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Infineon Technologies IDD04SG60CXTMA1
- Part No.:
- IDD04SG60CXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IDD04SG60CXTMA1.pdf
- Description:
- DIODE SIC 600V 5.6A TO252-31
- Quantity:
- Payment:
- Shipping:
Inventory:9,941
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Product details
Overview
IDD04SG60CXTMA1 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide Schottky diode rated for 600 V repetitive peak reverse voltage, 4 A continuous forward current at TC < 130 °C, and 2.1–2.3 V forward voltage at 4 A and 25 °C. It delivers zero reverse recovery charge, <10 ns capacitive switching time, and operates reliably up to 175 °C junction temperature - deployed in CCM PFC stages of high-efficiency SMPS.
For engineers reviewing the IDD04SG60CXTMA1 datasheet, IDD04SG60CXTMA1 pinout, IDD04SG60CXTMA1 application, or IDD04SG60CXTMA1 equivalent, key selection criteria include its 4.5 nC total capacitive charge, 3.5 K/W junction-to-case thermal resistance, absence of minority-carrier recovery, and PG-TO252-3 package compatibility with high-power SMD layouts.
Technical Context
This SiC Schottky diode eliminates reverse recovery losses by virtue of its majority-carrier conduction mechanism, enabling operation at high dv/dt (50 V/ns) without oscillation or snubbing. Its temperature-independent switching behavior and low QC/IF figure of merit support stable performance across -55 °C to 175 °C ambient conditions.
Designed for hard-switched topologies, it sustains non-repetitive surge currents up to 120 A (10 µs) and integrates a robust 600 V breakdown voltage tested at 20 mA. Thermal design leverages a low RthJC of 3.5 K/W and supports PCB cooling via a 6 cm² copper area for drain connection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - blocks full-line transients in 400 V AC-input PFC and solar string inverters |
| IF (cont.) | 4 A at TC < 130 °C - enables compact heatsinking in space-constrained 1–2 kW converters |
| VF | 2.1–2.3 V @ 4 A, 25 °C - reduces conduction loss vs. Si counterparts while maintaining SiC efficiency gains |
| QC | 4.5 nC - determines turn-off energy in hard-switched MOSFET/SiC-FET bridges; critical for EMI and loss budgeting |
| tc | <10 ns - defines capacitive displacement current duration; independent of temperature, load, or di/dt |
| RthJC | 3.5 K/W - allows direct thermal path to heatsink or copper pour, supporting >90% power density improvement over TO-220 Si diodes |
| IR | 0.3–25 µA @ 600 V, 25 °C - ensures minimal leakage in high-impedance bias networks and standby modes |
Pinout & Package
Package: PG-TO252-3 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Pin 1: n.c., Pin 2: Anode (A), Pin 3: Cathode (C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | No connect | Electrically isolated; no routing required - simplifies layout and avoids unintended coupling |
| Pin 2 | Anode | Connects to AC input or switch node side; carries full forward current during conduction phase |
| Pin 3 | Cathode | Drain-side connection point; ties to DC bus or output capacitor; serves as primary thermal interface via exposed pad |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery | Eliminates trr-related switching loss and EMI spikes - enables higher-frequency PFC operation without snubbers |
| Temperature-stable QC | Capacitive charge remains constant across -55 °C to 175 °C - ensures predictable turn-off timing in wide-temp environments |
| High dv/dt ruggedness | 50 V/ns rating prevents false triggering in fast-rising gate-drive or inverter leg waveforms |
| Low RthJC | 3.5 K/W enables direct thermal coupling to PCB copper - reduces need for external heatsinks in 1–3 kW designs |
| JEDEC-qualified reliability | Qualified per J-STD-20/JESD22 for industrial and renewable energy applications - supports long-term field deployment |
Applications
| CCM PFC Boost Stage | Solar String Inverter DC Link |
|---|---|
Use Scenario: Continuous Conduction Mode boost converter operating at 65–100 kHz with 400 V DC bus and 1.5 kW output. IC Role / Device Role / Timing Role: Freewheeling diode conducting during MOSFET off-time; handles full output current with zero reverse recovery. Use Value: Enables >98.5% system efficiency by eliminating trr loss and reducing EMI filtering requirements. | Use Scenario: DC link clamping and freewheeling in 1000 V-class string inverters with bidirectional power flow. IC Role / Device Role / Timing Role: High-voltage output rectifier and anti-parallel path for IGBT/SiC-FET bridge legs. Use Value: Withstands 600 V VRRM and 120 A surge, enabling reliable operation under partial shading and grid fault conditions. |
| UPS Output Rectification | Motor Drive Snubberless Freewheeling |
Use Scenario: Online double-conversion UPS with 380–400 V DC bus and 2 kVA output, requiring high reliability and low maintenance. IC Role / Device Role / Timing Role: Output stage freewheeling diode in IGBT-based inverter leg; conducts during dead-time and regenerative braking. Use Value: Zero reverse recovery prevents shoot-through risk and eliminates need for active snubbers - improving MTBF. | Use Scenario: 7.5 kW industrial motor drive using 650 V SiC half-bridge modules with 15–25 kHz PWM. IC Role / Device Role / Timing Role: External freewheeling path paralleling internal body diodes of SiC MOSFETs to reduce conduction loss and thermal stress. Use Value: 2.8 V VF @ 150 °C and 4 A lowers average conduction loss by 35% vs. Si alternatives - extending thermal margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D04060E (Wolfspeed) | Same 600 V/4 A rating; slightly higher VF (2.3–2.5 V); RthJC = 3.0 K/W | Better thermal performance but tighter VF tolerance; requires revalidation of gate-drive timing margins | Preferred where board-level thermal resistance dominates; verify layout compatibility with D2PAK footprint |
| STPSC4H065 (STMicroelectronics) | 650 V rating; 4 A IF; VF = 1.7 V @ 25 °C; QC = 5.2 nC; RthJC = 4.0 K/W | Higher voltage headroom but higher capacitive charge - increases turn-off loss in high-frequency PFC | Use when 650 V derating is mandatory; accept ~15% higher switching loss in 100 kHz+ designs |
Compared with C3D04060E and STPSC4H065, IDD04SG60CXTMA1 offers the lowest QC/IF FoM (1.13 nC/A) and tightest VF spec at 150 °C - making it optimal for thermally constrained, high-frequency CCM PFC where switching loss dominates.
Availability
IDDD04SG60CXTMA1 is available at Aetrix Electronics and suitable for CCM PFC boost stages, solar string inverter DC links, UPS output rectification, and motor drive freewheeling applications requiring stable component supply, JEDEC-qualified reliability, and high-temperature operation up to 175 °C.
Supply support for IDD04SG60CXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDDD04SG60CXTMA1 belongs to the thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency power conversion systems where zero reverse recovery and thermal stability are critical.
FAQ
What is the maximum allowable case temperature for continuous operation?
The IDD04SG60CXTMA1 supports continuous forward current of 4 A only when case temperature remains below 130 °C. At 150 °C case temperature, the rated continuous current drops to 13.5 A for 10 ms pulses, but steady-state operation must respect the derating curve - exceeding 130 °C risks thermal runaway due to positive VF temperature coefficient.
Does this diode require a gate resistor or snubber network?
No. As a majority-carrier SiC Schottky diode, IDD04SG60CXTMA1 exhibits no reverse recovery charge or minority-carrier tail current. It does not generate voltage spikes during turn-off and therefore requires no external snubber or gate resistor - unlike Si PiN or fast-recovery diodes used in the same topologies.
Can IDD04SG60CXTMA1 be used in parallel configurations?
Yes, but with strict layout symmetry. Its positive VF temperature coefficient enables current sharing; however, mismatched thermal paths or trace inductance will cause imbalance. Parallel operation requires identical copper area, symmetric placement, and shared thermal plane - validated with IR imaging under full-load conditions.
Is the PG-TO252-3 package lead-free and RoHS compliant?
Yes. IDD04SG60CXTMA1 uses Pb-free lead plating and is fully RoHS compliant per EU Directive 2011/65/EU. The device meets JEDEC J-STD-20 moisture sensitivity level MSL1, allowing unlimited floor life and standard reflow soldering at peak 260 °C without preconditioning.
IDD04SG60CXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 5.6A
- Voltage - Forward (Vf) (Max) @ If:
- 2.3 V @ 4 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 25 µA @ 600 V
- Capacitance @ Vr, F:
- 80pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3-11
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDD04SG60CXTMA1 FAQ
1.How can I place an order for IDD04SG60CXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDD04SG60CXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDD04SG60CXTMA1 reliable?
The price and inventory of IDD04SG60CXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDD04SG60CXTMA1 is usually 5 days.
3.What payment methods are accepted for IDD04SG60CXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDD04SG60CXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDD04SG60CXTMA1?
IDD04SG60CXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDD04SG60CXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDD04SG60CXTMA1?
For technical support, including IDD04SG60CXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDD04SG60CXTMA1 requirements.
6.How does Aetrix verify that IDD04SG60CXTMA1 is sourced from the original manufacturer or authorized distributors?
All IDD04SG60CXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDD04SG60CXTMA1 meets industry standards.
7.What is the process for return or replacement of IDD04SG60CXTMA1?
All IDD04SG60CXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDD04SG60CXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDD04SG60CXTMA1 part is unused and in its original packaging.
Return procedure for IDD04SG60CXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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