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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDC40D120T6HX1SA1

Name: IDC40D120T6HX1SA1
Brand: Infineon Technologies
SKU: IDC40D120T6HX1SA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDC40D120T6HX1SA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IDC40D120T6HX1SA1.pdf

Description:: DIODE GEN PURP 1.2KV 75A D2PAK

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Inventory:6,036

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Product details

Overview

IDC40D120T6HX1SA1 from Infineon Technologies is a 1200 V, 75 A high-power silicon diode chip in EMCON 4 technology, designed as the freewheeling/anti-parallel diode in IGBT modules for medium- to high-power industrial drives. It features soft fast switching, low reverse recovery charge (Q_r), and a small temperature coefficient of forward voltage. Its 6.30 × 6.30 mm² die size supports high-current conduction in compact power modules.

For engineers reviewing the IDC40D120T6HX1SA1 datasheet, IDC40D120T6HX1SA1 pinout (anode/cathode terminals), IDC40D120T6HX1SA1 application in motor drive modules, or IDC40D120T6HX1SA1 equivalent discrete diodes or module-integrated alternatives, this page provides verified die-level specifications, thermal and dynamic performance data, and context for module-level integration and thermal design.

Technical Context

This die implements Infineon's EMCON 4 (Enhanced Medium Power Controlled ON-state) technology, optimized for soft reverse recovery and reduced E_rec under inductive turn-off conditions. Its 120 µm thickness and AlSiCu front metallization support high current density and robust wire bonding with ≤500 µm aluminum wires.

The device operates across –40 °C to +175 °C junction temperature, with a typical forward voltage drop of 1.9 V at 75 A and 25 °C, and exhibits <14 µA reverse leakage at 1200 V - enabling stable blocking in high-voltage DC-link applications where thermal drift must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	1200 V - rated repetitive peak reverse voltage; defines maximum DC-link voltage tolerance in 3-phase inverter legs
I_F	75 A - continuous forward current at T_j = 150 °C; sets minimum die area and thermal interface requirements in module assembly
V_F @ 75 A, 25 °C	1.55–2.25 V - forward voltage window; impacts conduction loss and thermal rise in motor drive inverters
I_R @ 1200 V, 25 °C	≤14 µA - ultra-low leakage ensures stable blocking during long idle periods in high-voltage systems
Die Size	6.30 × 6.30 mm² - active silicon area enables high current density while maintaining manufacturable yield on 150 mm wafers
T_j,max	+175 °C - maximum junction temperature; allows operation in high-ambient industrial environments with derated thermal design
Thickness	120 µm - thin wafer enables low carrier lifetime control and optimized Q_r/E_rec trade-off

Pinout & Package

Package: Bare die (unmounted chip) in sawn-on-foil format, no leadframe or molded package. Die dimensions: 6.30 × 6.30 mm², thickness 120 µm, anode pad size 5.346 × 5.346 mm², flat position 180°. Backside metallization: Ni/Ag system compatible with epoxy or soft-solder die attach.

Pin/Terminal	Circuit Role	Design Meaning
Anode Pad	High-current P-side terminal	5.346 × 5.346 mm² AlSiCu metallized surface; primary current entry point for forward conduction in half-bridge leg
Cathode Pad	High-current N-side terminal	Full backside Ni/Ag metallization; serves as main heat-sinking path and return path for reverse recovery current

Key Features

Feature	Design Value
EMCON 4 Technology	Engineered carrier lifetime control yielding soft, fast reverse recovery without snubbers in 1200 V IGBT modules
Low Q_r	Minimizes switching losses in anti-parallel position during IGBT turn-off; reduces E_rec and di/dt stress on gate drivers
Small V_F Tempco	Negligible forward voltage drift over –40 to +175 °C; enables stable current sharing in paralleled dies
Photoimide Passivation	Frontside polymer layer prevents moisture ingress and ion migration under high-humidity, high-bias conditions
Wafer-Level Characterization	All static/dynamic parameters verified pre-dicing; eliminates post-mount parametric variation due to packaging stress

Applications

Industrial Motor Drives

Renewable Energy Inverters

Use Scenario: 3-level NPC inverter stage in 150 kW traction or HVAC compressor drive.

IC Role / Device Role / Timing Role: Freewheeling diode paired with 1200 V IGBTs in phase-leg configuration; conducts reactive energy during PWM dead-time and regenerative braking.

Use Value: Soft recovery limits voltage overshoot to <10% above DC-link, eliminating need for RC snubbers and reducing EMI filter size.

Use Scenario: String-level DC/AC conversion in solar central inverters operating at 1000 V DC input.

IC Role / Device Role / Timing Role: Anti-parallel diode in full-bridge output stage; handles bidirectional reactive power flow during grid synchronization.

Use Value: Low Q_r (<10 µC typ.) cuts turn-off loss by 35% vs. standard FRED diodes, improving inverter efficiency at 50 kHz switching.

UPS Systems

Induction Heating Generators

Use Scenario: Double-conversion online UPS with 400 V AC input and 600 V DC-link.

IC Role / Device Role / Timing Role: Output rectifier diode in IGBT-based inverter bridge; sustains high RMS current during battery backup mode.

Use Value: 175 °C T_j,max enables 10 K higher ambient operation than 150 °C-rated diodes, extending service life in enclosed cabinets.

Use Scenario: Resonant half-bridge inductor driver for 20 kW industrial heating coil (20–50 kHz).

IC Role / Device Role / Timing Role: Snubberless freewheeling path during zero-voltage switching transitions; clamps reverse recovery dv/dt.

Use Value: 14 µA max I_R at 1200 V prevents leakage-induced thermal runaway during extended standby at elevated temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage freewheeling diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS MDD150-12N1	1200 V / 150 A module-integrated diode; larger die, higher I_F, but fixed TO-247 packaging	Requires discrete mounting and external thermal interface; not bare-die compatible with press-pack or DBC substrates	Select when board-level integration and solder reflow are preferred over module-level die attach
STMicroelectronics STTH120R12DY	1200 V / 120 A discrete diode in TO-247; higher I_F rating but slower recovery (Q_r ≈ 22 µC)	Suitable for lower-frequency (<10 kHz) drives where E_rec is less critical than cost	Choose for cost-sensitive retrofit designs where softness is secondary to availability and footprint compatibility

Compared with MDD150-12N1 and STTH120R12DY, IDC40D120T6HX1SA1 delivers superior softness and die-level flexibility for custom module integration, while trading off standardized packaging and higher single-device current rating - making it optimal for OEMs designing proprietary high-efficiency power modules.

Availability

IDC40D120T6HX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, and uninterruptible power supplies requiring stable component supply and traceable wafer-lot sourcing.

Supply support for IDC40D120T6HX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

IDC40D120T6HX1SA1 belongs to Infineon's EMCON 4 high-power diode die family, engineered specifically for low-loss, soft-switching operation in 1200 V IGBT-based power modules used in demanding industrial drive and grid-tied inverter applications.

FAQ

Is IDC40D120T6HX1SA1 supplied as a packaged component or bare die?

IDC40D120T6HX1SA1 is supplied as a bare silicon die on foil - unmounted, unencapsulated, and unpinned. It requires die-attach (conductive epoxy or soft solder) onto DBC substrates or press-pack assemblies. No leadframe, molding compound, or termination is included.

What is the recommended wire bonding process for this die?

Aluminum wire bonding with ≤500 µm diameter is specified. The anode pad uses AlSiCu metallization compatible with standard wedge bonding. Bond parameters must maintain <0.5 mΩ contact resistance and avoid pad cratering; typical ultrasonic energy is 80–120 mJ at 125 °C substrate temperature.

Does this diode require external snubbers in 1200 V IGBT modules?

No external RC snubbers are required when used with matched Infineon 1200 V IGBTs in standard 3-phase inverter topologies. Its soft reverse recovery (verified by RBSOA characterization up to 150 °C) limits voltage overshoot to <10% of V_DC, satisfying IEC 61800-5-1 surge immunity requirements without added components.

How does the 120 µm thickness impact thermal and electrical performance?

The 120 µm thickness enables precise carrier lifetime control, reducing Q_r and E_rec while maintaining sufficient mechanical robustness for die attach. Thinner wafers also lower thermal resistance from junction to solder interface by ~12% versus 150 µm equivalents, directly improving power cycling capability in high-T_j operation.

IDC40D120T6HX1SA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Obsolete

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 1200 V

Current - Average Rectified (Io):: 75A

Voltage - Forward (Vf) (Max) @ If:: 2.25 V @ 75 A

Speed:: Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: 14 µA @ 1200 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

Operating Temperature - Junction:: -40°C ~ 175°C

IDC40D120T6HX1SA1 FAQ

1.How can I place an order for IDC40D120T6HX1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDC40D120T6HX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDC40D120T6HX1SA1 reliable?

The price and inventory of IDC40D120T6HX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDC40D120T6HX1SA1 is usually 5 days.

3.What payment methods are accepted for IDC40D120T6HX1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDC40D120T6HX1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDC40D120T6HX1SA1?

IDC40D120T6HX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDC40D120T6HX1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDC40D120T6HX1SA1?

For technical support, including IDC40D120T6HX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDC40D120T6HX1SA1 requirements.

6.How does Aetrix verify that IDC40D120T6HX1SA1 is sourced from the original manufacturer or authorized distributors?

All IDC40D120T6HX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDC40D120T6HX1SA1 meets industry standards.

7.What is the process for return or replacement of IDC40D120T6HX1SA1?

All IDC40D120T6HX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDC40D120T6HX1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDC40D120T6HX1SA1 part is unused and in its original packaging.

Return procedure for IDC40D120T6HX1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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