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Infineon Technologies IDB45E60ATMA1
- Part No.:
- IDB45E60ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IDB45E60ATMA1.pdf
- Description:
- DIODE GEN PURP 600V 71A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,873
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Product details
Overview
IDB45E60ATMA1 from Infineon Technologies is a 600 V, 45 A fast-switching Emitter Controlled (EmCon) diode in PG-TO263-3 package, featuring 1.5 V forward voltage at 45 A and 175 °C maximum junction temperature. It delivers soft switching, low reverse recovery charge (1400 nC typ. at 25 °C), and low trr (140 ns typ. at 25 °C), enabling high-efficiency PFC and inverter stages in industrial motor drives.
For engineers reviewing the IDB45E60ATMA1 datasheet, IDB45E60ATMA1 pinout, IDB45E60ATMA1 application, or IDB45E60ATMA1 equivalent, key selection criteria include reverse recovery softness factor (S = 3.1 typ.), thermal resistance (RthJC = 0.8 K/W), and continuous current derating above TC = 90 °C - all critical for paralleling and thermal management in high-power converters.
Technical Context
This EmCon diode uses emitter-controlled carrier lifetime modulation to achieve fast, soft reverse recovery without snubbers. Its structure enables low Qrr (1400–2900 nC across 25–150 °C) and controlled Irrm (23–29 A), reducing EMI and switching losses in hard-commutated topologies.
The device operates with defined thermal limits: RthJC = 0.8 K/W ensures efficient heat transfer to heatsinks, while Tjmax = 175 °C supports sustained operation in compact, convection-cooled industrial enclosures. Pin configuration (NC/C/A) isolates gate drive paths and simplifies PCB layout for multi-diode parallel arrays.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - blocks line transients in 400 VAC three-phase rectification without clamping |
| IF (TC=25°C) | 71 A - peak continuous current rating under ideal heatsink conditions |
| VF @ 45 A, 25°C | 1.5 V - reduces conduction loss to ≤67.5 W per diode at rated DC output current |
| trr @ 25°C | 140 ns - enables >100 kHz switching in interleaved PFC with minimal turn-off overshoot |
| Qrr @ 25°C | 1400 nC - lowers di/dt-induced voltage spikes and snubber dissipation |
| S @ 25°C | 3.1 - quantifies soft recovery slope; mitigates EMI vs. abrupt-recovery diodes |
| RthJC | 0.8 K/W - allows direct mounting to aluminum heatsinks with predictable thermal margin |
Pinout & Package
Package: PG-TO263-3 (D²PAK), surface-mount, RoHS-compliant, with isolated tab (Pin 2 = Cathode, Pin 3 = Anode, Pin 1 = No Connect).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | No Connect (NC) | Electrically isolated; eliminates parasitic coupling in high-dV/dt layouts |
| Pin 2 | Cathode (C) | Main current return path; thermally connected to exposed metal tab for heatsinking |
| Pin 3 | Anode (A) | High-current input node; routed with low-inductance trace for fast di/dt handling |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled (EmCon) technology | Enables precise carrier lifetime control for repeatable trr and Qrr across temperature and current |
| Soft switching behavior | S ≥ 3.1 ensures gradual current decay, reducing radiated EMI in unshielded enclosures |
| 175 °C operating junction temperature | Supports full-rated current in ambient up to 85 °C with standard thermal design margins |
| Easy paralleling capability | NC pin and symmetric thermal path minimize current imbalance in multi-device arrays |
Applications
| Industrial Motor Drives | Server Power Supplies |
|---|---|
Use Scenario: Three-phase IGBT-based inverter stage in 15–30 kW variable-frequency drives. IC Role / Device Role / Timing Role: Freewheeling diode providing low-loss, soft-recovery current path during IGBT turn-off. Use Value: 140 ns trr and 3.1 softness factor reduce voltage overshoot by ≥25% versus standard FREDs, lowering snubber size and cost. | Use Scenario: Active clamp forward or LLC resonant converter secondary-side rectification in 1U server PSUs. IC Role / Device Role / Timing Role: High-current synchronous rectifier replacement with fixed-voltage-drop advantage over MOSFETs at light load. Use Value: 1.5 V VF at 45 A yields <0.5% efficiency penalty vs. ideal rectifier, outperforming SiC Schottky in cost-sensitive 12 V/54 A outputs. |
| Solar Inverters | Uninterruptible Power Systems |
Use Scenario: DC-link freewheeling path in transformerless string inverters with bipolar PV grounding. IC Role / Device Role / Timing Role: Bidirectional conduction support during reactive power injection and anti-islanding detection cycles. Use Value: 600 V VRRM and 175 °C Tjmax ensure reliability under desert ambient (70 °C) and grid fault overvoltage (IEC 62109). | Use Scenario: Battery charging and inverter output stage in 3-phase online UPS systems (10–20 kVA). IC Role / Device Role / Timing Role: High-reliability freewheeling element in dual-conversion topology with frequent load transients. Use Value: 162 A IFSM withstands 10 ms surge events from generator start-up or short-circuit faults without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-recovery diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDW45E60D1 | Same EmCon process, but TO-247 package; RthJC = 0.55 K/W; trr = 130 ns typ. | Better thermal performance but larger footprint; requires through-hole PCB assembly. | Select for higher-power designs where heatsink interface dominates thermal budget. |
| STTH6006D | Standard ultrafast diode; VF = 2.1 V @ 45 A; trr = 65 ns; Qrr = 1100 nC; no softness spec. | Lower trr but harder recovery increases EMI; higher VF raises conduction loss by ~27 W. | Select only when strict EMI compliance is not required and board space permits larger heatsink. |
Compared with IDW45E60D1, IDB45E60ATMA1 trades 0.25 K/W higher RthJC for SMD manufacturability and lower system height; versus STTH6006D, it delivers superior EMI control and thermal robustness despite slightly longer trr - critical for high-density, fanless industrial systems.
Availability
IDB45E60ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, server power supplies, and uninterruptible power systems requiring stable component supply and long-term production continuity.
Supply support for IDB45E60ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and advanced silicon diode technologies.
IDB45E60ATMA1 belongs to Infineon's EmCon diode product line, engineered specifically for high-efficiency, high-reliability switching power conversion in industrial and renewable energy systems.
FAQ
Is IDB45E60ATMA1 suitable for paralleling in high-current designs?
Yes. Its NC pin (Pin 1), matched thermal resistance (RthJC = 0.8 K/W), and EmCon process ensure uniform current sharing and temperature rise across parallel devices. Application notes confirm stable operation with up to four units in parallel using symmetrical PCB layout and shared heatsink.
What is the maximum allowable case temperature for continuous 45 A operation?
At TC = 90 °C, the device supports IF = 47 A continuous - exceeding 45 A with 4.4% margin. Derating begins linearly above this point; at TC = 100 °C, rated current drops to ~42 A per datasheet Fig. 2. Full 45 A operation requires TC ≤ 90 °C.
Does IDB45E60ATMA1 require a gate resistor or external snubber network?
No. As a diode, it has no gate terminal and requires no gate resistor. Its soft recovery (S ≥ 3.1) and low Qrr eliminate need for RC snubbers in typical 100–200 kHz PFC and inverter designs, reducing BOM count and layout complexity.
How does reverse recovery performance change at elevated junction temperatures?
trr increases from 140 ns (25 °C) to 195 ns (150 °C); Qrr rises from 1400 nC to 2900 nC. However, softness factor improves from 3.1 to 4.4, maintaining EMI control. Designers must verify voltage overshoot margins at worst-case Tj = 150 °C during transient testing.
IDB45E60ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 71A
- Voltage - Forward (Vf) (Max) @ If:
- 2 V @ 45 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 140 ns
- Current - Reverse Leakage @ Vr:
- 50 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDB45E60ATMA1 FAQ
1.How can I place an order for IDB45E60ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDB45E60ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDB45E60ATMA1 reliable?
The price and inventory of IDB45E60ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDB45E60ATMA1 is usually 5 days.
3.What payment methods are accepted for IDB45E60ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDB45E60ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDB45E60ATMA1?
IDB45E60ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDB45E60ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDB45E60ATMA1?
For technical support, including IDB45E60ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDB45E60ATMA1 requirements.
6.How does Aetrix verify that IDB45E60ATMA1 is sourced from the original manufacturer or authorized distributors?
All IDB45E60ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDB45E60ATMA1 meets industry standards.
7.What is the process for return or replacement of IDB45E60ATMA1?
All IDB45E60ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDB45E60ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDB45E60ATMA1 part is unused and in its original packaging.
Return procedure for IDB45E60ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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