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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUCN04S7N012ATMA1

Name: IAUCN04S7N012ATMA1
Brand: Infineon Technologies
SKU: IAUCN04S7N012ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUCN04S7N012ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IAUCN04S7N012ATMA1.pdf

Description:: MOSFET_(20V 40V)

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IAUCN04S7N012ATMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™ 7 family, rated for 40 V V_DS, 1.20 mΩ R_DS(on) at V_GS = 10 V / I_D = 60 A, and 214 A chip-limited continuous drain current. It operates up to 175 °C junction temperature, qualified per AEC-Q101, and features 100% single-pulse avalanche testing for robustness in high-reliability vehicle subsystems such as 12 V battery-switching and motor control.

For engineers reviewing the IAUCN04S7N012ATMA1 datasheet, IAUCN04S7N012ATMA1 pinout, IAUCN04S7N012ATMA1 application, or IAUCN04S7N012ATMA1 equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, MSL1 reflow compatibility, integrated body diode performance (t_rr = 33–50 ns), and thermal resistance R_thJC = 0.7–1.4 K/W for high-power-density automotive PCB layouts.

Technical Context

This device implements a trench-based silicon MOSFET structure optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate threshold voltage (2.2–3.0 V) enables reliable turn-on with standard 5 V or 10 V microcontroller outputs, while the 4.2 V gate plateau voltage supports stable Miller region control during hard-switching.

The integrated body diode exhibits low forward voltage (0.8–0.95 V at 60 A, 25 °C) and tightly controlled reverse recovery (Q_rr = 19–38 nC), reducing commutation losses in synchronous rectification and H-bridge motor drives where bidirectional current capability is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V battery rail applications with transient overvoltage margin
R_DS(on)	1.20 mΩ @ V_GS = 10 V, I_D = 60 A - Enables <1 W conduction loss at 100 A system-level current with parallel layout
I_D (chip-limited)	214 A - Peak current capability defined by silicon die thermal limit, not package
T_j max	175 °C - Supports operation in under-hood environments without derating below ambient +150 °C
R_thJC	0.7–1.4 K/W - Enables direct heatsink mounting on PCB copper pour or metal-core substrate for thermal management
E_AS	105 mJ - Single-pulse avalanche energy rating verified across production lot, critical for inductive load switching
t_rr	33–50 ns - Fast body diode recovery reduces cross-conduction risk in half-bridge configurations

Pinout & Package

IAUCN04S7N012ATMA1 is housed in PG-TDSON-8-34, a thermally enhanced 8-pin exposed-drain DSO package with 3.4 mm × 3.4 mm footprint and 0.65 mm pitch. The top-side exposed drain pad provides low-inductance, high-current path and primary thermal conduction path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally connected to exposed thermal pad - must be soldered to large PCB copper area for thermal and current handling
5	Source (S)	Low-side reference node for gate drive and current sensing; connects to ground plane
6	Gate (G)	High-impedance MOSFET control input; requires external gate resistor to damp ringing and control dV/dt

Key Features

Feature	Design Value
AEC-Q101 qualification beyond standard requirements	Extended electrical testing and lifetime validation for automotive safety-critical modules
MSL1 rating up to 260 °C peak reflow	Compatible with standard lead-free SMT assembly without moisture sensitivity concerns
100% single-pulse avalanche tested	Guaranteed ruggedness against inductive kickback in motor and solenoid drivers
Optimized gate charge profile	Q_g = 42–55 nC with Q_gd/Q_g ratio ~23%, enabling efficient hard-switching at >100 kHz

Applications

Electric Power Steering (EPS)

Automotive HVAC Blower Control

Use Scenario: High-efficiency three-phase inverter driving brushless DC motor in steering column assembly.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack inverter topology; handles 150 A peak phase current with minimal conduction loss.

Use Value: 1.20 mΩ R_DS(on) reduces I²R heating at full torque, enabling smaller heatsink and meeting ASIL-B thermal safety targets.

Use Scenario: PWM-controlled DC motor driver for cabin air blower fan in climate control unit.

IC Role / Device Role / Timing Role: High-current half-bridge low-side switch; operates at 20–25 kHz PWM frequency with fast body diode recovery.

Use Value: 33–50 ns t_rr minimizes shoot-through risk and improves efficiency over legacy MOSFETs by >2.5% at 80% duty cycle.

12 V Battery Disconnect Switch

Start-Stop System Solenoid Driver

Use Scenario: Solid-state replacement for mechanical relay in battery management system main contactor.

IC Role / Device Role / Timing Role: Single-pole, high-current switch controlling 200 A load between starter battery and vehicle loads.

Use Value: 105 mJ E_AS rating ensures safe interruption of inductive loads during emergency disconnect events.

Use Scenario: High-reliability solenoid actuation driver for engine start-stop engagement mechanism.

IC Role / Device Role / Timing Role: Low-side switch delivering 120 A pulsed current to starter solenoid coil with precise timing control.

Use Value: 175 °C T_j max allows uninterrupted operation during repeated cranking cycles in hot ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N04S5L027ATMA1	R_DS(on) = 2.7 mΩ @ 10 V - higher conduction loss; lower Q_g (27 nC)	Better suited for higher-frequency (>500 kHz) switching where gate drive loss dominates	Select when gate drive power budget is tighter than conduction loss budget
IPB180N04S4H5ATMA1	R_DS(on) = 0.45 mΩ @ 10 V - significantly lower on-resistance; larger PG-HSOF-8 package	Requires more PCB area and different thermal interface design due to larger footprint	Select when maximum current density and lowest possible conduction loss are mandatory

Compared with IAUZ40N04S5L027ATMA1, IAUCN04S7N012ATMA1 delivers 55% lower R_DS(on) at cost of 90% higher Q_g; versus IPB180N04S4H5ATMA1, it trades 62% higher R_DS(on) for 30% smaller footprint and identical MSL1 reflow compatibility.

Availability

IAUCN04S7N012ATMA1 is available at Aetrix Electronics and suitable for electric power steering, HVAC blower control, and 12 V battery disconnect applications requiring stable component supply, long-term automotive lifecycle support, and AEC-Q101-compliant traceability.

Supply support for IAUCN04S7N012ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949.

This part belongs to the OptiMOS™ 7 automotive power MOSFET product line, engineered specifically for high-current, high-temperature 12 V vehicle subsystems where low R_DS(on), avalanche ruggedness, and AEC-Q101 reliability are non-negotiable.

FAQ

What is the maximum allowable gate-source voltage for IAUCN04S7N012ATMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum ratings" table. Operation above +20 V risks permanent gate oxide damage, while negative voltage beyond –20 V may cause parasitic turn-on or junction breakdown. Recommended gate drive is 10 V for full enhancement with margin, and minimum 4.2 V to ensure reliable turn-on across temperature and process variation.

Does IAUCN04S7N012ATMA1 require a gate resistor, and what value is recommended?

Yes - a series gate resistor is mandatory to control dV/dt, suppress oscillation, and limit peak gate current. For typical 12 V automotive motor drive applications, a 5–10 Ω resistor is recommended when driven by a 1–2 A gate driver. Lower values (≤3 Ω) increase switching speed but raise EMI risk; higher values (>15 Ω) reduce EMI but increase switching losses proportionally to Q_g.

Can IAUCN04S7N012ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in datasheet Fig. 8) enables stable current sharing across paralleled devices. Successful implementation requires matched gate drive loop inductance, symmetrical PCB layout, shared source Kelvin connection, and thermal coupling via common heatsink or copper pour to maintain uniform junction temperature across all units.

Is the body diode in IAUCN04S7N012ATMA1 suitable for synchronous rectification?

Yes - the body diode is characterized for reverse recovery (t_rr = 33–50 ns, Q_rr = 19–38 nC) and forward conduction (V_SD = 0.8–0.95 V at 60 A), making it viable for synchronous rectification in buck converters or half-bridge topologies operating below 200 kHz. However, dedicated Schottky or GaN co-packaged solutions offer lower V_F and zero Q_rr for higher-frequency designs.

IAUCN04S7N012ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 7

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 175°C

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-34

IAUCN04S7N012ATMA1 FAQ

1.How can I place an order for IAUCN04S7N012ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUCN04S7N012ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUCN04S7N012ATMA1 reliable?

The price and inventory of IAUCN04S7N012ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUCN04S7N012ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUCN04S7N012ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUCN04S7N012ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUCN04S7N012ATMA1?

IAUCN04S7N012ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUCN04S7N012ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUCN04S7N012ATMA1?

For technical support, including IAUCN04S7N012ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUCN04S7N012ATMA1 requirements.

6.How does Aetrix verify that IAUCN04S7N012ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUCN04S7N012ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUCN04S7N012ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUCN04S7N012ATMA1?

All IAUCN04S7N012ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUCN04S7N012ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUCN04S7N012ATMA1 part is unused and in its original packaging.

Return procedure for IAUCN04S7N012ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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