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Infineon Technologies IDDD08G65C6XTMA1
- Part No.:
- IDDD08G65C6XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- 10-PowerSOP Module
- Datasheet:
-
IDDD08G65C6XTMA1.pdf
- Description:
- DIODE SIL CARB 650V 24A HDSOP-10
- Quantity:
- Payment:
- Shipping:
Inventory:1,875
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Product details
Overview
IDDD08G65C6XTMA1 from Infineon is a 650 V, 8 A silicon carbide Schottky diode in PG-HDSOP-10-1 package, featuring 1.25 V forward voltage at 8 A and 25 °C, 12.2 nC capacitive charge at 400 V, and 150 V/ns dv/dt ruggedness. It serves as a high-efficiency freewheeling or output rectifier in high-frequency PFC stages and solar inverters.
For engineers reviewing the IDDD08G65C6XTMA1 datasheet, IDDD08G65C6XTMA1 pinout, IDDD08G65C6XTMA1 application, or IDDD08G65C6XTMA1 equivalent, key selection criteria include SiC-specific reverse recovery performance, thermal resistance (RthJC = 1.0–1.6 K/W), junction temperature range (−55 to +175 °C), and industrial qualification per JEDEC J-STD-20/JESD22.
Technical Context
This 6th-generation CoolSiC™ diode uses an enhanced Schottky metal system to reduce Qc × VF figure of merit versus prior generations. Its zero reverse recovery charge enables hard-switched operation without tail current, eliminating snubber losses in totem-pole PFC and DC-DC converters.
The device operates with no minority carrier storage, delivering stable switching behavior across −55 °C to +175 °C. Its 150 V/ns dv/dt rating ensures robustness against parasitic turn-on in high-speed half-bridge configurations with fast gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse voltage; defines safe blocking capability in 600 V bus applications. |
| IF (TC ≤ 150 °C) | 8 A - Continuous forward current at case temperature ≤150 °C; sets thermal design margin for heatsink sizing. |
| VF (IF = 8 A, Tj = 25 °C) | 1.25 V - Low conduction loss enabling >99% efficiency in high-frequency PFC stages. |
| Qc (VR = 400 V) | 12.2 nC - Capacitive charge determining switching loss during turn-off; critical for EMI and loss calculation. |
| dv/dt Ruggedness | 150 V/ns - Immunity to false triggering under rapid voltage transients; supports 100+ kHz operation in LLC resonant converters. |
| RthJC | 1.0–1.6 K/W - Junction-to-case thermal resistance; enables direct thermal interface to heatsink without thermal pad derating. |
| Tj Operating Range | −55 to +175 °C - Full industrial temperature coverage; supports uncooled operation in UPS and solar string inverters. |
Pinout & Package
Package: PG-HDSOP-10-1 - 10-pin surface-mount package with exposed cathode thermal pad, optimized for low-inductance layout and high-power density mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pins 1–2 | No connection | Electrically isolated; must remain unconnected to avoid parasitic coupling or mechanical stress. |
| Pins 3–5 | Anode | Parallel-connected terminals for low-inductance, high-current anode routing in multi-phase PFC designs. |
| Pins 6–10 | Cathode | Multi-terminal cathode with integrated thermal pad; provides primary current path and thermal conduction to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| Lowest VF in 650 V SiC diode class | 1.25 V @ 8 A, 25 °C - Reduces conduction loss by ≥15% vs. competing SiC diodes, directly improving system efficiency. |
| Optimized Qc × VF figure of merit | Measured product of capacitive charge and forward voltage - Enables best-in-class trade-off between switching and conduction losses. |
| High dv/dt immunity | 150 V/ns - Eliminates need for external dv/dt snubbers in high-side switch node applications. |
| JEDEC-qualified industrial reliability | Validated per J-STD-20 (reflow) and JESD22 (HTOL, TC, HAST) - Ensures long-term stability in 10+ year field deployments. |
Applications
| Power Factor Correction (PFC) | Solar Inverter DC-AC Stage |
|---|---|
Use Scenario: Totem-pole PFC in 3.3 kW server PSU with 100 kHz switching frequency. IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing MOSFET body diode; conducts during dead-time intervals. Use Value: Zero reverse recovery eliminates shoot-through risk and reduces EMI filtering requirements by 30%. | Use Scenario: String-level DC-AC conversion in 15 kW residential solar inverter using three-level NPC topology. IC Role / Device Role / Timing Role: Freewheeling diode in IGBT-based inverter leg; clamps inductive energy during commutation. Use Value: 175 °C max junction temperature allows derating-free operation at ambient up to 70 °C without forced air cooling. |
| Uninterruptible Power Supply (UPS) | Industrial Motor Drive Output Stage |
Use Scenario: Online double-conversion UPS with bidirectional AC-DC/DC-AC stages operating at 50 kHz. IC Role / Device Role / Timing Role: Output rectifier in high-frequency isolation transformer secondary side. Use Value: 12.2 nC Qc enables <1.5 µs turn-off time, supporting soft-switching control schemes with minimal dead-time penalty. | Use Scenario: Regenerative braking circuit in 7.5 kW servo drive with 20 kHz PWM carrier. IC Role / Device Role / Timing Role: Anti-parallel diode across IGBT in inverter leg; recirculates reactive current during modulation. Use Value: 1.0–1.6 K/W RthJC allows direct mounting to aluminum baseplate, reducing thermal interface layers and system footprint by 22%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D08065E (Wolfspeed) | Higher VF (1.45 V @ 8 A), same VRRM and package; 13.5 nC Qc | Lower efficiency in conduction-dominated PFC; requires larger heatsink at full load | Select when legacy design compatibility with C3D series is required and thermal margin exists. |
| STPSC8H065DL (STMicroelectronics) | 1.35 V VF @ 8 A, 11.8 nC Qc, same PG-HDSOP-10-1 footprint | Better switching loss but higher conduction loss; slightly lower dv/dt rating (120 V/ns) | Prefer for high-frequency, light-load dominant applications where Qc dominates total loss. |
Compared with C3D08065E and STPSC8H065DL, IDDD08G65C6XTMA1 delivers the lowest VF and best Qc×VF balance, making it optimal for thermally constrained, high-efficiency PFC and solar inverter designs where both conduction and switching losses must be minimized simultaneously.
Availability
IDDD08G65C6XTMA1 is available at Aetrix Electronics and suitable for power factor correction in SMPS, solar inverter DC-AC conversion, and uninterruptible power supply systems requiring stable component supply and industrial-grade reliability.
Supply support for IDDD08G65C6XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDDD08G65C6XTMA1 belongs to the CoolSiC™ 6th Generation family, engineered specifically for high-efficiency, high-frequency power conversion in industrial and solar applications where SiC's zero-recovery advantage delivers measurable system-level gains.
FAQ
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies IF = 8 A at TC ≤ 150 °C with duty cycle D = 1. At TC = 125 °C, continuous current rises to 13 A; at TC = 25 °C, it reaches 24 A. Thermal design must ensure case temperature remains within these limits under worst-case ambient and airflow conditions.
Does this diode require a gate resistor or driver circuit?
No - IDDD08G65C6XTMA1 is a passive Schottky diode with no gate terminal. It operates solely on forward bias and reverse voltage; no external drive or gate control is needed. Its behavior is defined entirely by VF, Qc, and dv/dt characteristics.
Can this part replace a silicon fast recovery diode in an existing design?
Yes, but layout and thermal analysis must be updated. The lower VF reduces conduction loss, while zero Qrr eliminates snubber circuits. However, its faster switching demands careful attention to PCB parasitics and gate driver strength to avoid oscillation in half-bridge configurations.
Is the PG-HDSOP-10-1 package lead-free and RoHS compliant?
Yes - the PG-HDSOP-10-1 package meets RoHS Directive 2011/65/EU and is lead-free. Reflow soldering is permitted up to 260 °C peak temperature, consistent with IPC-J-STD-020 moisture sensitivity level MSL-3 requirements.
IDDD08G65C6XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- 10-PowerSOP Module
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 24A
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 27 µA @ 420 V
- Capacitance @ Vr, F:
- 401pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-HDSOP-10-1
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDDD08G65C6XTMA1 FAQ
1.How can I place an order for IDDD08G65C6XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDDD08G65C6XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDDD08G65C6XTMA1 reliable?
The price and inventory of IDDD08G65C6XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDDD08G65C6XTMA1 is usually 5 days.
3.What payment methods are accepted for IDDD08G65C6XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDDD08G65C6XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDDD08G65C6XTMA1?
IDDD08G65C6XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDDD08G65C6XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDDD08G65C6XTMA1?
For technical support, including IDDD08G65C6XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDDD08G65C6XTMA1 requirements.
6.How does Aetrix verify that IDDD08G65C6XTMA1 is sourced from the original manufacturer or authorized distributors?
All IDDD08G65C6XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDDD08G65C6XTMA1 meets industry standards.
7.What is the process for return or replacement of IDDD08G65C6XTMA1?
All IDDD08G65C6XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDDD08G65C6XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDDD08G65C6XTMA1 part is unused and in its original packaging.
Return procedure for IDDD08G65C6XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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