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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDD10SG60CXTMA1

Name: IDD10SG60CXTMA1
Brand: Infineon Technologies
SKU: IDD10SG60CXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDD10SG60CXTMA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IDD10SG60CXTMA1.pdf

Description:: DIODE SIL CARB 600V 10A TO252-3

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Product details

Overview

IDD10SG60CXTMA1 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage, 10 A continuous forward current at T_C < 130 °C, and featuring zero reverse recovery charge (Q_C = 16 nC), 1.25 K/W junction-to-case thermal resistance, and operation up to 175 °C junction temperature - deployed in CCM PFC stages of high-efficiency SMPS.

For engineers reviewing the IDD10SG60CXTMA1 datasheet, IDD10SG60CXTMA1 pinout, IDD10SG60CXTMA1 application, or IDD10SG60CXTMA1 equivalent, key selection criteria include its SiC-based zero-recovery switching behavior, temperature-independent V_F drift (1.8–2.2 V across 25–150 °C), low capacitive charge, high dv/dt ruggedness (50 V/ns), and PG-TO252-3 package compatibility with high-power SMD thermal management.

Technical Context

This SiC Schottky diode eliminates minority-carrier injection, resulting in no reverse recovery time (t_rr) or forward recovery transient - enabling clean, predictable switching in hard-commutated topologies. Its capacitive displacement current time constant (t_c < 10 ns) is independent of junction temperature, load current, and di/dt.

Designed for high-temperature reliability, it sustains 10 A DC conduction at T_C = 130 °C with 1.25 K/W R_thJC, and delivers 410 A non-repetitive surge capability (t_p = 10 µs) under 25 °C case conditions - critical for motor drive IGBT freewheeling and solar inverter DC-link protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - supports 400 V DC-link systems with 50% safety margin for voltage transients in solar inverters and UPS.
I_F (cont.)	10 A at T_C < 130 °C - enables compact heatsink design in space-constrained PFC modules without forced air.
Q_C	16 nC - reduces switching losses in high-frequency (>100 kHz) totem-pole PFC by eliminating tail current and associated EMI.
R_thJC	1.25 K/W - allows direct thermal coupling to copper pour on FR4 PCB, supporting >100 W power dissipation without baseplate.
V_F @ 10 A	1.8–2.2 V (25–150 °C) - stable forward drop ensures predictable conduction loss across full industrial temperature range.
dv/dt ruggedness	50 V/ns - withstands fast voltage transients in IGBT-based motor drives without spurious turn-on or failure.
t_c	<10 ns - defines capacitive discharge timing for accurate gate driver timing budgeting in synchronous rectifier control.

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Pin 1: n.c., Pin 2: Anode (A), Pin 3: Cathode (C).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	No connection	Electrically isolated terminal; must not be soldered or tied to any net to avoid parasitic coupling or thermal short.
Pin 2	Anode	Forward current entry point; connects to low-side switch node in buck-derived topologies or AC input in bridge rectifiers.
Pin 3	Cathode	High-current return path; ties directly to PCB copper pour for minimal inductance and optimal thermal transfer to heatsink plane.

Key Features

Feature	Design Value
Zero reverse recovery charge	Eliminates switching loss and EMI from minority-carrier tail current, enabling >200 kHz PFC operation without snubbers.
Temperature-stable V_F	Forward voltage shift < 0.4 V from 25 °C to 150 °C - simplifies thermal derating and improves system efficiency predictability.
High surge robustness	410 A non-repetitive peak forward current (10 µs) - withstands inrush and fault currents in UPS and motor drive freewheel paths.
Low Q_C/I_F figure of merit	1.6 nC/A - benchmark SiC performance for high-frequency, high-efficiency rectification in next-gen power supplies.
Pb-free & RoHS compliant	Meets global environmental compliance requirements without compromising thermal or electrical performance in reflow-soldered assemblies.

Applications

CCM PFC in Server PSUs

Solar Inverter DC-Link Clamp

Use Scenario: Continuous Conduction Mode (CCM) boost PFC stage operating at 100–300 kHz in 1–3 kW server power supplies.

IC Role / Device Role / Timing Role: High-frequency output rectifier replacing Si diodes to eliminate reverse recovery loss and reduce MOSFET switching stress.

Use Value: Enables >98% PFC efficiency at full load while reducing heatsink size by 35% due to lower conduction + switching loss.

Use Scenario: DC-link voltage clamping and freewheeling path in three-phase string inverters handling 600–1000 V DC input.

IC Role / Device Role / Timing Role: Bidirectional clamp diode in active NPC or T-type inverter topologies, conducting during shoot-through prevention and regeneration.

Use Value: Withstands 50 V/ns dv/dt transients without false triggering and maintains <1 µA leakage at 600 V/150 °C for long-term reliability.

Industrial Motor Drive Freewheel

UPS Output Rectification

Use Scenario: Freewheeling path across IGBTs in 7.5–15 kW variable-frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: Fast-decay path for inductive motor current during IGBT turn-off, minimizing voltage overshoot and snubber losses.

Use Value: Delivers 44 A surge current at 150 °C case temperature, enabling 150% overload capability for 10 ms without thermal runaway.

Use Scenario: Output-stage synchronous rectification in double-conversion online UPS systems with 400 V DC bus.

IC Role / Device Role / Timing Role: Low-loss output diode in phase-shifted full-bridge or LLC resonant converter secondary side.

Use Value: Reduces conduction loss by 40% vs. Si Schottky at 10 A/100 °C, improving full-load efficiency from 93% to 94.8%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D10065A	650 V rating, 10 A, 1.75 K/W R_thJC, TO-220AC package	Requires through-hole mounting and larger heatsink; higher thermal resistance limits high-density layout	Prefer when legacy TO-220 footprint or higher voltage margin is required over SMD integration.
STPSC10H065D	650 V, 10 A, 1.4 K/W R_thJC, D²PAK package, Q_C = 18 nC	Slightly higher capacitive charge and larger footprint than PG-TO252-3; same thermal performance ceiling	Select if STMicroelectronics supply chain alignment or dual-sourcing with tighter V_F tolerance (1.7–2.0 V) is prioritized.

Compared with C3D10065A and STPSC10H065D, IDD10SG60CXTMA1 offers the lowest R_thJC (1.25 K/W) and smallest SMD footprint (PG-TO252-3), making it optimal for thermally dense, high-frequency PFC and inverter designs where board area and thermal resistance are critical constraints.

Availability

IDD10SG60CXTMA1 is available at Aetrix Electronics and suitable for CCM PFC in server PSUs, solar inverter DC-link clamp, industrial motor drive freewheel, and UPS output rectification requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for IDD10SG60CXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.

IDD10SG60CXTMA1 belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature, high-frequency power conversion in next-generation SMPS, solar inverters, and motor drives.

FAQ

What is the maximum allowable junction temperature for IDD10SG60CXTMA1?

The absolute maximum junction temperature (T_j) is 175 °C, validated per JEDEC standards. Operation at this limit requires strict thermal design - including PCB copper area ≥6 cm², minimal thermal interface resistance, and ambient temperature ≤55 °C - to maintain reliability over lifetime.

Does IDD10SG60CXTMA1 require a gate resistor or snubber network?

No. As a unipolar Schottky diode with no minority carriers, it exhibits no reverse recovery and requires no snubber. However, a small RC network (e.g., 10 Ω + 100 pF) across anode-cathode may be used for EMI suppression in ultra-high-dv/dt environments (>30 V/ns) near sensitive analog circuitry.

Can IDD10SG60CXTMA1 replace a silicon fast recovery diode in an existing design?

Yes, but only after verifying layout thermal capacity and gate driver immunity. Its lower V_F and zero t_rr reduce losses, yet faster switching increases di/dt-induced noise - requiring updated PCB grounding, shorter traces, and possible gate resistor adjustment on adjacent switches to prevent false triggering.

What is the meaning of "thinQ!™" in the product name?

thinQ!™ is Infineon's trademark for its family of optimized SiC Schottky diodes emphasizing quantum-level charge control (Q_C), thermal resilience, and high-frequency switching fidelity. It denotes third-generation process refinement focused on minimizing Q_C/I_F ratio and enhancing surge robustness without sacrificing voltage rating.

IDD10SG60CXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 10A

Voltage - Forward (Vf) (Max) @ If:: 2.1 V @ 10 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 90 µA @ 600 V

Capacitance @ Vr, F:: 290pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

Operating Temperature - Junction:: -55°C ~ 175°C

IDD10SG60CXTMA1 FAQ

1.How can I place an order for IDD10SG60CXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDD10SG60CXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDD10SG60CXTMA1 reliable?

The price and inventory of IDD10SG60CXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDD10SG60CXTMA1 is usually 5 days.

3.What payment methods are accepted for IDD10SG60CXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDD10SG60CXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDD10SG60CXTMA1?

IDD10SG60CXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDD10SG60CXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDD10SG60CXTMA1?

For technical support, including IDD10SG60CXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDD10SG60CXTMA1 requirements.

6.How does Aetrix verify that IDD10SG60CXTMA1 is sourced from the original manufacturer or authorized distributors?

All IDD10SG60CXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDD10SG60CXTMA1 meets industry standards.

7.What is the process for return or replacement of IDD10SG60CXTMA1?

All IDD10SG60CXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDD10SG60CXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDD10SG60CXTMA1 part is unused and in its original packaging.

Return procedure for IDD10SG60CXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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