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Infineon Technologies IDD03SG60CXTMA2
- Part No.:
- IDD03SG60CXTMA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IDD03SG60CXTMA2.pdf
- Description:
- DIODE SIL CARB 600V 3A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,539
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Product details
Overview
IDD03SG60CXTMA2 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage, 3 A continuous forward current at TC < 130 °C, and 2.1–2.3 V forward voltage at 3 A and 25 °C. It delivers zero reverse recovery charge, <10 ns capacitive switching time, and operates reliably up to 175 °C junction temperature-designed for high-efficiency PFC stages in CCM-mode SMPS.
For engineers reviewing the IDD03SG60CXTMA2 datasheet, IDD03SG60CXTMA2 pinout, IDD03SG60CXTMA2 application, or IDD03SG60CXTMA2 equivalent, key selection criteria include its 3.2 nC total capacitive charge, 3.9 K/W junction-to-case thermal resistance, absence of minority-carrier recovery, and PG-TO252-3 surface-mount package with isolated anode/cathode terminals.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-temperature power conversion. Its unipolar conduction eliminates reverse recovery losses and enables stable switching behavior across –55 °C to +175 °C without degradation in QC, tc, or VF drift.
The device uses a planar SiC junction structure optimized for low figure-of-merit (QC/IF), high dv/dt ruggedness (50 V/ns), and robust surge capability (100 A non-repetitive peak forward current at 10 µs). No trr measurement applies due to absence of minority carrier injection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - supports DC-link voltages up to 400 VDC in PFC and solar inverters with margin |
| IF (cont.) | 3 A at TC < 130 °C - defines usable steady-state current under standard heatsinking |
| VF | 2.1–2.3 V @ 3 A, 25 °C - lower conduction loss vs. Si FRD; rises to 2.8 V @ 150 °C |
| QC | 3.2 nC - capacitive charge only; enables predictable EMI and snubberless operation |
| tc | <10 ns - intrinsic capacitive time constant; independent of temperature, load, or di/dt |
| RthJC | 3.9 K/W - enables direct thermal path to heatsink; critical for high-power density designs |
| IF,max | 100 A @ 10 µs - supports short-circuit and inrush current handling in UPS and motor drives |
Pinout & Package
Package: PG-TO252-3 (DPAK), surface-mount, RoHS-compliant, MSL1 reflow capable up to 260 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | No connection (n.c.) | Electrically isolated; no internal bond; must remain unconnected or floating |
| Pin 2 | Anode (A) | Main current entry point; tied to SiC die anode; requires low-inductance layout |
| Pin 3 | Cathode (C) | Main current exit point; connected to large copper pour for thermal and electrical performance |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery (trr = 0) | Eliminates switching loss spikes and EMI from minority carrier tail current |
| Temperature-independent switching | QC, tc, and VF variation < ±15% from –55 °C to 175 °C |
| High dv/dt ruggedness | 50 V/ns rating ensures reliable turn-off in hard-switched topologies with steep voltage transients |
| Low QC/IF figure of merit | 3.2 nC / 3 A = 1.07 nC/A - benchmark for high-frequency SiC diode efficiency |
| 175 °C max junction temperature | Enables compact thermal design in sealed enclosures or high-ambient industrial environments |
Applications
| CCM PFC Boost Stage | Solar Inverter DC-Link |
|---|---|
Use Scenario: Continuous Conduction Mode boost converter in 1–3 kW server/industrial SMPS. IC Role / Device Role / Timing Role: Output rectifier replacing Si FRD to eliminate reverse recovery loss during MOSFET turn-on. Use Value: Reduces system switching loss by >40% and enables 100+ kHz operation without snubbers. | Use Scenario: DC-side freewheeling path in string-level solar inverters with 600 V bus. IC Role / Device Role / Timing Role: Bidirectional energy return path during MPPT transitions and reactive power control. Use Value: Maintains efficiency >98.5% at 150 °C ambient due to stable VF and zero trr. |
| UPS Inverter Output Stage | Industrial Motor Drive Snubberless Clamp |
Use Scenario: High-reliability online double-conversion UPS with 400 VDC bus and IGBT output stage. IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode providing low-loss current recirculation during PWM dead-time. Use Value: Enables 20 kHz PWM without shoot-through risk or voltage overshoot from trr-induced current spikes. | Use Scenario: Regenerative braking clamp in 7.5–15 kW servo drives with 600 V DC bus. IC Role / Device Role / Timing Role: Fast clamping diode absorbing inductive kickback energy into DC-link capacitor. Use Value: Withstands 100 A surge (10 µs) and dissipates stored energy with <1.5 µJ per cycle at 600 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D03060E (Wolfspeed) | Same 600 V / 3 A rating; 2.5 V VF typ. @ 3 A, 25 °C; RthJC = 4.2 K/W | Higher VF increases conduction loss in high-duty-cycle PFC; identical surge rating | Prefer IDD03SG60CXTMA2 where VF < 2.3 V is required for <15 W conduction loss budget |
| STPSC306D (STMicroelectronics) | 600 V / 3 A; 2.2 V VF @ 3 A, 25 °C; QC = 3.5 nC; RthJC = 4.0 K/W | 0.3 nC higher QC increases EMI filtering burden; same thermal envelope | Acceptable where layout allows extra 10–15% snubber capacitance; otherwise IDD03SG60CXTMA2 offers tighter QC control |
Compared with C3D03060E and STPSC306D, IDD03SG60CXTMA2 provides the lowest VF at room temperature and tightest QC specification-critical for minimizing both conduction loss and high-frequency EMI in space-constrained CCM PFC designs.
Availability
IDDD03SG60CXTMA2 is available at Aetrix Electronics and suitable for CCM PFC boost converters, solar inverter DC-link rectification, and UPS inverter output stages requiring stable component supply, high-temperature reliability, and zero-recovery switching performance.
Supply support for IDD03SG60CXTMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies.
IDDD03SG60CXTMA2 belongs to the thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-frequency, high-efficiency AC-DC and DC-DC conversion where zero reverse recovery and thermal stability are mandatory.
FAQ
What is the maximum allowable PCB copper area for optimal thermal performance?
The datasheet specifies two thermal test conditions: minimal footprint (RthJA = 75 K/W) and 6 cm² cooling area on 40 mm × 40 mm FR4 PCB with 70 µm copper (RthJA = 50 K/W). For production designs targeting ≤110 °C case temperature at 3 A, use ≥6 cm² single-layer copper connected directly to Pin 3 (cathode) with multiple thermal vias.
Does IDD03SG60CXTMA2 require gate driving or external control signals?
No. IDD03SG60CXTMA2 is a passive two-terminal power diode with no gate, control input, or bias requirement. It conducts when anode voltage exceeds cathode voltage by >VF, and blocks when reverse-biased-fully autonomous operation with no drive circuitry needed.
Can this diode replace a silicon fast recovery diode in an existing 600 V design without layout changes?
Yes, but only if the PCB pad layout matches PG-TO252-3 (DPAK) mechanical outline and thermal copper area is ≥6 cm². Electrical replacement is drop-in for voltage/current ratings, but reduced VF and zero trr may require snubber adjustment or gate drive timing review to avoid unintended oscillation in legacy circuits.
Is avalanche energy rating specified for IDD03SG60CXTMA2?
No avalanche energy (EAS) rating is provided. The device is tested per JEDEC JESD22-A115 for 10 ms at 20 mA under avalanche conditions, confirming robustness against transient overvoltage-but it is not characterized or guaranteed for repetitive avalanche operation like some Si MOSFETs.
IDD03SG60CXTMA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 2.3 V @ 3 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 15 µA @ 600 V
- Capacitance @ Vr, F:
- 60pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDD03SG60CXTMA2 FAQ
1.How can I place an order for IDD03SG60CXTMA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDD03SG60CXTMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDD03SG60CXTMA2 reliable?
The price and inventory of IDD03SG60CXTMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDD03SG60CXTMA2 is usually 5 days.
3.What payment methods are accepted for IDD03SG60CXTMA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDD03SG60CXTMA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDD03SG60CXTMA2?
IDD03SG60CXTMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDD03SG60CXTMA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDD03SG60CXTMA2?
For technical support, including IDD03SG60CXTMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDD03SG60CXTMA2 requirements.
6.How does Aetrix verify that IDD03SG60CXTMA2 is sourced from the original manufacturer or authorized distributors?
All IDD03SG60CXTMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDD03SG60CXTMA2 meets industry standards.
7.What is the process for return or replacement of IDD03SG60CXTMA2?
All IDD03SG60CXTMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDD03SG60CXTMA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDD03SG60CXTMA2 part is unused and in its original packaging.
Return procedure for IDD03SG60CXTMA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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