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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDD05SG60CXTMA1

Name: IDD05SG60CXTMA1
Brand: Infineon Technologies
SKU: IDD05SG60CXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDD05SG60CXTMA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IDD05SG60CXTMA1.pdf

Description:: DIODE SIL CARB 600V 5A TO252-3

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Product details

Overview

IDD05SG60CXTMA1 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 5 A continuous forward current at T_C < 130 °C, with zero reverse recovery charge (Q_C = 6 nC), 2.1–2.3 V forward voltage at 5 A/25 °C, and 2.7 K/W junction-to-case thermal resistance - deployed in CCM PFC stages of high-efficiency SMPS.

For engineers reviewing the IDD05SG60CXTMA1 datasheet, IDD05SG60CXTMA1 pinout, IDD05SG60CXTMA1 application, or IDD05SG60CXTMA1 equivalent, key selection criteria include its SiC-based temperature-independent switching, absence of minority-carrier recovery, surge capability (I_F,max = 150 A @ 10 µs), low Q_C/I_F figure of merit, and PG-TO252-3 surface-mount package compatibility with high-power density board layouts.

Technical Context

This SiC Schottky diode operates without minority carrier injection, eliminating reverse recovery time (t_rr) and associated switching losses. Its capacitive displacement current waveform exhibits a fixed time constant t_c < 10 ns, independent of junction temperature, load current, or di/dt.

Thermal performance is defined by R_thJC = 2.7 K/W and operation up to T_j = 175 °C, enabling stable conduction in high-temperature motor drive and solar inverter DC-link rectification where silicon diodes would suffer accelerated degradation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - supports DC-link voltages up to 400 VDC bus with 50% safety margin in solar inverters and UPS systems
I_F (cont.)	5 A @ T_C < 130 °C - enables compact heatsinking in space-constrained 1–2 kW PFC modules
V_F	2.1–2.3 V @ 5 A, 25 °C - reduces forward conduction loss vs. Si counterparts, improving efficiency at light-to-mid loads
Q_C	6 nC - minimizes turn-off energy loss in hard-switched totem-pole PFC topologies
R_thJC	2.7 K/W - allows direct thermal coupling to PCB copper pour or heatsink for reliable 56 W power dissipation
t_c	<10 ns - defines fast, predictable capacitive switching behavior with no temperature-dependent delay
I_F,max	150 A @ 10 µs - withstands short-circuit transients in motor drive freewheeling paths without avalanche stress

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, single-ended anode-cathode configuration with exposed drain pad for thermal conduction. Pin 1: n.c., Pin 2: Anode (A), Pin 3: Cathode (C).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	No connection	Electrically isolated terminal; no routing required - simplifies layout and avoids accidental shorts
Pin 2	Anode	Forward current entry point; connects to AC input or switching node in PFC boost stage
Pin 3	Cathode	High-side output node; ties to DC bus capacitor positive rail in bridgeless PFC or inverter DC-link

Key Features

Feature	Design Value
Silicon Carbide (SiC) material	Enables 175 °C max junction temperature and eliminates minority-carrier storage - critical for high-temp industrial drives
No reverse recovery (t_rr = 0)	Removes switching loss spikes and EMI generation during diode commutation in high-frequency PFC
Low Q_C/I_F figure of merit	Optimizes trade-off between conduction loss and switching loss in >100 kHz totem-pole and interleaved PFC designs
JEDEC-qualified reliability	Validated per J-STD-20/JESD22 for reflow soldering (MSL1, 260 °C) and long-term operation in automotive-grade environments
RoHS-compliant Pb-free plating	Meets global environmental compliance requirements without compromising solder joint integrity or thermal cycling endurance

Applications

CCM PFC in Server PSUs

Solar Inverter DC-Link Rectification

Use Scenario: Continuous Conduction Mode (CCM) boost PFC stage in 1.5–2 kW telecom/server power supplies operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Freewheeling diode in active boost switch node - conducts during MOSFET off-time and blocks reverse voltage during on-time.

Use Value: Zero Q_rr eliminates reverse recovery loss, reducing total system losses by ~0.5% and enabling smaller EMI filters due to clean current zero-crossings.

Use Scenario: Unidirectional DC-link rectification in string-level solar inverters handling 600–1000 VDC input from PV arrays.

IC Role / Device Role / Timing Role: High-voltage, high-temperature blocking diode in DC-side anti-islanding protection and MPPT bypass paths.

Use Value: Stable 600 V V_RRM rating with <1.5 µA leakage at 150 °C ensures reliable blocking under desert ambient conditions without thermal runaway.

Industrial Motor Drive Freewheeling

UPS Output Stage Rectification

Use Scenario: Freewheeling path in IGBT-based 3-phase inverter legs for HVAC compressors and pump drives operating at 10–20 kHz PWM.

IC Role / Device Role / Timing Role: Anti-parallel diode across IGBTs - clamps inductive kickback and recirculates reactive current during dead-time intervals.

Use Value: 150 A non-repetitive surge rating and 2.7 K/W R_thJC allow safe handling of motor stall currents without thermal derating or external snubbers.

Use Scenario: Output rectification in double-conversion online UPS systems converting 400 VDC battery bank to 230 VAC via H-bridge inverter.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in high-efficiency DC-AC conversion stage - conducts during low-side switch conduction phase.

Use Value: 2.1 V V_F at 5 A reduces conduction loss by 35% vs. Si FRD, increasing full-load efficiency from 94.2% to 94.8% in 5 kVA units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D05060E (Wolfspeed)	Same 600 V/5 A rating; Q_C = 5.8 nC; V_F = 2.2 V @ 5 A/25 °C; R_thJC = 2.5 K/W	Identical use in PFC and solar inverters; slightly lower thermal resistance improves margin in thermally constrained layouts	Select when board-level thermal resistance dominates system R_thJA, especially with minimal copper area
STPSC5H065 (STMicroelectronics)	650 V/5 A; Q_C = 7.2 nC; V_F = 2.35 V @ 5 A/25 °C; R_thJC = 3.0 K/W	Better voltage margin for 450 VDC bus designs; higher Q_C increases switching loss in >200 kHz PFC	Prefer for 400–450 VDC applications requiring extra overvoltage headroom, accepting minor efficiency penalty

Compared with C3D05060E and STPSC5H065, IDD05SG60CXTMA1 offers the lowest Q_C/I_F FoM among 600 V SiC diodes, optimal for high-frequency PFC, while balancing V_F and thermal resistance for mainstream industrial deployment.

Availability

IDDD05SG60CXTMA1 is available at Aetrix Electronics and suitable for CCM PFC in server PSUs, solar inverter DC-link rectification, industrial motor drive freewheeling, and UPS output stage rectification requiring stable component supply and long-term production continuity.

Supply support for IDD05SG60CXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in SiC and GaN device development since 2010.

This part belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature, high-frequency power conversion in industrial and renewable energy systems.

FAQ

What is the maximum allowable junction temperature for IDD05SG60CXTMA1?

The absolute maximum junction temperature is 175 °C, validated across all electrical parameters including V_F, I_R, and Q_C. Operation at this limit requires strict thermal design with R_thJC ≤ 2.7 K/W and adequate PCB copper area or heatsink interface to maintain T_j within specification under full load.

Does IDD05SG60CXTMA1 require a gate resistor or driver circuit?

No - as a passive Schottky diode, IDD05SG60CXTMA1 has no gate terminal and requires no drive circuitry. It operates solely based on applied voltage polarity and current direction; only proper thermal and layout design (e.g., low-inductance cathode routing) is needed to preserve its zero-recovery advantage.

How does the absence of reverse recovery affect EMI in PFC designs?

Eliminating reverse recovery removes high di/dt current spikes and associated broadband noise above 30 MHz. This reduces common-mode EMI, relaxes filter requirements, and lowers radiated emissions - verified in 100–300 kHz totem-pole PFC prototypes where measured conducted EMI passed CISPR-32 Class B with 8 dB margin.

Can IDD05SG60CXTMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of forward voltage (V_F increases with T_j) enables natural current sharing. Parallel operation requires matched layout symmetry, identical thermal paths, and <5% V_F binning; tested configurations up to four devices in parallel show <8% current imbalance at 20 A total load and 150 °C case temperature.

IDD05SG60CXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 5A

Voltage - Forward (Vf) (Max) @ If:: 2.3 V @ 5 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 30 µA @ 600 V

Capacitance @ Vr, F:: 110pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

Operating Temperature - Junction:: -55°C ~ 175°C

IDD05SG60CXTMA1 FAQ

1.How can I place an order for IDD05SG60CXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDD05SG60CXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDD05SG60CXTMA1 reliable?

The price and inventory of IDD05SG60CXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDD05SG60CXTMA1 is usually 5 days.

3.What payment methods are accepted for IDD05SG60CXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDD05SG60CXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDD05SG60CXTMA1?

IDD05SG60CXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDD05SG60CXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDD05SG60CXTMA1?

For technical support, including IDD05SG60CXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDD05SG60CXTMA1 requirements.

6.How does Aetrix verify that IDD05SG60CXTMA1 is sourced from the original manufacturer or authorized distributors?

All IDD05SG60CXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDD05SG60CXTMA1 meets industry standards.

7.What is the process for return or replacement of IDD05SG60CXTMA1?

All IDD05SG60CXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDD05SG60CXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDD05SG60CXTMA1 part is unused and in its original packaging.

Return procedure for IDD05SG60CXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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