Infineon Technologies IDD10SG60CXTMA2

Overview

IDD10SG60CXTMA2 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide Schottky diode rated for 600 V repetitive peak reverse voltage, 10 A continuous forward current at T_C < 130 °C, and 1.8–2.1 V forward voltage at 10 A and 25 °C. It operates junction-temperature up to 175 °C and delivers zero reverse recovery charge (Q_c = 16 nC), enabling high-efficiency PFC stages in CCM-mode SMPS.

For engineers reviewing the IDD10SG60CXTMA2 datasheet, IDD10SG60CXTMA2 pinout, IDD10SG60CXTMA2 application, or IDD10SG60CXTMA2 equivalent, key selection criteria include its SiC-based temperature-independent switching, 50 V/ns dv/dt ruggedness, surge capability (I_F,max = 410 A), thermal resistance (R_thJC = 1.25 K/W), and PG-TO252-3 package compatibility with high-power SMD layouts.

Technical Context

This SiC Schottky diode eliminates minority-carrier injection, resulting in no reverse recovery time (t_rr) and no forward recovery-only capacitive displacement current with t_c < 10 ns. Its Q_c–di_F/dt relationship is linear and temperature-stable across –55 °C to 175 °C.

Designed for hard-switched topologies, it sustains 600 V blocking with <90 µA reverse leakage at 25 °C and <860 µA at 150 °C, while maintaining low capacitance (40 pF at 600 V, 1 MHz) and stored energy (E_C = 8 µJ at 600 V).

Key Specifications

Pinout & Package

Delivered in PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. Pin 1: n.c., Pin 2: Anode (A), Pin 3: Cathode (C). The package complies with MSL1 reflow profile (260 °C peak) and RoHS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10060A, IDD10SG60CXTMA2 offers lower thermal resistance and smaller footprint; versus SS10P6, it delivers 40 % lower conduction loss and eliminates reverse recovery entirely-critical for >30 kHz operation and thermal margin in enclosed systems.

Availability

ID D10SG60CXTMA2 is available at Aetrix Electronics and suitable for AC-DC PFC modules, solar string inverters, industrial UPS systems, and motor drive inverters requiring stable component supply, JEDEC-qualified reliability, and high-temperature SiC performance.

Supply support for IDD10SG60CXTMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing infrastructure.

This device belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-frequency, high-efficiency power conversion where zero-recovery behavior and thermal robustness are mandatory.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IDD10SG60CXTMA2 supports continuous forward current of 10 A only when case temperature remains below 130 °C. At 150 °C case temperature, the rated continuous current drops to 8.8 A per derating curve on page 3 of the datasheet. Exceeding 130 °C continuously violates the specified I_F rating and risks accelerated parametric drift.

Does this diode require a gate resistor or snubber network?

No gate resistor is needed-it is a passive diode. However, a small RC snubber (e.g., 10 Ω + 100 pF) across anode–cathode is recommended in high-di/dt applications (>100 A/µs) to damp ringing caused by stray inductance interacting with its 40 pF capacitance at 600 V. This improves EMI and reduces voltage overshoot.

Can IDD10SG60CXTMA2 replace a standard silicon fast recovery diode in an existing design?

Yes, but layout and thermal validation are required. Its lower V_F reduces conduction loss, but its faster switching demands tighter control of PCB parasitics. Also, verify that the existing gate driver can handle the higher di/dt-induced voltage spikes due to absence of reverse recovery damping.

Is the PG-TO252-3 package lead-free and RoHS-compliant?

Yes. The IDD10SG60CXTMA2 uses Pb-free lead plating and is fully RoHS-compliant per EU Directive 2011/65/EU. It meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), allowing unlimited floor life and standard reflow profiles up to 260 °C peak temperature.