Infineon Technologies IDDD20G65C6XTMA1

Overview

IDDD20G65C6XTMA1 from Infineon is a 650 V, 20 A silicon carbide Schottky diode in PG-HDSOP-10-1 package, featuring 1.25 V forward voltage at 20 A and 25 °C, 26.8 nC capacitive charge at 400 V, and 150 V/ns dv/dt ruggedness. It serves as a high-efficiency freewheeling or output rectifier in hard-switched and high-frequency PFC and inverter stages.

For engineers reviewing the IDDD20G65C6XTMA1 datasheet, IDDD20G65C6XTMA1 pinout, IDDD20G65C6XTMA1 application, or IDDD20G65C6XTMA1 equivalent, key selection criteria include reverse recovery performance, thermal resistance (0.5–0.9 K/W), junction-to-case layout compatibility, and industrial-grade qualification per JEDEC J-STD-20/JESD22.

Technical Context

This SiC Schottky diode eliminates reverse recovery charge and associated switching losses, enabling operation at higher frequencies than silicon counterparts. Its low Qc × VF figure of merit directly reduces conduction and switching energy loss in continuous conduction mode (CCM) PFC and DC-link applications.

The device uses Infineon's 6th-generation CoolSiC™ technology with a novel Schottky metal system, delivering stable reverse leakage (<153 µA at 420 V, 150 °C) and robust dv/dt immunity (150 V/ns) without snubbers in fast-switching topologies.

Key Specifications

Pinout & Package

Package: PG-HDSOP-10-1 - surface-mount, thermally enhanced 10-pin dual-side cooling package with exposed cathode pad for low-inductance, high-current routing and direct PCB heat sinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C4D20120D and SCT2010AW, IDDD20G65C6XTMA1 delivers the lowest combined conduction–switching loss via its 1.25 V V_F and balanced Q_c, while its 150 V/ns rating provides widest margin for unclamped hard-switching reliability.

Availability

IDDD20G65C6XTMA1 is available at Aetrix Electronics and suitable for power factor correction in SMPS, solar inverter DC-link rectification, and uninterruptible power supply (UPS) front-end conversion requiring stable component supply and long-term industrial qualification.

Supply support for IDDD20G65C6XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDDD20G65C6XTMA1 belongs to the CoolSiC™ 6th-generation SiC Schottky diode product line, engineered specifically to enable high-efficiency, high-power-density PFC, solar, and UPS systems operating at 650 V with minimal thermal and EMI overhead.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, with continuous forward current derated above 145 °C case temperature. At T_C = 125 °C, the device supports 27 A; at T_C = 100 °C, it supports 51 A. Thermal design must maintain T_j ≤ 175 °C under worst-case ambient and power dissipation conditions.

Is IDDD20G65C6XTMA1 compatible with lead-free reflow soldering processes?

Yes - the device is qualified for lead-free reflow soldering with peak temperature up to 260 °C per JEDEC J-STD-20. The PG-HDSOP-10-1 package uses matte tin plating and meets IPC/JEDEC standard moisture sensitivity level (MSL) 3, requiring bake-out only if exposed beyond floor life.

How does the dv/dt ruggedness impact gate driver design in half-bridge configurations?

With 150 V/ns rated dv/dt, the diode suppresses parasitic turn-on of high-side switches during commutation, eliminating the need for negative gate voltage or active Miller clamping in 650 V GaN/SiC half-bridges. This simplifies gate driver layout and reduces component count in high-frequency inverters.

Can this diode replace a silicon fast recovery diode in an existing 650 V design without layout changes?

Yes - the PG-HDSOP-10-1 footprint matches common 10-pin SMD packages used for high-current Si diodes. However, due to lower V_F and zero Q_rr, gate drive timing and snubber components may require adjustment to avoid overvoltage or oscillation from faster switching transitions.