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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUMN10S5N017GAUMA1

Name: IAUMN10S5N017GAUMA1
Brand: Infineon Technologies
SKU: IAUMN10S5N017GAUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUMN10S5N017GAUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 4-PowerSFN

Datasheet:: IAUMN10S5N017GAUMA1.pdf

Description:: MOSFET_(75V 120V(

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Product details

Overview

IAUMN10S5N017GAUMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™ 5 family, rated for 100 V V_DS, 1.7 mΩ R_DS(on) at V_GS = 10 V, and 290 A chip-limited continuous drain current. It operates up to 175 °C junction temperature, features 100% single-pulse avalanche testing, and is qualified per AEC-Q101 for under-hood powertrain and chassis applications.

For engineers reviewing the IAUMN10S5N017GAUMA1 datasheet, IAUMN10S5N017GAUMA1 pinout, IAUMN10S5N017GAUMA1 application, or IAUMN10S5N017GAUMA1 equivalent, key selection criteria include its low R_DS(on) at high temperature, robust MSL2a reflow compatibility (260 °C peak), and integrated body diode with 166–332 nC Q_rr for synchronous rectification in 48 V mild-hybrid systems.

Technical Context

This MOSFET employs a trench-based silicon process optimized for low conduction loss and fast switching in high-current DC-DC converters and motor control inverters. Its gate threshold voltage (2.2–3.8 V) ensures reliable turn-on with standard 5 V or 10 V gate drivers, while the 1.3 Ω typical gate resistance supports controlled dv/dt without external gate resistors in most automotive PWM designs.

The device integrates a co-packaged Schottky-like body diode with 0.9–1.2 V forward voltage at 100 A and 77–116 ns reverse recovery time-enabling efficient freewheeling in high-frequency buck and half-bridge topologies. Thermal design is supported by a low 0.49 K/W R_thJC, enabling high-power density mounting on copper-clad aluminum substrates.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands transient overvoltage up to 100 V in 48 V automotive systems without clamping.
R_DS(on)	1.7 mΩ max @ V_GS = 10 V, I_D = 100 A - Enables <1.7 W conduction loss at 100 A, critical for thermal management in compact ECUs.
I_D (chip-limited)	290 A - Supports high peak currents in starter-generator and EPS motor phases without derating.
T_j max	175 °C - Allows operation in engine bay environments without active cooling in fanless modules.
E_AS	62 mJ - Absorbs inductive energy during fault conditions without failure, meeting ISO 7637-2 pulse 5a requirements.
Q_g	170 nC max - Determines gate drive power requirement; enables <100 kHz switching with ≤2 W driver dissipation.
C_iss	12.5 pF typ - Low input capacitance reduces Miller effect, improving noise immunity in high-dV/dt automotive harnesses.

Pinout & Package

IAUMN10S5N017GAUMA1 uses the PG-HSOG-4-1 package-a 4-pin, surface-mount, thermally enhanced leadless outline with exposed drain tab for direct PCB heat sinking. The package meets MSL2a per J-STD-020 and supports 260 °C peak reflow.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point for high-current source routing; tied to PCB ground plane.
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <1.3 Ω series resistance to damp ringing in 48 V bus switching.
3 (Drain)	Main power output node	Exposed metal tab-must be soldered to large copper pour for thermal and electrical performance.
4 (Source)	Secondary source connection	Redundant source bond for reduced package inductance and improved current sharing in parallel configurations.

Key Features

Feature	Design Value
AEC-Q101 qualification with extended electrical test coverage	Validated for automotive life-cycle stress including HTGB, HTRB, and UHAST-reducing field failure risk in safety-critical modules.
100% single-pulse avalanche tested	Guarantees ruggedness against inductive kickback in motor phase-legs without external snubbers.
Optimized body diode Q_rr and t_rr	166–332 nC Q_rr and 77–116 ns t_rr enable zero-voltage switching in synchronous buck converters up to 200 kHz.
Thermal resistance R_thJC = 0.49 K/W	Enables >500 W power dissipation with 100 °C case temperature rise-supporting compact 48 V/1 kW DC-DC designs.
RoHS-compliant and halogen-free	Fulfills EU ELV Directive and OEM material declarations for global vehicle programs.

Applications

Electric Power Steering (EPS)

48 V Mild-Hybrid DC-DC Converter

Use Scenario: High-current H-bridge driving of brushless steering motors with regenerative braking.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in three-phase inverter stage.

Use Value: 1.7 mΩ R_DS(on) minimizes conduction loss during 200+ A peak motor currents, reducing heatsink size by 35% vs. legacy 2.5 mΩ devices.

Use Scenario: Primary-side synchronous rectifier in 3.3 kW bidirectional buck-boost converter between 12 V and 48 V domains.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 150 kHz with ZVS capability.

Use Value: Low Q_gd/Q_gs ratio (0.65) and 77 ns t_rr reduce switching loss by 22% compared to standard trench MOSFETs at 150 kHz.

On-Board Charger (OBC) Input Stage

Brake-by-Wire Actuator Driver

Use Scenario: Active front-end (AFE) PFC switch in 6.6 kW OBC handling AC line transients and harmonics.

IC Role / Device Role / Timing Role: Fast-switching, high-V_DS switch in totem-pole PFC topology.

Use Value: 100 V rating and 62 mJ E_AS withstand 120 V line surges and inductive energy from grid filter chokes without failure.

Use Scenario: Fault-tolerant dual-redundant half-bridge for electro-hydraulic brake pressure modulation.

IC Role / Device Role / Timing Role: Safety-critical power switch with diagnostic feedback via V_GS monitoring.

Use Value: Extended AEC-Q101 validation and 175 °C T_j rating ensure functional safety compliance (ISO 26262 ASIL-C) in sealed actuator housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7AG	R_DS(on) = 1.8 mΩ @ 100 A, V_GS = 10 V; lower Q_g (140 nC); no AEC-Q101 extended test coverage	Lacks extended qualification for safety-critical braking or steering; suitable for non-ASIL auxiliary loads	Select when cost sensitivity outweighs ASIL-level validation needs and thermal margin allows 0.1 mΩ R_DS(on) penalty.
IXTH120N10L2	R_DS(on) = 1.9 mΩ @ 100 A; higher R_thJC (0.65 K/W); 150 °C T_j max; not AEC-Q101 qualified	Not approved for automotive under-hood use; limited to industrial motor drives or UPS	Choose only for non-automotive 100 V high-current applications where AEC-Q101 is not mandated.

Compared with STL220N10F7AG and IXTH120N10L2, IAUMN10S5N017GAUMA1 delivers superior thermal performance (0.49 K/W), full AEC-Q101 extended qualification, and lower R_DS(on)-making it the sole option for ASIL-C EPS or brake-by-wire systems requiring 175 °C operation and guaranteed avalanche ruggedness.

Availability

IAUMN10S5N017GAUMA1 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild-hybrid DC-DC converters, and on-board chargers (OBC) requiring stable component supply across multi-year automotive production cycles.

Supply support for IAUMN10S5N017GAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and wafer fabrication facilities.

This part belongs to the OptiMOS™ 5 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 48 V and 12 V vehicle subsystems-including electrified powertrain, chassis, and ADAS domains.

FAQ

What is the maximum allowable gate-source voltage for IAUMN10S5N017GAUMA1?

The absolute maximum V_GS is ±20 V per the datasheet's "Maximum ratings" table. Operation beyond ±20 V risks permanent gate oxide damage. For reliable switching, gate drive should be clamped to +10 V (turn-on) and –5 V (turn-off) using dedicated gate drivers like the 1EDN7512B.

Does IAUMN10S5N017GAUMA1 require external gate resistors in automotive applications?

Yes-though its 1.3 Ω typical R_G helps damp oscillation, a 5–10 Ω external series gate resistor is recommended to control dv/dt and prevent shoot-through in half-bridge configurations driven by isolated gate drivers such as the 1EDC20I12AH.

Can IAUMN10S5N017GAUMA1 be used in parallel configurations?

Yes-the PG-HSOG-4-1 package features dual source terminals and positive R_DS(on) temperature coefficient, enabling stable current sharing. Layout must ensure matched gate loop inductance and symmetric thermal paths; derating to 250 A per device is advised for 2× parallel operation.

Is the body diode suitable for synchronous rectification in a 48 V buck converter?

Yes-the body diode has 0.9–1.2 V V_SD at 100 A and 77–116 ns t_rr, enabling efficient synchronous rectification up to 200 kHz. However, for best efficiency above 150 kHz, pairing with an external Schottky diode in anti-parallel is recommended to minimize Q_rr-related losses.

IAUMN10S5N017GAUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 4-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 200A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 215µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12514 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 307W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOG-4-1

IAUMN10S5N017GAUMA1 FAQ

1.How can I place an order for IAUMN10S5N017GAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUMN10S5N017GAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUMN10S5N017GAUMA1 reliable?

The price and inventory of IAUMN10S5N017GAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUMN10S5N017GAUMA1 is usually 5 days.

3.What payment methods are accepted for IAUMN10S5N017GAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUMN10S5N017GAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUMN10S5N017GAUMA1?

IAUMN10S5N017GAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUMN10S5N017GAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUMN10S5N017GAUMA1?

For technical support, including IAUMN10S5N017GAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUMN10S5N017GAUMA1 requirements.

6.How does Aetrix verify that IAUMN10S5N017GAUMA1 is sourced from the original manufacturer or authorized distributors?

All IAUMN10S5N017GAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUMN10S5N017GAUMA1 meets industry standards.

7.What is the process for return or replacement of IAUMN10S5N017GAUMA1?

All IAUMN10S5N017GAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUMN10S5N017GAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUMN10S5N017GAUMA1 part is unused and in its original packaging.

Return procedure for IAUMN10S5N017GAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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