermal mass.	Better for sustained 100 A loads in EPS or inverters where PCB area allows larger outline.	Choose when system-level thermal design requires lower R_thJA and higher pulse current capability (I_D,pulse = 320 A).

Compared with IAUCN04S7L028ATMA1, the 035 variant trades 0.7 mΩ for potential cost reduction in thermally relaxed applications, while IPB180N04S4-02 delivers superior conduction performance in a less space-efficient package-making IAUCN04S7L028ATMA1 optimal for high-density, logic-driven automotive modules.

Availability

IAUCN04S7L028ATMA1 is available at Aetrix Electronics and suitable for engine control units, body control modules, electric power steering systems, and start-stop battery management requiring stable component supply across automotive production lifecycles.

Supply support for IAUCN04S7L028ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication infrastructure.

This part belongs to the OptiMOS™ 7 product line, engineered specifically for next-generation automotive power conversion-emphasizing low R_DS(on), fast switching, and AEC-Q101 reliability in 12 V/48 V hybrid architectures.

FAQ

What is the maximum allowable gate-source voltage for IAUCN04S7L028ATMA1?

The absolute maximum V_GS is ±16 V, with recommended operating range of 0–10 V for logic-level drive. Exceeding ±16 V risks permanent gate oxide damage. The gate threshold voltage is specified at 1.2–1.8 V, and gate leakage remains below 100 nA at 16 V per datasheet Rev. 1.0.

Does IAUCN04S7L028ATMA1 require a gate resistor in typical automotive applications?

Yes-a series gate resistor (typically 2.2–10 Ω) is required to dampen ringing, control dV/dt, and limit peak gate current during fast switching. The device's low gate resistance (R_G = 1.3 Ω typ.) and Q_g = 24 nC make it sensitive to parasitic oscillation without proper gate network design.

How does the PG-TDSON-8-33 package compare thermally to DSO-8 or TO-252?

PG-TDSON-8-33 achieves R_thJC = 1.3–2.6 K/W, significantly lower than DSO-8 (~4.5 K/W) and TO-252 (~5.0 K/W), due to its copper-clip construction and large exposed drain pad. This enables ~2× higher power density and eliminates need for external heatsinks in 60–80 W dissipation scenarios.

Is IAUCN04S7L028ATMA1 suitable for synchronous rectification in 48 V automotive DC-DC converters?

No-it is rated for 40 V V_DS, making it unsuitable for nominal 48 V bus applications where load dump transients exceed 60 V. For 48 V systems, Infineon's OptiMOS™ 7 60 V or 75 V variants (e.g., IAUCN06S7L035) are specified and qualified.

IAUCN04S7L028ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 7

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 175°C

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-33

IAUCN04S7L028ATMA1 FAQ

1.How can I place an order for IAUCN04S7L028ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUCN04S7L028ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUCN04S7L028ATMA1 reliable?

The price and inventory of IAUCN04S7L028ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUCN04S7L028ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUCN04S7L028ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUCN04S7L028ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUCN04S7L028ATMA1?

IAUCN04S7L028ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUCN04S7L028ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUCN04S7L028ATMA1?

For technical support, including IAUCN04S7L028ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUCN04S7L028ATMA1 requirements.

6.How does Aetrix verify that IAUCN04S7L028ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUCN04S7L028ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUCN04S7L028ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUCN04S7L028ATMA1?

All IAUCN04S7L028ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUCN04S7L028ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUCN04S7L028ATMA1 part is unused and in its original packaging.

Return procedure for IAUCN04S7L028ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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