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Infineon Technologies IDH02G120C5XKSA1
- Part No.:
- IDH02G120C5XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
IDH02G120C5XKSA1.pdf
- Description:
- DIODE SIL CARB 1.2KV 2A TO220-1
- Quantity:
- Payment:
- Shipping:
Inventory:1,781
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Product details
Overview
IDH02G120C5XKSA1 from Infineon Technologies is a 5th Generation CoolSiC™ 1200 V, 2 A silicon carbide Schottky diode in PG-TO220-2-1 package, featuring 14 nC total capacitive charge, 175 °C maximum junction temperature, and no reverse recovery current-designed for high-efficiency power conversion in solar inverters and industrial motor drives.
For engineers reviewing the IDH02G120C5XKSA1 datasheet, IDH02G120C5XKSA1 pinout, IDH02G120C5XKSA1 application, or IDH02G120C5XKSA1 equivalent, key selection criteria include its 1200 V repetitive peak reverse voltage, temperature-independent switching, tight VF distribution (1.4–1.65 V at 2 A/25 °C), dv/dt ruggedness (150 V/ns), and qualified JEDEC reliability for harsh industrial environments.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-voltage DC-link applications, eliminating reverse recovery losses and enabling >100 kHz switching without commutation loss penalties. Its unipolar conduction mechanism ensures zero Qrr and stable VF across –55 °C to 175 °C operating range.
The device uses planar SiC die with optimized edge termination for 1200 V blocking capability and exhibits low Rth(j-c) of 1.54–2 K/W, supporting high-power-density thermal design. Its 14 nC QC at VR = 800 V / Tj = 150 °C directly reduces turn-on losses in hard-switched totem-pole PFC stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - supports DC-link voltages up to 1000 V bus in solar inverters and UPS systems |
| IF | 2 A continuous - rated for steady-state conduction at TC = 168 °C with D = 1 duty cycle |
| QC | 14 nC - enables low-loss snubberless operation in high-frequency totem-pole PFC and LLC resonant converters |
| Tj,max | 175 °C - allows full-rated operation in compact heatsink designs without derating at ambient >85 °C |
| VF @ 2 A / 25 °C | 1.4–1.65 V - delivers lower conduction loss than Si FRD equivalents while maintaining tight process spread |
| dv/dt ruggedness | 150 V/ns - withstands fast voltage transients in IGBT/SiC half-bridge configurations without false turn-on |
| Rth(j-c) | 1.54–2 K/W - enables direct mounting to heatsink with minimal thermal interface resistance penalty |
Pinout & Package
PG-TO220-2-1 package with isolated metal tab (cathode-connected backside) and two leads: Pin 1 and backside are cathode; Pin 2 is anode. Mounting via M3/M4 screw with 0.7 Nm torque.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode | Primary cathode connection; electrically tied to metal tab for low-inductance heat path and EMI reduction |
| Backside (metal tab) | Cathode | Thermally and electrically connected to cathode; requires insulated mounting in non-isolated topologies |
| Pin 2 | Anode | Single-point anode lead; designed for low-parasitic PCB layout in high-di/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery (Qrr = 0) | Eliminates commutation loss and associated EMI in hard-switched converters, enabling >100 kHz operation |
| Tight VF distribution (±50 mV @ 2 A) | Reduces parallel diode current imbalance and simplifies thermal margining in multi-phase designs |
| Specified dv/dt ruggedness (150 V/ns) | Guarantees reliable operation in high-speed SiC half-bridges without external gate clamping |
| Extended surge capability (IF,SM = 37 A @ 10 ms) | Withstands grid fault currents in solar string inverters without derating or external fusing |
| JEDEC-qualified reliability | Validated for 10-year field life in industrial power applications per JESD22-A108 stress testing |
Applications
| Solar String Inverter DC-Link | Industrial UPS Rectifier Stage |
|---|---|
Use Scenario: High-voltage DC bus freewheeling in 1000 V-class photovoltaic inverters with MPPT tracking. IC Role / Device Role / Timing Role: Freewheeling diode in boost stage and inverter leg, conducting during IGBT dead-time and reactive energy return. Use Value: Zero Qrr eliminates reverse recovery loss, increasing system efficiency by 0.8% at full load and reducing heatsink volume by 35% vs. Si FRD. | Use Scenario: Input rectification and hold-up capacitor charging in three-phase online UPS systems. IC Role / Device Role / Timing Role: Output diode in active front-end (AFE) rectifier, handling bidirectional line-to-bus power flow during battery charging and grid support. Use Value: Stable VF over temperature ensures consistent conduction loss across 0–40 °C ambient, improving battery charge regulation accuracy. |
| Motor Drive Braking Circuit | PFC Boost Diode in Industrial SMPS |
Use Scenario: Regenerative braking energy return path in 400–690 V AC drives with dynamic braking resistors. IC Role / Device Role / Timing Role: Clamping diode in DC-link brake chopper, conducting short-duration high-current pulses during deceleration. Use Value: 37 A surge rating at 10 ms and 175 °C Tj max allow direct integration without external current limiting, reducing BOM count. | Use Scenario: Output diode in continuous-conduction-mode (CCM) totem-pole PFC stage operating at 65–100 kHz. IC Role / Device Role / Timing Role: Unidirectional current path delivering rectified AC line energy to bulk capacitor with minimal switching loss. Use Value: 14 nC QC cuts turn-on loss by 62% vs. SiC diode Gen 4, enabling higher frequency operation without efficiency penalty. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 1200 V SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D02065E (Wolfspeed) | 650 V rating, 2 A, TO-220-2 package; lower VRRM but identical QC (14 nC) | Restricted to 600 V DC-link systems; unsuitable for 1000 V solar or UPS | Select only when system VDC ≤ 650 V and footprint compatibility is required |
| STPSC2H12D (STMicroelectronics) | 1200 V, 2 A, TO-220AC package; higher VF (1.7 V typ. @ 2 A/25 °C), QC = 16 nC | Acceptable in cost-sensitive industrial drives where 0.2 V higher VF is tolerable | Prefer when thermal margin exists and JEDEC qualification is not mandatory |
Compared with C3D02065E and STPSC2H12D, IDH02G120C5XKSA1 uniquely combines 1200 V rating, 14 nC QC, and JEDEC qualification-making it the only option for high-reliability 1000 V solar inverters requiring guaranteed dv/dt ruggedness and surge robustness.
Availability
IDH02G120C5XKSA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply with long-term lifecycle assurance.
Supply support for IDH02G120C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.
IDH02G120C5XKSA1 belongs to the CoolSiC™ 5th Generation family, engineered specifically for high-efficiency, high-reliability industrial power conversion where zero-recovery loss and thermal stability are critical.
FAQ
Is IDH02G120C5XKSA1 RoHS compliant and lead-free?
Yes. IDH02G120C5XKSA1 features Pb-free lead plating and meets RoHS Directive 2011/65/EU requirements. The device is qualified per J-STD-020 moisture sensitivity level (MSL) 1 and does not require baking prior to reflow soldering.
What is the maximum recommended case temperature for continuous operation?
The maximum continuous case temperature is 168 °C at 100% duty cycle (D = 1), corresponding to 2 A forward current. At lower duty cycles (e.g., D = 0.5), case temperature may rise to 175 °C while maintaining rated current, per Figure 2 in the datasheet.
Can IDH02G120C5XKSA1 be paralleled with other diodes for higher current handling?
Yes, but only with matched units from the same wafer lot due to tight VF distribution (±50 mV). Parallel operation requires symmetrical PCB layout, identical thermal paths, and current-sharing resistors if operating above 3 A total RMS current.
Does this diode require a gate resistor or snubber circuit?
No. As a Schottky diode with no minority-carrier storage, IDH02G120C5XKSA1 has no gate and requires no snubber. Its 150 V/ns dv/dt ruggedness and low QC enable direct use in hard-switched topologies without external damping components.
IDH02G120C5XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 2A
- Voltage - Forward (Vf) (Max) @ If:
- 1.65 V @ 2 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 18 µA @ 1200 V
- Capacitance @ Vr, F:
- 182pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-2-1
- Operating Temperature - Junction:
- 175°C (Max)
IDH02G120C5XKSA1 FAQ
1.How can I place an order for IDH02G120C5XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDH02G120C5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDH02G120C5XKSA1 reliable?
The price and inventory of IDH02G120C5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH02G120C5XKSA1 is usually 5 days.
3.What payment methods are accepted for IDH02G120C5XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH02G120C5XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDH02G120C5XKSA1?
IDH02G120C5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDH02G120C5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDH02G120C5XKSA1?
For technical support, including IDH02G120C5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH02G120C5XKSA1 requirements.
6.How does Aetrix verify that IDH02G120C5XKSA1 is sourced from the original manufacturer or authorized distributors?
All IDH02G120C5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH02G120C5XKSA1 meets industry standards.
7.What is the process for return or replacement of IDH02G120C5XKSA1?
All IDH02G120C5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDH02G120C5XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDH02G120C5XKSA1 part is unused and in its original packaging.
Return procedure for IDH02G120C5XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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