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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUT300N08S5N014ATMA1

Name: IAUT300N08S5N014ATMA1
Brand: Infineon Technologies
SKU: IAUT300N08S5N014ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUT300N08S5N014ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IAUT300N08S5N014ATMA1.pdf

Description:: MOSFET N-CH 80V 300A 8HSOF

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Product details

Overview

IAUT300N08S5N014ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode power MOSFET in PG-HSOF-8-1 package, rated for 80 V V_DS, 1.4 mΩ R_DS(on) at 100 A/10 V, and 300 A continuous drain current at T_C = 25 °C. It operates up to 175 °C junction temperature and is 100% avalanche tested for automotive traction inverters and on-board chargers.

For engineers reviewing the IAUT300N08S5N014ATMA1 datasheet, IAUT300N08S5N014ATMA1 pinout, IAUT300N08S5N014ATMA1 application, or IAUT300N08S5N014ATMA1 equivalent, key selection criteria include ultra-low R_DS(on), MSL1 reflow compatibility, integrated reverse diode performance (V_SD = 0.9–1.2 V @ 100 A), and thermal resistance of 0.5 K/W.

Technical Context

This OptiMOS™-5 device uses trench-gate superjunction technology optimized for high-current, low-conduction-loss operation in 400 V-class automotive EV power stages. Its gate plateau voltage is 4.5 V, and it delivers 144–187 nC total gate charge with 46–60 nC Q_gs and 30–47 nC Q_gd, enabling fast switching under 100 A load conditions.

Dynamic parameters include C_iss = 10.1–13.2 nF, C_oss = 1.6–2.1 nF, and Crss = 71–106 pF at V_DS = 0 V; t_r = 15 ns and t_f = 46 ns at V_DD = 40 V, I_D = 100 A, R_G = 3.5 Ω - supporting high-frequency PWM in traction motor control and DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 400 V bus systems with 5× safety margin against transients
R_DS(on)	1.4 mΩ max @ V_GS = 10 V, I_D = 100 A - enables <1.4 W conduction loss at 100 A
I_D cont.	300 A @ T_C = 25 °C - suitable for high-power phase-leg modules in inverters
E_AS	600 mJ single-pulse - ensures robustness against inductive switching faults
R_thJC	0.5 K/W - allows direct heatsink mounting with minimal thermal interface resistance
Q_g	187 nC max - defines gate drive power requirement for 20 kHz switching
V_SD	1.2 V max @ I_F = 100 A, T_j = 25 °C - limits freewheeling loss in synchronous rectification

Pinout & Package

PG-HSOF-8-1 is a surface-mount, thermally enhanced 8-pin package with exposed drain tab (pins 1–4 and 5–8 are source and gate terminals respectively; tab is drain). Designed for low-inductance, high-current PCB layouts with double-sided cooling capability.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain path	Low-inductance, high-current connection to heatsink; carries full load current
Pins 1–4	Source	Parallel source terminals reduce bondwire inductance and resistive drop
Pins 5–8	Gate	Dual gate inputs enable balanced drive and reduced gate loop inductance

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain applications including traction inverters and OBCs
MSL1 rating	Compatible with standard 260 °C peak reflow profiles without moisture sensitivity concerns
100% avalanche tested	Guarantees single-pulse ruggedness up to 600 mJ at rated current
Ultra-low R_DS(on)	1.4 mΩ enables >98% efficiency in 100 kW inverter half-bridge at 100 A
Integrated body diode	V_SD = 0.9–1.2 V supports efficient synchronous rectification in bidirectional DC-DC

Applications

Electric Vehicle Traction Inverter

On-Board Charger (OBC) Primary Switch

Use Scenario: High-current phase-leg switching in 400 V battery-powered inverters driving permanent magnet motors.

IC Role / Device Role / Timing Role: Main power switch in 3-phase bridge; handles 300 A continuous and 1200 A pulsed currents.

Use Value: 1.4 mΩ R_DS(on) reduces conduction loss by 35% vs. prior-gen 2.2 mΩ devices at same current density.

Use Scenario: Primary-side switching in 11 kW bidirectional OBC using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-duty-cycle hard-switched MOSFET operating at 100 kHz with 100 A RMS current.

Use Value: 0.5 K/W R_thJC enables direct heatsink mounting without thermal vias, simplifying layout.

48 V Mild Hybrid DC-DC Converter

Commercial Vehicle Auxiliary Power Module

Use Scenario: Step-down conversion from 400 V traction battery to 48 V auxiliary bus in HEV architectures.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous buck stage.

Use Value: Low V_SD (0.9–1.2 V) minimizes freewheeling loss during light-load operation.

Use Scenario: Power distribution unit (PDU) for HVAC, steering, and braking systems in Class 8 trucks.

IC Role / Device Role / Timing Role: High-reliability load switch controlling 200 A auxiliary loads with fault protection.

Use Value: 175 °C operating temperature and AEC-Q101 qualification ensure uptime in under-hood environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ40N08S5N022ATMA1	80 V, 2.2 mΩ R_DS(on), 200 A I_D, same PG-HSOF-8-1 package	Lower current rating; suited for 50–70 kW inverters instead of 100+ kW	Select when thermal budget permits higher R_DS(on) to reduce gate drive complexity
IPB180N08S5H5ATMA1	80 V, 1.8 mΩ R_DS(on), 250 A I_D, PG-HSOF-8-1, no AEC-Q101	Industrial-grade only; lacks automotive qualification and 175 °C rating	Acceptable for non-automotive industrial motor drives where qualification is not required

Compared with IAUZ40N08S5N022ATMA1 and IPB180N08S5H5ATMA1, IAUT300N08S5N014ATMA1 uniquely combines 300 A current capability, 1.4 mΩ conduction loss, AEC-Q101 qualification, and 175 °C operation - making it the only option for high-power automotive traction stages requiring all four attributes.

Availability

IAUT300N08S5N014ATMA1 is available at Aetrix Electronics and suitable for electric vehicle traction inverters, on-board chargers, and 48 V mild hybrid DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IAUT300N08S5N014ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-5 automotive power transistor product line, engineered specifically for high-efficiency, high-reliability switching in EV traction inverters and onboard charging systems.

FAQ

What is the maximum allowable gate-source voltage for IAUT300N08S5N014ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks irreversible gate oxide damage. Recommended drive range is 0 V to 10 V for reliable enhancement-mode switching; gate plateau voltage is 4.5 V, confirmed by gate charge curves in the datasheet.

Does IAUT300N08S5N014ATMA1 include an integrated body diode?

Yes - it features a monolithic, fast-recovery body diode with V_SD = 0.9–1.2 V at 100 A and t_rr = 83 ns. This diode is fully rated for 300 A continuous forward current and 1200 A pulsed current, enabling use in synchronous rectification and freewheeling paths without external diodes.

Is IAUT300N08S5N014ATMA1 suitable for paralleling multiple devices?

Yes - its positive temperature coefficient for R_DS(on) (1.4 mΩ at 25 °C rising to ~2.5 mΩ at 175 °C) ensures inherent current sharing. The dual gate pins (pins 5–8) and parallel source pins (1–4) minimize layout asymmetry, supporting stable paralleling in high-current modules up to 1200 A.

What is the thermal resistance from junction to case, and how is it measured?

R_thJC is 0.5 K/W, measured per JEDEC JESD51-14 with the tab mounted to a cold plate using standardized thermal interface material. This value assumes full tab contact area and is validated via transient dual-interface testing - critical for calculating junction temperature rise in high-power inverter designs.

IAUT300N08S5N014ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 300A (DC)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 230µA

Gate Charge (Qg) (Max) @ Vgs:: 187 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13178 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-1

IAUT300N08S5N014ATMA1 FAQ

1.How can I place an order for IAUT300N08S5N014ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUT300N08S5N014ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUT300N08S5N014ATMA1 reliable?

The price and inventory of IAUT300N08S5N014ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUT300N08S5N014ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUT300N08S5N014ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUT300N08S5N014ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUT300N08S5N014ATMA1?

IAUT300N08S5N014ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUT300N08S5N014ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUT300N08S5N014ATMA1?

For technical support, including IAUT300N08S5N014ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUT300N08S5N014ATMA1 requirements.

6.How does Aetrix verify that IAUT300N08S5N014ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUT300N08S5N014ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUT300N08S5N014ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUT300N08S5N014ATMA1?

All IAUT300N08S5N014ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUT300N08S5N014ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUT300N08S5N014ATMA1 part is unused and in its original packaging.

Return procedure for IAUT300N08S5N014ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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