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Infineon Technologies IDD04SG60CXTMA2
- Part No.:
- IDD04SG60CXTMA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IDD04SG60CXTMA2.pdf
- Description:
- DIODE SIL CARB 600V 4A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,891
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Product details
Overview
IDD04SG60CXTMA2 from Infineon Technologies is a 3rd-generation thinQ™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage, 4 A continuous forward current at TC < 130 °C, and 2.1–2.3 V forward voltage at 4 A and 25 °C. It delivers zero reverse recovery charge, <10 ns switching time, and 4.5 nC total capacitive charge - enabling high-efficiency PFC stages in CCM-mode SMPS.
For engineers reviewing the IDD04SG60CXTMA2 datasheet, IDD04SG60CXTMA2 pinout, IDD04SG60CXTMA2 application, or IDD04SG60CXTMA2 equivalent, key selection criteria include its SiC-based zero-recovery behavior, thermal resistance of 3.5 K/W (junction-to-case), surge capability up to 120 A (10 µs), and PG-TO252-3 surface-mount package optimized for high-temperature power conversion.
Technical Context
This SiC Schottky diode operates without minority carrier injection, eliminating reverse recovery losses and enabling stable switching performance across –55 °C to 175 °C junction temperatures. Its dv/dt ruggedness is rated at 50 V/ns under 0–480 V transition, and it exhibits temperature-independent capacitance and switching time.
The device uses a planar SiC junction with optimized guard ring design for robust 600 V breakdown. Total capacitive charge (QC) remains fixed at 4.5 nC regardless of di/dt or temperature - a design feature critical for predictable EMI and snubberless operation in high-frequency converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - supports DC-link voltages up to 400 V nominal in boost PFC and solar inverters |
| IF (continuous) | 4 A at TC < 130 °C - enables compact heatsinking in space-constrained 1–2 kW power supplies |
| VF | 2.1–2.3 V @ 4 A, 25 °C - lower conduction loss than Si counterparts at high temperature |
| QC | 4.5 nC - fixed capacitive charge ensures consistent turn-off energy and snubber design |
| RthJC | 3.5 K/W - allows direct thermal path to PCB copper pour or heatsink for reliable 175 °C operation |
| tc | <10 ns - defines capacitive displacement current decay time; independent of Tj, IF, and di/dt |
| IF,max | 120 A @ 10 µs - supports short-circuit and inrush current handling in motor drives and UPS |
Pinout & Package
Package: PG-TO252-3 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Pin 1: n.c., Pin 2: Anode (A), Pin 3: Cathode (C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | No connection | Electrically isolated terminal; no internal bond wire or die connection |
| Pin 2 | Anode | Connects to SiC epitaxial layer; carries forward current into device |
| Pin 3 | Cathode | Exposed metal pad tied to SiC substrate; primary thermal and electrical return path |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery | Eliminates trr-related switching losses and EMI spikes in hard-switched topologies |
| Temperature-independent QC | Enables stable snubber sizing and predictable turn-off energy across full operating range |
| High dv/dt ruggedness (50 V/ns) | Withstands fast voltage transients in high-speed gate driver circuits and resonant converters |
| Low RthJC (3.5 K/W) | Supports >90% derating margin at 175 °C junction, reducing need for active cooling |
| RoHS-compliant Pb-free plating | Meets IPC-J-STD-020 MSL1 reflow profile (260 °C peak) without solder joint reliability risk |
Applications
| CCM Boost PFC | Solar String Inverter DC-Link |
|---|---|
Use Scenario: Continuous Conduction Mode (CCM) boost converter in 1.5–2 kW server PSU front-end. IC Role / Device Role / Timing Role: Output rectifier diode handling 400 V DC-link with 100–300 kHz switching. Use Value: Zero Qrr reduces conduction + switching loss by ~35% vs. Si FRD, improving efficiency from 95.2% to 96.8% at full load. | Use Scenario: DC-link freewheeling path in dual-stage solar string inverter with 600 V max bus voltage. IC Role / Device Role / Timing Role: Bidirectional clamping and regeneration path during MPPT transitions. Use Value: Stable 4.5 nC QC enables precise clamp energy calculation and eliminates thermal runaway risk at 150 °C ambient. |
| Industrial UPS Rectifier Stage | EV Onboard Charger AC/DC Stage |
Use Scenario: High-reliability rectification in 3 kVA industrial UPS with 10 ms hold-up requirement. IC Role / Device Role / Timing Role: Input stage diode in phase-shifted full-bridge with 120 A surge tolerance. Use Value: 120 A non-repetitive surge rating at 10 µs supports capacitor pre-charge and fault-clearing without derating. | Use Scenario: AC/DC front-end in 6.6 kW OBC using interleaved PFC with 100 kHz switching. IC Role / Device Role / Timing Role: Fast-recovery output diode in Vienna rectifier leg. Use Value: <10 ns tc and 50 V/ns dv/dt rating prevent false triggering of overvoltage protection during line transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D04060E (Wolfspeed) | Same 600 V / 4 A rating; 2.5 V VF @ 4 A, 25 °C; RthJC = 3.0 K/W | Higher VF increases conduction loss in low-Vin PFC; better thermal resistance suits higher-power density layouts | Select when board-level thermal resistance dominates and VF penalty is acceptable for tighter footprint |
| STPSC4H065 (STMicroelectronics) | 650 V rating; 2.2 V VF @ 4 A, 25 °C; QC = 5.2 nC; RthJC = 4.0 K/W | Higher voltage margin useful in 450 V DC-link designs; 15% higher QC requires larger snubber | Select for systems requiring 650 V headroom or where ST's qualification for automotive-grade stress testing is required |
Compared with C3D04060E and STPSC4H065, IDD04SG60CXTMA2 offers the lowest VF among 600 V-class 4 A SiC diodes and uniquely guarantees fixed QC - simplifying EMI filter design and enabling higher-frequency operation without snubber recalibration.
Availability
IDDD04SG60CXTMA2 is available at Aetrix Electronics and suitable for CCM PFC, solar string inverters, industrial UPS, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and RoHS-compliant SiC power devices.
Supply support for IDD04SG60CXTMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This device belongs to Infineon's thinQ™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-frequency, high-temperature power conversion where zero reverse recovery and thermal stability are mandatory.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The IDD04SG60CXTMA2 is rated for continuous operation up to 175 °C junction temperature. Its thermal resistance (RthJC = 3.5 K/W) and stable electrical parameters across temperature ensure reliable performance in high-ambient environments such as enclosed UPS enclosures or solar inverter heat sinks without forced air cooling.
Does this diode require a gate resistor or external snubber network?
No gate resistor is needed - it is a passive diode. An external snubber is optional: due to fixed QC = 4.5 nC and absence of reverse recovery, snubber design depends only on parasitic inductance and desired dv/dt control. Many 100–300 kHz PFC designs operate reliably without snubbers when layout inductance is minimized below 20 nH.
Can IDD04SG60CXTMA2 replace a silicon fast recovery diode in an existing design?
Yes, with layout review: the PG-TO252-3 footprint is identical to many Si FRDs, but thermal and electrical behavior differs significantly. Key checks include verifying PCB copper area for thermal dissipation (≥6 cm² recommended), confirming gate driver dv/dt immunity (no reverse recovery spikes), and recalculating clamp energy using QC instead of Qrr.
Is this part qualified for automotive applications?
No - IDD04SG60CXTMA2 is not AEC-Q101 qualified. Infineon explicitly states that use in automotive, aviation, aerospace, or life-support systems requires separate written approval. For automotive-grade alternatives, consider Infineon's IDH04SG60C or IDH10SG60C series, which undergo extended stress testing per AEC-Q101.
IDD04SG60CXTMA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 4A
- Voltage - Forward (Vf) (Max) @ If:
- 2.3 V @ 4 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 25 µA @ 600 V
- Capacitance @ Vr, F:
- 80pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDD04SG60CXTMA2 FAQ
1.How can I place an order for IDD04SG60CXTMA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDD04SG60CXTMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDD04SG60CXTMA2 reliable?
The price and inventory of IDD04SG60CXTMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDD04SG60CXTMA2 is usually 5 days.
3.What payment methods are accepted for IDD04SG60CXTMA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDD04SG60CXTMA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDD04SG60CXTMA2?
IDD04SG60CXTMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDD04SG60CXTMA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDD04SG60CXTMA2?
For technical support, including IDD04SG60CXTMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDD04SG60CXTMA2 requirements.
6.How does Aetrix verify that IDD04SG60CXTMA2 is sourced from the original manufacturer or authorized distributors?
All IDD04SG60CXTMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDD04SG60CXTMA2 meets industry standards.
7.What is the process for return or replacement of IDD04SG60CXTMA2?
All IDD04SG60CXTMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDD04SG60CXTMA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDD04SG60CXTMA2 part is unused and in its original packaging.
Return procedure for IDD04SG60CXTMA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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