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Infineon Technologies IDD12SG60CXTMA1
- Part No.:
- IDD12SG60CXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IDD12SG60CXTMA1.pdf
- Description:
- DIODE SIL CARB 600V 12A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,593
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Product details
Overview
IDD12SG60CXTMA1 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 12 A continuous forward current at TC < 130 °C, with zero reverse recovery charge and <10 ns capacitive switching time-designed for high-efficiency CCM PFC stages in industrial SMPS.
For engineers reviewing the IDD12SG60CXTMA1 datasheet, IDD12SG60CXTMA1 pinout, IDD12SG60CXTMA1 application, or IDD12SG60CXTMA1 equivalent, key selection criteria include its 1.2 K/W junction-to-case thermal resistance, 19 nC total capacitive charge, temperature-independent switching behavior, and PG-TO252-3 package compatibility with high-power SMD layouts.
Technical Context
This SiC Schottky diode eliminates minority-carrier injection, resulting in no reverse recovery time (trr) and no forward recovery loss-enabling operation up to 175 °C junction temperature with stable VF drift (1.8–2.2 V at 12 A). Its dv/dt ruggedness of 50 V/ns supports robust commutation in hard-switched topologies.
The device uses a planar SiC junction structure with optimized edge termination, delivering a Figure of Merit (QC/IF) among the lowest in its class. Capacitance is voltage-dependent (310 pF at 1 V, 50 pF at 600 V), enabling predictable snubber design across wide DC-link ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - supports 400 V nominal DC-link systems with 50% margin for transients in solar inverters and UPS |
| IF (cont.) | 12 A at TC < 130 °C - enables compact heatsinking in space-constrained 3–5 kW PFC modules |
| QC | 19 nC - reduces turn-off losses in interleaved totem-pole PFC when switching at 100–300 kHz |
| RthJC | 1.2 K/W - allows direct thermal coupling to copper pour on FR4 PCBs without baseplate |
| tc | <10 ns - defines capacitive displacement current duration; independent of temperature and load current |
| VF @ 12 A | 1.8–2.2 V (25–150 °C) - low conduction loss with minimal thermal runaway risk in parallel configurations |
| IR @ 600 V | 4 µA @ 150 °C - negligible leakage during high-temperature hold conditions in motor drives |
Pinout & Package
Package: PG-TO252-3 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Pin 1: n.c., Pin 2: Anode (A), Pin 3: Cathode (C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | No connection | Electrically isolated; no internal bond wire or die attachment-must remain unconnected in layout |
| Pin 2 | Anode | Main current entry point; bonded to SiC epitaxial layer; requires low-inductance trace routing |
| Pin 3 | Cathode | Exposed metal pad (drain-side thermal path); serves as primary heat sink interface and return path |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery | Eliminates trr-related switching loss and EMI in high-frequency PFC, enabling >200 kHz operation |
| Temperature-independent switching | Capacitive switching time tc remains stable from –55 °C to 175 °C-no derating needed for thermal cycling |
| High surge capability | 59 A non-repetitive surge (10 ms, TC=25 °C) supports inrush current handling in AC/DC front-ends |
| Low QC/IF FoM | 1.58 nC/A - benchmark efficiency metric for SiC diodes; improves system power density vs. Si alternatives |
| JEDEC-qualified reliability | Qualified per J-STD-20/JESD22 for reflow and mechanical stress-validated for automotive-grade production use |
Applications
| Industrial SMPS CCM PFC | Solar String Inverters |
|---|---|
Use Scenario: Continuous Conduction Mode (CCM) boost PFC stage in 3.3–5 kW server PSUs and telecom rectifiers. IC Role / Device Role / Timing Role: Unidirectional freewheeling diode in active boost switch node; handles full line-frequency input current with high-frequency switching. Use Value: Enables >98.5% efficiency at 230 VAC input by eliminating reverse recovery loss and reducing snubber energy. | Use Scenario: DC-link clamping and freewheeling in dual-stage string inverters with 600–1000 V DC bus. IC Role / Device Role / Timing Role: High-voltage output rectifier in MPPT boost stage; blocks reverse current during partial shading events. Use Value: Withstands 150 °C ambient with <4 µA leakage, preserving MPPT accuracy and reducing thermal derating. |
| UPS Output Stage | Industrial Motor Drives |
Use Scenario: Bidirectional IGBT anti-parallel path in online double-conversion UPS inverters (400 VAC output). IC Role / Device Role / Timing Role: Low-loss freewheeling path during IGBT turn-off; recirculates reactive current in LC filter. Use Value: Reduces inverter bridge conduction loss by 1.2 W per phase vs. Si fast recovery diodes at 10 kHz PWM. | Use Scenario: Brake chopper and regenerative feedback path in 7.5–15 kW variable frequency drives. IC Role / Device Role / Timing Role: Snubberless energy dissipation path during dynamic braking; absorbs regenerated inductive energy. Use Value: Supports 430 A non-repetitive surge (10 µs) without degradation-enables compact brake resistor sizing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D10060A | 10 A rating, same 600 V VRRM, higher RthJC (1.5 K/W), 17 nC QC | Lower current handling limits use in ≤3 kW designs; tighter thermal margin on small PCBs | Select for cost-sensitive 2–3 kW PFC where 10 A suffices and footprint matches |
| STPSC1206D | 12 A rating, 600 V VRRM, 2.1 V VF @ 12 A/25 °C, 22 nC QC, RthJC = 1.3 K/W | Higher conduction loss increases thermal load at full load; slightly slower capacitance discharge | Prefer when legacy ST design reuse is required and minor efficiency trade-off is acceptable |
Compared with C3D10060A and STPSC1206D, IDD12SG60CXTMA1 delivers superior thermal performance (1.2 K/W), lowest QC/IF ratio, and JEDEC-qualified reliability-making it optimal for high-density, high-temperature industrial PFC and solar applications demanding long-term stability.
Availability
ID D12SG60CXTMA1 is available at Aetrix Electronics and suitable for industrial SMPS CCM PFC, solar string inverters, and UPS output stages requiring stable component supply, high-temperature reliability, and zero-recovery switching performance.
Supply support for IDD12SG60CXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
ID D12SG60CXTMA1 belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature, high-frequency power conversion in next-generation energy infrastructure.
FAQ
What is the maximum allowable junction temperature for IDD12SG60CXTMA1?
The absolute maximum junction temperature is 175 °C, validated across all electrical parameters in the datasheet. Operation at this limit requires strict thermal management-RthJC of 1.2 K/W must be achieved via proper PCB copper area (≥6 cm²) and minimal interfacial thermal resistance. Derating curves confirm 12 A continuous current is sustainable only if case temperature stays below 130 °C.
Does IDD12SG60CXTMA1 require a gate driver or external control circuitry?
No. IDD12SG60CXTMA1 is an uncontrolled two-terminal power diode with no gate terminal. It operates passively as a unidirectional current valve-forward conduction occurs when anode voltage exceeds cathode by ≥1.8 V, and blocking occurs automatically above 600 V reverse bias. No driver, biasing, or timing signals are needed.
Can IDD12SG60CXTMA1 be paralleled for higher current capacity?
Yes-its positive temperature coefficient of forward voltage (VF increases with Tj) enables inherently stable current sharing. However, layout symmetry is critical: matched trace inductance/resistance, identical thermal paths, and shared copper pour are mandatory. Parallel operation beyond 24 A is not characterized in the datasheet and requires empirical validation under worst-case thermal and dynamic load conditions.
Is IDD12SG60CXTMA1 suitable for automotive under-hood applications?
While qualified per JEDEC standards for reflow and mechanical stress, IDD12SG60CXTMA1 is not AEC-Q101 qualified. Infineon explicitly restricts use in automotive, aviation, or life-support systems without written approval. For under-hood applications, AEC-Q101-compliant variants like IDH12SG60C must be selected instead.
IDD12SG60CXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 12A
- Voltage - Forward (Vf) (Max) @ If:
- 2.1 V @ 12 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 100 µA @ 600 V
- Capacitance @ Vr, F:
- 310pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDD12SG60CXTMA1 FAQ
1.How can I place an order for IDD12SG60CXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDD12SG60CXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDD12SG60CXTMA1 reliable?
The price and inventory of IDD12SG60CXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDD12SG60CXTMA1 is usually 5 days.
3.What payment methods are accepted for IDD12SG60CXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDD12SG60CXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDD12SG60CXTMA1?
IDD12SG60CXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDD12SG60CXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDD12SG60CXTMA1?
For technical support, including IDD12SG60CXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDD12SG60CXTMA1 requirements.
6.How does Aetrix verify that IDD12SG60CXTMA1 is sourced from the original manufacturer or authorized distributors?
All IDD12SG60CXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDD12SG60CXTMA1 meets industry standards.
7.What is the process for return or replacement of IDD12SG60CXTMA1?
All IDD12SG60CXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDD12SG60CXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDD12SG60CXTMA1 part is unused and in its original packaging.
Return procedure for IDD12SG60CXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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