Infineon Technologies IDH02G65C5XKSA1

Overview

IDH02G65C5XKSA1 from Infineon Technologies is a 650 V, 2 A silicon carbide Schottky diode in TO-220-2 package, designed for high-frequency, high-temperature power conversion. It delivers zero reverse recovery charge, 4 nC capacitive charge at 400 V, and 0.8 µJ stored energy - enabling PFC stages and solar inverters operating up to 175 °C junction temperature.

For engineers reviewing the IDH02G65C5XKSA1 datasheet, IDH02G65C5XKSA1 pinout, IDH02G65C5XKSA1 application, or IDH02G65C5XKSA1 equivalent, key selection criteria include its 650 V repetitive peak reverse voltage, 2.6 K/W typical junction-to-case thermal resistance, and absence of forward/reverse recovery losses in hard-switched topologies.

Technical Context

This SiC Schottky diode uses Infineon's 5th-generation thinQ!™ technology with diffusion-soldered die and thin-wafer design. Its unipolar conduction eliminates minority-carrier storage, resulting in temperature-independent switching behavior and no reverse recovery current even at 150 °C junction temperature.

The device is rated for 23 A non-repetitive surge current (10 ms, 25 °C), supports dv/dt ruggedness up to 100 V/ns, and achieves 1.5–1.7 V forward voltage at 2 A and 25 °C - with only minor increase to 1.8–2.1 V at 150 °C.

Key Specifications

Pinout & Package

Package: PG-TO220-2 (standard through-hole, 2-pin, isolated tab). Pin 1 = Cathode (C), Pin 2 = Anode (A). Pin 3 is not assigned (n.a.). The metal tab is electrically connected to the cathode and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D02065E and STPSC2H065, IDH02G65C5XKSA1 offers tighter V_F distribution (±0.1 V), JEDEC-qualified avalanche robustness, and optimized thermal interface geometry for direct heatsink mounting - making it preferred for high-reliability industrial SMPS where thermal cycling stability is paramount.

Availability

IDH02G65C5XKSA1 is available at Aetrix Electronics and suitable for power factor correction, solar inverter DC-link, and uninterruptible power supply applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IDH02G65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies since 2001.

IDH02G65C5XKSA1 belongs to Infineon's thinQ!™ Generation 5 SiC Schottky diode family, engineered specifically to pair with 650 V CoolMOS™ CFD7 transistors in high-density, high-efficiency AC-DC and DC-DC conversion systems.

FAQ

Is IDH02G65C5XKSA1 suitable for paralleling multiple devices in high-current PFC designs?

Yes - its positive temperature coefficient of forward voltage (V_F) ensures natural current sharing. Measured V_F increases by ~0.3 mV/°C from 25 °C to 150 °C, enabling stable parallel operation without external ballasting resistors in 6 kW+ PFC modules.

What is the maximum allowable case temperature during continuous operation?

The absolute maximum case temperature is 155 °C per datasheet Section 2. Continuous operation at this limit requires thermal design ensuring junction temperature stays ≤175 °C, using the 2.6 K/W typical R_thJC and accounting for transient power dissipation during startup surges.

Does IDH02G65C5XKSA1 require gate driving or external control signals?

No - it is a passive two-terminal device with no gate terminal. It conducts when anode voltage exceeds cathode voltage by ≥1.5 V and blocks when reverse biased. No driver, biasing, or control logic is needed, unlike SiC MOSFETs or IGBTs.

Can IDH02G65C5XKSA1 replace standard silicon fast recovery diodes in existing designs?

Yes - with layout review. Its zero Q_rr eliminates snubber networks, but higher dv/dt (100 V/ns) demands careful PCB layout to avoid false triggering of nearby gate drivers. Also verify that existing heatsinking accommodates its lower R_thJC and higher thermal conductivity.