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Infineon Technologies IDDD16G65C6XTMA1

Part No.:
IDDD16G65C6XTMA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
10-PowerSOP Module
Datasheet:
AetrixIDDD16G65C6XTMA1.pdf
Description:
DIODE SIL CARB 650V 43A HDSOP-10
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,841

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Product details

Overview

IDDD16G65C6XTMA1 from Infineon is a 650 V, 16 A silicon carbide Schottky diode in PG-HDSOP-10-1 package, featuring 1.25 V forward voltage at 16 A and 21.5 nC capacitive charge at 400 V. It delivers high dv/dt ruggedness (150 V/ns) and low figure of merit (Qc × VF), enabling high-efficiency PFC stages in industrial SMPS.

For engineers reviewing the IDDD16G65C6XTMA1 datasheet, IDDD16G65C6XTMA1 pinout, IDDD16G65C6XTMA1 application, or IDDD16G65C6XTMA1 equivalent, key selection criteria include reverse recovery performance, thermal resistance (RthJC = 0.6 K/W), surge current capability (IF,RM = 70 A), junction temperature range (–55 to 175 °C), and SMD-compatible PG-HDSOP-10-1 footprint with isolated anode/cathode terminals.

Technical Context

This SiC Schottky diode operates with zero reverse recovery charge and exhibits temperature-stable VF characteristics due to its wide-bandgap material and novel Schottky metal system. Its low Qc (21.5 nC at VR = 400 V) and low EC (4.3 µJ at VR = 400 V) directly reduce switching losses in hard-switched topologies.

The device is rated for repetitive peak reverse voltage of 650 V and supports continuous forward current up to 16 A at TC ≤ 145 °C. Its 150 V/ns dv/dt ruggedness ensures robust operation in fast-switching converters without snubbers.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM650 V - Maximum blocking voltage under repetitive conditions; defines usable DC bus voltage headroom in PFC and inverter designs.
IF (TC ≤ 145 °C)16 A - Continuous forward current rating at case temperature 145 °C; sets thermal design baseline for heatsink sizing.
VF (IF = 16 A, Tj = 25 °C)1.25 V - Low conduction loss at rated current; reduces I²R losses and improves full-load efficiency.
Qc (VR = 400 V)21.5 nC - Low capacitive charge minimizes turn-off energy loss in high-frequency switching applications.
dv/dt Ruggedness150 V/ns - Enables reliable operation in fast-switching circuits without oscillation or false triggering.
RthJC0.6 K/W - Low junction-to-case thermal resistance allows efficient heat transfer to heatsink or PCB copper.
IR (VR = 420 V, Tj = 150 °C)123 µA - Low leakage at high temperature and voltage preserves system standby efficiency and reliability.

Pinout & Package

Package: PG-HDSOP-10-1 - 10-pin surface-mount package with exposed cathode pad for enhanced thermal performance and isolation between anode and cathode terminals.

Pin/TerminalCircuit RoleDesign Meaning
Pins 1–2No-connect (n.c.)Unused terminals; must remain unconnected per datasheet to avoid parasitic coupling or thermal imbalance.
Pins 3–5AnodePrimary current entry point; electrically and thermally isolated from cathode side for layout flexibility.
Pins 6–10CathodeCurrent exit path with large-area exposed copper pad; serves as primary thermal interface to PCB heatsinking.

Key Features

FeatureDesign Value
Low forward voltage1.25 V at 16 A and 25 °C - Reduces conduction loss by ~20% vs. comparable 3rd-gen SiC diodes, improving light-load efficiency.
Optimized figure of meritQc × VF = 26.9 nC·V - Lower than prior generations, enabling higher frequency operation without efficiency penalty.
High dv/dt immunity150 V/ns - Eliminates need for gate resistors or RC snubbers in fast-switching GaN/SiC half-bridges.
JEDEC-qualified reliabilityQualified per J-STD-20 and JESD22 - Validated for industrial temperature cycling, humidity, and solderability per standard test protocols.

Applications

Power Factor Correction (PFC)Solar Inverter DC-Link

Use Scenario: Boost PFC stage in 3–5 kW telecom rectifiers operating at 100–300 kHz switching frequency.

IC Role / Device Role / Timing Role: Freewheeling diode in continuous conduction mode (CCM) boost converter; handles bidirectional current during switching transitions.

Use Value: 1.25 V VF and 21.5 nC Qc reduce total power loss by 1.8 W vs. legacy SiC diodes, lowering heatsink requirements by 35%.

Use Scenario: DC-link freewheeling path in string inverters with 1000 V DC input and 50 kHz PWM modulation.

IC Role / Device Role / Timing Role: Anti-parallel diode across IGBTs or SiC MOSFETs; clamps inductive kickback during dead-time intervals.

Use Value: 150 V/ns dv/dt ruggedness prevents false turn-on in high-di/dt environments, eliminating need for external snubbers.

Uninterruptible Power Supply (UPS)Industrial Motor Drive Rectifier

Use Scenario: High-efficiency AC/DC front-end in double-conversion UPS systems with 96% target efficiency at full load.

IC Role / Device Role / Timing Role: Output rectifier in phase-shifted full-bridge topology; conducts during synchronous rectification windows.

Use Value: 123 µA IR at 150 °C and 420 V maintains <0.5 W standby loss, meeting Energy Star Level VI requirements.

Use Scenario: Input rectifier bridge in 7.5 kW servo drive with 400 V AC input and 150 °C ambient enclosure.

IC Role / Device Role / Timing Role: Fast-recovery diode in 6-pulse rectifier feeding active front-end; sustains 70 A surge current for 10 ms.

Use Value: 70 A IF,RM rating and 0.6 K/W RthJC allow direct mounting on aluminum baseplate, reducing thermal interface layers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D16065E (Wolfspeed)Same 650 V/16 A rating; VF = 1.35 V (typ.), Qc = 24.5 nC at 400 V; TO-247-2L package.Higher thermal resistance (RthJC = 0.9 K/W); requires bolt-down heatsink vs. SMD mounting.Select when mechanical mounting constraints favor through-hole or higher surge margin is needed.
STPSC16H065D (STMicroelectronics)VF = 1.45 V (typ.), Qc = 26.0 nC at 400 V; same PG-HDSOP-10-1 package but lower dv/dt rating (100 V/ns).Limited dv/dt immunity increases risk of false triggering in >200 kHz GaN-based PFC.Select only for cost-sensitive industrial SMPS where switching frequency remains ≤150 kHz.

Compared with C3D16065E and STPSC16H065D, IDDD16G65C6XTMA1 offers the lowest VF/Qc combination and highest dv/dt ruggedness in SMD form factor-enabling smaller heatsinks, higher frequency operation, and simplified EMI filtering in space-constrained PFC modules.

Availability

IDDD16G65C6XTMA1 is available at Aetrix Electronics and suitable for power factor correction, solar inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply and long-term industrial qualification.

Supply support for IDDD16G65C6XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDDD16G65C6XTMA1 belongs to the CoolSiC™ 6th Generation family, engineered specifically for high-efficiency, high-frequency switching applications where low conduction and switching losses are critical-especially in next-generation PFC and DC-DC converters.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IDDD16G65C6XTMA1 supports continuous forward current of 16 A at case temperature (TC) ≤ 145 °C with duty cycle D = 1. At TC = 125 °C, it can handle up to 23 A; at TC = 25 °C, the limit rises to 43 A. Derating curves are provided in Figure 2 of the datasheet.

Does this diode require a gate resistor or snubber circuit?

No. The IDDD16G65C6XTMA1 has no gate terminal and exhibits zero reverse recovery charge. Its 150 V/ns dv/dt ruggedness eliminates the need for snubbers in typical 650 V hard-switched applications, including those using GaN or SiC MOSFETs.

Can IDDD16G65C6XTMA1 replace silicon diodes in existing designs?

Yes, but layout and thermal design must be updated. Its lower VF reduces conduction loss, but its faster switching demands careful PCB layout to minimize parasitic inductance. Also, verify that existing gate drivers and controllers accommodate reduced dead-time requirements.

Is the PG-HDSOP-10-1 package lead-free and RoHS-compliant?

Yes. The IDDD16G65C6XTMA1 uses lead-free terminations and complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Reflow soldering is permitted up to 260 °C peak temperature per JEDEC J-STD-020.

IDDD16G65C6XTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
10-PowerSOP Module
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
43A
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
53 µA @ 420 V
Capacitance @ Vr, F:
783pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-HDSOP-10-1
Operating Temperature - Junction:
-55°C ~ 175°C

IDDD16G65C6XTMA1 FAQ

1.How can I place an order for IDDD16G65C6XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDDD16G65C6XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDDD16G65C6XTMA1 reliable?

The price and inventory of IDDD16G65C6XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDDD16G65C6XTMA1 is usually 5 days.

3.What payment methods are accepted for IDDD16G65C6XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDDD16G65C6XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDDD16G65C6XTMA1?

IDDD16G65C6XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDDD16G65C6XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDDD16G65C6XTMA1?

For technical support, including IDDD16G65C6XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDDD16G65C6XTMA1 requirements.

6.How does Aetrix verify that IDDD16G65C6XTMA1 is sourced from the original manufacturer or authorized distributors?

All IDDD16G65C6XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDDD16G65C6XTMA1 meets industry standards.

7.What is the process for return or replacement of IDDD16G65C6XTMA1?

All IDDD16G65C6XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDDD16G65C6XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDDD16G65C6XTMA1 part is unused and in its original packaging.

Return procedure for IDDD16G65C6XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDDD16G65C6XTMA1 Tags

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