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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUT165N08S5N029ATMA1

Name: IAUT165N08S5N029ATMA1
Brand: Infineon Technologies
SKU: IAUT165N08S5N029ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUT165N08S5N029ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IAUT165N08S5N029ATMA1.pdf

Description:: MOSFET N-CH 80V 165A 8HSOF

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Product details

Overview

IAUT165N08S5N029ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode power MOSFET in PG-HSOF-8-1 package, rated for 80 V V_DS, 2.4 mΩ R_DS(on) at V_GS = 10 V and I_D = 80 A, 165 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature - deployed in automotive high-side DC-DC converter switches and 48 V battery disconnect circuits.

For engineers reviewing the IAUT165N08S5N029ATMA1 datasheet, IAUT165N08S5N029ATMA1 pinout, IAUT165N08S5N029ATMA1 application, or IAUT165N08S5N029ATMA1 equivalent, key selection criteria include ultra-low R_DS(on) (2.4–2.9 mΩ), 100% single-pulse avalanche ruggedness (225 mJ at I_D = 83 A), MSL1 reflow compatibility, and integrated body diode with 60 ns t_rr and 96 nC Q_rr.

Technical Context

This OptiMOS™-5 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current automotive power stages. Its gate plateau voltage of 5.0 V enables robust drive margin under noisy conditions, while its C_iss/C_oss/C_rss values (typ. 6370 pF / 1027 pF / 54 pF) support fast, controlled turn-on/turn-off with minimal Miller-induced shoot-through risk.

The MOSFET integrates a co-packaged Schottky-enhanced body diode with V_SD = 0.9–1.2 V at 100 A and t_rr = 60 ns, enabling efficient synchronous rectification and bidirectional energy recovery in regenerative braking interfaces without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V nominal systems with ≥1.6× safety margin against transients per ISO 7637-2 Pulse 5a.
R_DS(on) max	2.9 mΩ at V_GS = 10 V, I_D = 80 A - enables <1.2 W conduction loss at 100 A, critical for thermal management in compact modules.
I_D cont.	165 A at T_C = 25 °C - delivers high peak power capability for short-duration load dumps and motor stall events.
E_AS	225 mJ - validated single-pulse avalanche energy ensures reliable operation during inductive switching faults without derating.
t_rr	60 ns - minimizes reverse recovery loss and EMI in hard-switched topologies like buck converters and H-bridges.
Q_g	90 nC - defines gate drive energy requirement; compatible with standard 1–2 A gate drivers (e.g., 1EDN7512B) at ≤100 kHz switching.
R_thJC	0.9 K/W - enables direct heatsink mounting with predictable thermal path for junction-to-case temperature prediction.

Pinout & Package

Package: PG-HSOF-8-1 - surface-mount, thermally enhanced 8-pin exposed-tab leadframe package with integrated source and drain pads for low-inductance, high-current PCB routing and direct thermal coupling to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source (S)	Parallel internal source connections reduce on-resistance and improve current sharing across die terminals.
4, 8	Drain (D)	High-current drain terminals tied directly to exposed copper tab; enable low-inductance connection to ground plane or heatsink.
Tab	Drain (D)	Electrically and thermally connected to drain; must be soldered to PCB copper pour or heatsink for thermal and electrical integrity.
Pin 1 (Gate)	Gate (G)	Isolated control input; requires low-impedance gate driver path to minimize ringing and ensure clean 5.0 V plateau transition.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling.
MSL1 up to 260 °C	Enables standard lead-free reflow assembly without popcorn cracking or delamination risks.
175 °C operating temperature	Supports placement near hot components (e.g., inverters, DC-DC inductors) without thermal derating in engine bay environments.
Ultra-low R_DS(on)	2.4 mΩ typ. at 10 V reduces conduction loss by >35% vs. prior-generation OptiMOS™-4 devices at same voltage class.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress at I_AS = 165 A, ensuring field reliability under unclamped inductive switching.

Applications

Automotive 48 V DC-DC Converter

High-Side Battery Disconnect Switch

Use Scenario: Step-down conversion from 48 V bus to 12 V auxiliary supply in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in interleaved buck topology operating at 200–300 kHz.

Use Value: 2.4 mΩ R_DS(on) and 60 ns t_rr reduce total power loss by 1.8 W per phase vs. legacy 4.5 mΩ parts, improving efficiency from 94.2% to 95.1% at 10 kW output.

Use Scenario: Isolation of 48 V battery during crash or service events in electric commercial vehicles.

IC Role / Device Role / Timing Role: Single high-side power switch controlled via isolated gate driver and fault monitoring circuitry.

Use Value: 225 mJ E_AS rating allows safe interruption of 165 A fault current without destructive failure, meeting ISO 26262 ASIL-B functional safety requirements.

On-Board Charger (OBC) Input Stage

Regenerative Braking Energy Recovery

Use Scenario: Active front-end rectification stage converting AC grid input to regulated DC link for bidirectional OBC operation.

IC Role / Device Role / Timing Role: Low-side switch in totem-pole PFC configuration with zero-voltage switching (ZVS) control.

Use Value: 90 nC Q_g and 54 pF C_rss enable precise ZVS timing window control, reducing switching loss by 32% compared to 120 nC alternatives.

Use Scenario: Bidirectional energy transfer between traction battery and 48 V auxiliary storage during deceleration.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck-boost converter managing regen current flow into 48 V Li-ion pack.

Use Value: Integrated body diode with 96 nC Q_rr and 0.9 V V_SD eliminates need for external Schottky, reducing BOM count and layout area by 27%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUT120N08S5N032ATMA1	R_DS(on) = 3.2 mΩ (max), I_D = 120 A - higher conduction loss, lower current rating.	Suitable for 60–80 A continuous duty cycles where thermal headroom is available.	Select when cost sensitivity outweighs 15% higher conduction loss and reduced avalanche margin.
IPB180N08S5H5ATMA1	Same OptiMOS™-5 platform but TO-leadless package; R_DS(on) = 2.5 mΩ, no integrated tab cooling.	Preferred for board-level thermal management with forced air; less suited for direct heatsink mounting.	Choose when PCB-level heatsinking is preferred over mechanical heatsink integration and footprint permits larger TO-outline.

Compared with IAUT120N08S5N032ATMA1, this part delivers 35 A higher continuous current and 0.3 mΩ lower R_DS(on); versus IPB180N08S5H5ATMA1, it offers superior thermal interface via exposed tab but requires different mounting hardware and layout clearance.

Availability

IAUT165N08S5N029ATMA1 is available at Aetrix Electronics and suitable for automotive 48 V power distribution, high-efficiency DC-DC conversion, and battery disconnect systems requiring stable component supply across multi-year vehicle production programs.

Supply support for IAUT165N08S5N029ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-5 automotive power transistor product line, engineered specifically for high-current, high-reliability 48 V mild-hybrid and electrified vehicle architectures demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IAUT165N08S5N029ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent oxide damage. Recommended drive range is 0 V to 10 V for full enhancement, with 5.0 V gate plateau confirmed in characterization - exceeding 12 V provides no R_DS(on) benefit and increases Miller charge injection risk.

Does IAUT165N08S5N029ATMA1 require external gate resistors in automotive applications?

Yes - a series gate resistor (typically 2.2–4.7 Ω) is required to dampen parasitic oscillations and limit peak gate current during fast transitions. The 90 nC total gate charge and 31 nC Q_gs demand controlled slew rate to avoid shoot-through in half-bridge configurations, especially with PCB trace inductance >3 nH.

Can IAUT165N08S5N029ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (increasing ~0.5%/°C above 25 °C) enables inherent current sharing. Successful parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual source inductance <0.5 nH to prevent dynamic imbalance during switching transitions.

What is the thermal resistance from junction to case, and how is it measured?

R_thJC is 0.9 K/W, measured per JEDEC JESD51-14 using a cold plate setup with 50 psi clamping force on the exposed drain tab. This value assumes full-surface soldering of the tab to a 10 cm² 2-oz copper pad with thermal vias - actual system R_thJA depends on heatsink interface quality and airflow.

IAUT165N08S5N029ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 165A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 108µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6370 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-1

IAUT165N08S5N029ATMA1 FAQ

1.How can I place an order for IAUT165N08S5N029ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUT165N08S5N029ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUT165N08S5N029ATMA1 reliable?

The price and inventory of IAUT165N08S5N029ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUT165N08S5N029ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUT165N08S5N029ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUT165N08S5N029ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUT165N08S5N029ATMA1?

IAUT165N08S5N029ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUT165N08S5N029ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUT165N08S5N029ATMA1?

For technical support, including IAUT165N08S5N029ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUT165N08S5N029ATMA1 requirements.

6.How does Aetrix verify that IAUT165N08S5N029ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUT165N08S5N029ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUT165N08S5N029ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUT165N08S5N029ATMA1?

All IAUT165N08S5N029ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUT165N08S5N029ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUT165N08S5N029ATMA1 part is unused and in its original packaging.

Return procedure for IAUT165N08S5N029ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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