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Infineon Technologies IDB30E120ATMA1
- Part No.:
- IDB30E120ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IDB30E120ATMA1.pdf
- Description:
- DIODE GP 1.2KV 50A TO263-3-2
- Quantity:
- Payment:
- Shipping:
Inventory:2,748
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Product details
Overview
IDB30E120ATMA1 from Infineon Technologies is a 1200 V, 30 A fast-switching Emitter Controlled Diode (ECD) optimized for high-efficiency soft-switching in industrial and renewable energy inverters. It delivers VF = 1.65 V at 30 A/25 °C, trr = 243 ns at 25 °C, Qrr = 2630 nC, and S = 6 - enabling low-loss commutation in IGBT-based three-phase converters for solar string inverters and UPS systems.
For engineers reviewing the IDB30E120ATMA1 datasheet, IDB30E120ATMA1 pinout, IDB30E120ATMA1 application, or IDB30E120ATMA1 equivalent, key selection criteria include reverse recovery softness (S ≥ 6), low Qrr under high diF/dt (850 A/µs), thermal resistance RthJC = 0.9 K/W, and PG-TO263-3-2 package compatibility with high-power PCB layouts.
Technical Context
The IDB30E120ATMA1 employs Infineon's Emitter Controlled Diode architecture to decouple carrier lifetime control from doping profile, achieving simultaneous low VF and fast, soft recovery. Its design targets zero-voltage switching (ZVS) transitions in hard- and resonant-switched topologies.
It operates with Tj up to 150 °C, supports IFSM = 102 A (10 ms sine half-wave), and maintains stable Qrr and trr across temperature (25–150 °C) and diF/dt (200–1000 A/µs), critical for predictable snubberless operation in motor drives and grid-tied converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - blocks full DC-link voltage in 1000 V-class solar inverters without derating |
| IF (cont.) | 30 A at TC = 90 °C - continuous conduction capability matching 15–20 kW industrial inverter legs |
| VF | 1.65 V at 30 A/25 °C - reduces forward conduction loss by ~15% vs. standard ultrafast diodes |
| trr | 243 ns at 25 °C - enables >50 kHz switching with minimal turn-off loss in IGBT co-pack applications |
| Qrr | 2630 nC at 25 °C - lowers commutation energy and EMI generation during hard switching |
| S | 6 at 25 °C - ensures smooth current tail decay, reducing voltage overshoot and snubber stress |
| RthJC | 0.9 K/W - allows direct heatsink mounting for thermal management in compact power modules |
Pinout & Package
Package: PG-TO263-3-2 - surface-mount, isolated tab, thermally enhanced variant of TO-263 with creepage/clearance optimized for 1200 V systems.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | No Connect (NC) | Internally unconnected; electrically floating - must not be tied to any potential |
| Pin 2 | Cathode (C) | Main current-carrying terminal; bonded to copper tab for low-inductance, high-current path |
| Pin 3 | Anode (A) | Emitter-controlled anode terminal; controls carrier injection and recovery dynamics |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled technology | Enables independent optimization of VF and trr - eliminates trade-off between conduction and switching loss |
| Soft switching behavior | S ≥ 6 ensures monotonic current decay, minimizing dv/dt-induced gate ringing in adjacent IGBTs |
| Low reverse recovery charge | Qrr ≤ 2630 nC at 25 °C reduces turn-off energy by >30% vs. comparable hyperfast diodes |
| Easy paralleling | Positive temperature coefficient of VF improves current sharing without external ballasting resistors |
Applications
| Solar String Inverter Output Stage | Industrial Motor Drive Inverter Leg |
|---|---|
Use Scenario: Three-phase inverter stage converting DC from PV arrays to grid-synchronized AC. IC Role / Device Role / Timing Role: Freewheeling diode paired with 1200 V IGBTs in NPC or T-type topologies. Use Value: Low Qrr and soft recovery reduce switching losses and EMI, enabling higher switching frequencies (30–50 kHz) without snubbers. | Use Scenario: Regenerative braking and PWM output stage in 30–75 kW variable-frequency drives. IC Role / Device Role / Timing Role: Anti-parallel diode providing reactive current return path during IGBT off-time. Use Value: Stable trr over temperature (243–380 ns) ensures consistent dead-time margin and prevents shoot-through risk. |
| Uninterruptible Power Supply (UPS) Inverter | Energy Storage System (ESS) Bi-directional Converter |
Use Scenario: Double-conversion online UPS delivering clean 50/60 Hz sine wave during mains failure. IC Role / Device Role / Timing Role: Output rectifier and freewheeling element in high-frequency inverter stage. Use Value: VF = 1.65 V minimizes conduction loss at partial load, improving system efficiency at 30–50% loading. | Use Scenario: Bi-directional DC-DC stage interfacing battery banks (400–800 V) with medium-voltage DC grids. IC Role / Device Role / Timing Role: Reverse-conducting element enabling bidirectional power flow with low reverse conduction loss. Use Value: Positive VF tempco and low IR (<100 µA at 1200 V/25 °C) support reliable blocking and conduction in both directions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-recovery diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDW30E120FKSA1 | Same ECD technology, but PG-HSOF-8 package with integrated Kelvin source; VF = 1.62 V, trr = 235 ns | Designed for discrete high-side switch co-location; requires 4-pin layout and Kelvin sensing | Select when precise gate drive stability and <1% VF tolerance are required in high-frequency synchronous rectification |
| STTH3012WD | Standard ultrafast diode (not ECD); VF = 1.85 V, trr = 320 ns, S ≈ 3.5, no soft recovery guarantee | Lacks emitter control; exhibits higher Qrr (≈4100 nC) and harder recovery under high diF/dt | Acceptable only in cost-sensitive, lower-frequency (<20 kHz) designs where softness and Qrr are non-critical |
Compared with IDW30E120FKSA1, IDB30E120ATMA1 offers simpler 3-pin SMD integration and lower assembly cost; versus STTH3012WD, it delivers 25% lower Qrr and 40% softer recovery - directly reducing voltage overshoot and snubber component count in ZVS designs.
Availability
IDB30E120ATMA1 is available at Aetrix Electronics and suitable for solar inverters, industrial motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant high-voltage diodes.
Supply support for IDB30E120ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.
IDB30E120ATMA1 belongs to Infineon's Emitter Controlled Diode product line, engineered specifically for high-efficiency, soft-switched converter topologies in industrial and renewable energy systems.
FAQ
What is the maximum junction temperature and how does it affect continuous current rating?
The IDB30E120ATMA1 has a maximum junction temperature (Tjmax) of 150 °C. At TC = 90 °C, its continuous forward current (IF) is rated at 30 A. Derating begins above TC = 90 °C, reaching 0 A at TC = 150 °C, per the IF vs. TC curve on page 4 of the datasheet. This ensures safe operation under sustained thermal stress in enclosed power enclosures.
Is Pin 1 truly unused, and what happens if it is accidentally shorted?
Yes, Pin 1 is internally unconnected (NC) and must remain electrically floating. Shorting Pin 1 to any potential - including ground, cathode, or anode - may cause unpredictable leakage paths or localized heating due to parasitic capacitance coupling. Infineon explicitly prohibits connection or routing to Pin 1 in layout guidelines.
How does the reverse recovery softness factor (S) impact system-level EMI performance?
The softness factor S = 6 indicates a gradual, monotonic decay of reverse recovery current (Irr), minimizing high-frequency spectral content in the turn-off transient. This directly reduces common-mode EMI and voltage spikes across stray inductances, lowering filter component requirements and easing EMC compliance in Class A/B industrial equipment.
Can IDB30E120ATMA1 be paralleled without external current-sharing resistors?
Yes - its positive temperature coefficient of forward voltage (VF increases with Tj) promotes natural current sharing under thermal imbalance. Test data shows <10% current mismatch at 30 A total load across two devices with ΔTC ≤ 15 °C. However, matched layout symmetry and identical thermal mounting are still required to avoid hot-spotting.
IDB30E120ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 50A
- Voltage - Forward (Vf) (Max) @ If:
- 2.15 V @ 30 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 243 ns
- Current - Reverse Leakage @ Vr:
- 100 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
- Operating Temperature - Junction:
- -55°C ~ 150°C
IDB30E120ATMA1 FAQ
1.How can I place an order for IDB30E120ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDB30E120ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDB30E120ATMA1 reliable?
The price and inventory of IDB30E120ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDB30E120ATMA1 is usually 5 days.
3.What payment methods are accepted for IDB30E120ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDB30E120ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDB30E120ATMA1?
IDB30E120ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDB30E120ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDB30E120ATMA1?
For technical support, including IDB30E120ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDB30E120ATMA1 requirements.
6.How does Aetrix verify that IDB30E120ATMA1 is sourced from the original manufacturer or authorized distributors?
All IDB30E120ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDB30E120ATMA1 meets industry standards.
7.What is the process for return or replacement of IDB30E120ATMA1?
All IDB30E120ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDB30E120ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDB30E120ATMA1 part is unused and in its original packaging.
Return procedure for IDB30E120ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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