Infineon Technologies IDDD10G65C6XTMA1

Overview

IDDD10G65C6XTMA1 from Infineon is a 650 V, 10 A silicon carbide Schottky diode in PG-HDSOP-10-1 package, featuring 1.25 V forward voltage at 10 A and 14.7 nC capacitive charge at 400 V. It delivers high dv/dt ruggedness (150 V/ns) and is optimized for high-frequency PFC stages in industrial SMPS, solar inverters, and UPS systems.

For engineers reviewing the IDDD10G65C6XTMA1 datasheet, IDDD10G65C6XTMA1 pinout, IDDD10G65C6XTMA1 application, or IDDD10G65C6XTMA1 equivalent, key selection criteria include VF/Qc trade-off, thermal resistance (RthJC = 0.9–1.4 K/W), surge current capability (IF,SM = 55 A), junction temperature range (–55 to +175 °C), and PG-HDSOP-10-1 mounting compatibility with high-current cathode pads.

Technical Context

This SiC Schottky diode uses Infineon's 6th-generation CoolSiC™ technology with an enhanced Schottky metal system, enabling lower Qc × VF figure of merit versus prior generations. Its zero reverse recovery charge eliminates switching losses in hard-commutated topologies.

The device operates with no minority carrier storage, delivering stable performance across –55 °C to +175 °C junction temperatures. Its 150 V/ns dv/dt rating ensures robustness against parasitic turn-on in high-speed half-bridge configurations with fast-switching CoolMOS™ counterparts.

Key Specifications

Pinout & Package

Package: PG-HDSOP-10-1 - Surface-mount power package with exposed cathode pad (pins 6–10), isolated anode terminals (pins 3–5), and two non-connected pins (1–2). Designed for high-current, low-inductance PCB mounting with thermal via support under cathode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C4D10120A and SCT10H12A, IDDD10G65C6XTMA1 offers the lowest VF and Qc combination at 650 V, enabling highest power density in space-constrained SMD PFC modules without compromising thermal or dv/dt robustness.

Availability

IDDD10G65C6XTMA1 is available at Aetrix Electronics and suitable for power factor correction in SMPS, solar inverter DC-link stages, and uninterruptible power supply (UPS) front-ends requiring stable component supply and JEDEC-qualified industrial reliability.

Supply support for IDDD10G65C6XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDDD10G65C6XTMA1 belongs to the CoolSiC™ 6th-generation SiC Schottky diode product line, engineered specifically to replace silicon diodes in high-frequency, high-efficiency AC-DC and DC-DC conversion where low Qc × VF and high-temperature stability are critical.

FAQ

What is the maximum allowable case temperature for continuous 10 A operation?

The datasheet specifies IF = 10 A at TC ≤ 150 °C with duty cycle D = 1. At TC = 150 °C, thermal resistance RthJC reaches its max value of 1.4 K/W, requiring a heatsink or PCB copper area capable of dissipating 105 W while maintaining Tj ≤ 175 °C. Derating is required above this case temperature.

Can IDDD10G65C6XTMA1 be used as a direct replacement for silicon diodes in existing PFC designs?

Yes, but layout and gate drive adjustments are required. Its zero reverse recovery eliminates snubber circuits, yet its lower VF increases forward current ripple. The PG-HDSOP-10-1 footprint differs from TO-220 or DPAK, so PCB redesign is necessary. Thermal simulation must confirm junction temperature remains within –55 to +175 °C limits.

Does this diode require a negative gate voltage or special driving circuitry?

No - IDDD10G65C6XTMA1 is a passive Schottky diode with no gate terminal. It requires no drive circuitry. However, its cathode (pins 6–10) must be connected to a low-inductance, high-thermal-conductivity copper plane, and its anode (pins 3–5) must be routed with minimal loop area to preserve dv/dt immunity and minimize EMI.

How does the 14.7 nC capacitive charge impact EMI in high-frequency PFC designs?

The 14.7 nC Qc at 400 V directly determines turn-off energy (EC = 2.7 µJ), which shapes high-frequency spectral content during diode commutation. Combined with 150 V/ns dv/dt rating, it enables clean zero-current switching in >100 kHz interleaved PFC, reducing common-mode noise by limiting dV/dt-induced coupling into adjacent control traces.