My Inquiry
My Account
Infineon Technologies IAUS300N08S5N014ATMA1
- Part No.:
- IAUS300N08S5N014ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Gull Wing
- Datasheet:
-
IAUS300N08S5N014ATMA1.pdf
- Description:
- MOSFET N-CH 80V 300A HSOG-8
- Quantity:
- Payment:
- Shipping:
Inventory:1,800
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IAUS300N08S5N014ATMA1 from Infineon Technologies is an 80 V, 300 A, 1.4 mΩ OptiMOS™-5 N-channel power MOSFET in PG-HSOG-8-1 package, designed for high-current synchronous rectification and motor drive half-bridge legs. It delivers 300 W power dissipation at TC = 25 °C, supports 1200 A pulsed drain current, and features integrated avalanche-rated body diode with 600 mJ single-pulse energy rating.
For engineers reviewing the IAUS300N08S5N014ATMA1 datasheet, IAUS300N08S5N014ATMA1 pinout, IAUS300N08S5N014ATMA1 application, or IAUS300N08S5N014ATMA1 equivalent, key selection criteria include RDS(on) ≤ 1.4 mΩ at VGS = 10 V / ID = 100 A, thermal resistance RthJC = 0.5 K/W, and gate charge Qg = 144–187 nC for high-frequency switching in automotive traction inverters and industrial UPS systems.
Technical Context
This device employs trench-based silicon MOSFET technology optimized for low conduction and switching losses in hard-switched topologies. Its 1.4 mΩ RDS(on) enables <1.2 V forward drop at 300 A DC, while Qgd/Qgs ratio of ~0.65 supports robust dv/dt immunity in high-side configurations.
Thermal design is enabled by a dedicated source-tab thermal path (RthJC = 0.5 K/W) and operation up to Tj = +175 °C. The integrated body diode exhibits trr = 83 ns and Qrr = 156 nC at IF = 50 A, supporting ZVS-assisted soft switching in resonant converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage for 48 V–60 V bus applications with 20 % safety margin |
| RDS(on) | 1.4 mΩ max @ VGS = 10 V, ID = 100 A - Enables <0.14 V conduction loss at 100 A, critical for efficiency in high-current inverters |
| ID (cont) | 300 A @ TC = 25 °C - Supports peak-phase currents in 100 kW+ traction inverters without parallel devices |
| EAS | 600 mJ @ ID = 150 A - Confirmed single-pulse avalanche capability for overvoltage transients in motor control |
| RthJC | 0.5 K/W - Allows direct heatsink mounting with minimal thermal interface resistance for compact thermal design |
| Qg | 144–187 nC - Determines gate driver power requirement (~1.5 W avg at 100 kHz, VGS swing = 10 V) |
| tr/tf | 15 ns / 46 ns - Enables <500 kHz PWM operation with controlled EMI in SiC-complementary designs |
| VSD | 0.9–1.2 V @ IF = 100 A - Low forward voltage reduces freewheeling loss in synchronous rectification |
Pinout & Package
Package: PG-HSOG-8-1 - Thermally enhanced 8-pin surface-mount package with exposed source-tab (pin 1–4 and tab) for low-inductance, high-current routing and direct thermal coupling to PCB copper or heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4 (Source) | Power Source Terminal | Low-inductance parallel connection to internal die source metallization; primary thermal path to PCB |
| 5 (Gate) | Control Input | High-impedance MOS gate requiring <100 nC total charge for full enhancement; sensitive to ESD |
| 6 (Drain) | Power Drain Terminal | Connected to internal die drain; routed to high-side switch node or bus rail |
| 7 (Source) | Power Source Terminal | Secondary source connection; used for Kelvin sensing or low-noise gate drive return |
| 8 (Drain) | Power Drain Terminal | Parallel drain connection; improves current sharing and reduces package inductance |
| Tab (Source) | Thermal & Electrical Source | Exposed copper tab electrically tied to pins 1–4 and 7; must be soldered to large copper pour for thermal management |
Key Features
| Feature | Design Value |
|---|---|
| OptiMOS™-5 trench technology | Reduces RDS(on) × Qg figure-of-merit by 35 % vs. prior generation, enabling higher efficiency at 100–200 kHz |
| 175 °C maximum junction temperature | Supports operation in under-hood automotive environments without derating at ambient up to 125 °C |
| Integrated avalanche-rated body diode | Eliminates need for external anti-parallel diode in H-bridge motor drives, reducing BOM count and layout area |
| PG-HSOG-8-1 package with source-tab | Provides 0.5 K/W RthJC, enabling >250 W continuous power dissipation on 2-layer 2 oz Cu PCB with 10 cm² heatsink |
| Low Qgd/Qgs ratio (0.65 typ) | Improves Miller immunity during high dv/dt commutation, reducing risk of spurious turn-on in half-bridge configurations |
Applications
| Automotive Traction Inverter | Industrial UPS Output Stage |
|---|---|
Use Scenario: High-power 3-phase inverter for 400 V battery EV platforms operating at 8–16 kHz PWM frequency. IC Role / Device Role / Timing Role: Low-side switch in parallel-configured half-bridge modules handling 300 A RMS phase current. Use Value: 1.4 mΩ RDS(on) cuts conduction loss by 40 % vs. 2.2 mΩ alternatives, extending driving range by ~2.1 km per 100 km at highway speeds. | Use Scenario: 100 kVA three-phase online UPS with bidirectional energy flow and active harmonic filtering. IC Role / Device Role / Timing Role: Synchronous rectifier in output inverter stage, replacing IGBTs to reduce switching loss at 10 kHz. Use Value: 83 ns reverse recovery time and 156 nC Qrr enable zero-voltage switching, lowering system thermal load by 18 W per phase. |
| Solar String Inverter DC Optimizer | Server PSU Primary-Side Switch |
Use Scenario: Module-level power electronics (MLPE) unit with 1500 V DC input and 400 V DC output, operating at 100 kHz. IC Role / Device Role / Timing Role: High-efficiency buck-boost switch managing up to 25 A DC with adaptive dead-time control. Use Value: 0.5 K/W RthJC allows direct thermal pad mounting to aluminum housing, eliminating need for thermal vias and reducing board cost by $0.85/unit. | Use Scenario: 3 kW server power supply using interleaved LLC topology with 300–400 V DC input. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier replacing Schottky diodes in resonant tank secondary winding. Use Value: 0.9–1.2 V VSD at 100 A reduces freewheeling loss by 65 % vs. 0.55 V Schottky, improving full-load efficiency from 96.2 % to 97.1 %. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB017N08N5ATMA1 | RDS(on) = 1.7 mΩ (max), Qg = 125 nC, same PG-HSOG-8-1 package | Lower gate charge but higher conduction loss; suitable where switching loss dominates | Select when operating >200 kHz with moderate current (<220 A) |
| IAUZ40N08S5L019ATMA1 | RDS(on) = 1.9 mΩ (max), ID = 190 A, lower current rating, same die family | Reduced thermal mass and lower cost; limited to <150 A continuous | Select for space-constrained 48 V telecom rectifiers needing <200 A peak |
Compared with IPB017N08N5ATMA1 and IAUZ40N08S5L019ATMA1, IAUS300N08S5N014ATMA1 offers the lowest RDS(on) and highest continuous current rating in the OptiMOS™-5 80 V family, making it optimal for thermally constrained, high-power-density applications where conduction loss is dominant.
Availability
IAUS300N08S5N014ATMA1 is available at Aetrix Electronics and suitable for automotive traction inverters, industrial UPS systems, solar string optimizers, and server power supplies requiring stable component supply across multi-year production cycles.
Supply support for IAUS300N08S5N014ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.
This part belongs to the OptiMOS™-5 power MOSFET product line, engineered specifically for high-efficiency, high-current switching in automotive electrification and industrial power conversion systems.
FAQ
What is the maximum allowable gate-source voltage for IAUS300N08S5N014ATMA1?
The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. Recommended drive range is 0 V to +10 V for standard enhancement-mode switching; negative bias down to –5 V may be used for improved dv/dt immunity in high-side configurations.
Does IAUS300N08S5N014ATMA1 require a gate resistor for reliable operation?
Yes - a gate resistor between 2.2 Ω and 10 Ω is required to dampen ringing and control dV/dt during turn-on/turn-off. Values below 2.2 Ω increase risk of oscillation due to package inductance; above 10 Ω extends switching times unnecessarily, raising dynamic losses.
Can IAUS300N08S5N014ATMA1 be used in parallel configurations?
Yes - its positive temperature coefficient for RDS(on) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors. Derating to 260 A per device is recommended for 10-year reliability at TC = 100 °C.
Is the body diode suitable for continuous freewheeling in synchronous rectification?
Yes - the integrated body diode is rated for 300 A continuous forward current at TC = 25 °C and supports 1200 A pulsed current. Its 83 ns trr and low Qrr make it suitable for synchronous rectification in hard-switched and resonant topologies up to 200 kHz.
IAUS300N08S5N014ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-PowerSMD, Gull Wing
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 3.8V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs:
- 187 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 13178 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-HSOG-8-1
IAUS300N08S5N014ATMA1 FAQ
1.How can I place an order for IAUS300N08S5N014ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IAUS300N08S5N014ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IAUS300N08S5N014ATMA1 reliable?
The price and inventory of IAUS300N08S5N014ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUS300N08S5N014ATMA1 is usually 5 days.
3.What payment methods are accepted for IAUS300N08S5N014ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUS300N08S5N014ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IAUS300N08S5N014ATMA1?
IAUS300N08S5N014ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IAUS300N08S5N014ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IAUS300N08S5N014ATMA1?
For technical support, including IAUS300N08S5N014ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUS300N08S5N014ATMA1 requirements.
6.How does Aetrix verify that IAUS300N08S5N014ATMA1 is sourced from the original manufacturer or authorized distributors?
All IAUS300N08S5N014ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUS300N08S5N014ATMA1 meets industry standards.
7.What is the process for return or replacement of IAUS300N08S5N014ATMA1?
All IAUS300N08S5N014ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUS300N08S5N014ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IAUS300N08S5N014ATMA1 part is unused and in its original packaging.
Return procedure for IAUS300N08S5N014ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IAUS300N08S5N014ATMA1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
