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Infineon Technologies IDH04G65C5XKSA2

Part No.:
IDH04G65C5XKSA2
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-220-2
Datasheet:
AetrixIDH04G65C5XKSA2.pdf
Description:
DIODE SIL CARB 650V 4A TO220-2-1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,631

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Product details

Overview

IDH04G65C5XKSA2 from Infineon Technologies is a 650 V, 4 A silicon carbide Schottky diode in TO-220-2 package, designed for high-frequency switching in power factor correction and solar inverters. It delivers zero reverse recovery charge, 7 nC capacitive charge at 400 V, 1.5–1.7 V forward voltage at 4 A/25°C, and operates up to 175°C junction temperature.

For engineers reviewing the IDH04G65C5XKSA2 datasheet, IDH04G65C5XKSA2 pinout, IDH04G65C5XKSA2 application, or IDH04G65C5XKSA2 equivalent, key selection criteria include its SiC-based thermal stability, absence of reverse recovery loss, low Qc × Vf figure of merit, and compatibility with 650 V CoolMOS™ gate drivers in high-density SMPS designs.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve improved thermal resistance (RthJC = 1.9–3.1 K/W) and reduced capacitance (130 pF at 1 V, 16 pF at 600 V). Its static and dynamic characteristics are fully specified across -55°C to 175°C, with guaranteed avalanche ruggedness under 10 ms pulses.

The device eliminates minority-carrier storage effects-no reverse recovery current or associated EMI-enabling operation at higher frequencies without snubbers. Its dv/dt ruggedness is rated at 100 V/ns over 0–480 V, supporting robust commutation in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM650 V - Maximum repetitive reverse voltage; enables use in 400 V AC input PFC and 600 V DC bus solar inverters.
IF (TC < 150°C)4 A - Continuous forward current rating at case temperature below 150°C; defines thermal derating envelope.
VF @ 4 A, 25°C1.5–1.7 V - Forward voltage drop; determines conduction loss and heatsink sizing in continuous conduction mode.
Qc @ VR=400 V7 nC - Total capacitive charge; directly impacts turn-off losses and EMI in high-frequency ZVS/ZCS circuits.
RthJC1.9–3.1 K/W - Junction-to-case thermal resistance; sets minimum heatsink requirement for 48 W max power dissipation.
IR @ 650 V, 150°C0.8–500 µA - Reverse leakage current; remains stable across temperature, enabling reliable blocking at elevated Tj.
dv/dt100 V/ns - Voltage transient immunity; supports fast switching in hard-switched converters without oscillation.

Pinout & Package

Package: PG-TO220-2 (2-pin variant), lead-free, RoHS-compliant, with M3 mounting torque specification (70 Ncm).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1AnodeMain current entry point; electrically connected to die top metallization; requires low-inductance layout for high di/dt operation.
Pin 2CathodeMain current exit point; bonded to metal tab (case); serves as primary thermal path to heatsink.

Key Features

FeatureDesign Value
No reverse recoveryEliminates reverse recovery current and associated switching loss-critical for >100 kHz PFC stages.
Temperature-independent switchingQc and VF drift <±10% from -55°C to 175°C-enables consistent timing and loss budgeting across ambient range.
High surge capability38 A non-repetitive surge (10 ms, 25°C) supports inrush and fault conditions in UPS and industrial SMPS.
Optimized figure of meritLow Qc × Vf product improves efficiency across light-to-full load in high-frequency converters.
JEDEC-qualified reliabilityQualified per J-STD-020 and JESD22 for automotive and industrial applications-supports long-term field deployment.

Applications

Power Factor Correction (PFC)Solar Inverter DC-Link

Use Scenario: Boost PFC stage in 3.3 kW server PSU operating at 100 kHz.

IC Role / Device Role / Timing Role: Freewheeling diode in continuous conduction mode boost converter; handles bidirectional current during switching transitions.

Use Value: Zero reverse recovery eliminates snubber losses and reduces EMI filter size by 30% versus Si diodes.

Use Scenario: DC-link freewheeling path in string inverter with 600 V DC bus and 175°C ambient.

IC Role / Device Role / Timing Role: Anti-parallel diode for IGBTs in H-bridge output stage; conducts reactive current during dead-time intervals.

Use Value: Stable 175°C operation and low IR enable reliable blocking without derating in unventilated enclosures.

Uninterruptible Power Supply (UPS)Industrial Switch Mode Power Supply

Use Scenario: Output rectification in online double-conversion UPS with 10 ms hold-up time requirement.

IC Role / Device Role / Timing Role: Output synchronous rectifier replacement in LLC resonant converter; conducts during secondary-side half-cycles.

Use Value: High surge current rating (38 A) withstands battery-assisted load transients without degradation.

Use Scenario: Auxiliary supply rectifier in 24 V/10 A industrial PLC power module.

IC Role / Device Role / Timing Role: Input rectifier feeding bulk capacitor in flyback-derived auxiliary rail; operates continuously at 85°C case temperature.

Use Value: Low RthJC (1.9 K/W typ.) allows direct mounting to chassis without additional thermal interface material.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D04065E (Wolfspeed)Same 650 V/4 A rating; 1.7 V VF @ 4 A/25°C; 120 pF C@1 V; TO-220-2 package.Higher C and slightly higher VF increase turn-off loss in >200 kHz designs.Prefer for cost-sensitive industrial supplies where EMI margin is sufficient.
STPSC406D (STMicroelectronics)650 V/4 A; 1.8 V VF @ 4 A/25°C; 140 pF C@1 V; TO-220AC package (2-pin, isolated tab).Isolated tab enables floating heatsink mounting but adds 0.5 K/W thermal penalty vs. direct-mount Infineon part.Prefer when electrical isolation between heatsink and cathode is required.

Compared with C3D04065E and STPSC406D, IDH04G65C5XKSA2 offers the lowest Qc × Vf product and tightest VF distribution-making it optimal for high-efficiency, high-frequency PFC and solar inverter applications where thermal headroom and EMI control are critical.

Availability

IDH04G65C5XKSA2 is available at Aetrix Electronics and suitable for power factor correction, solar inverters, uninterruptible power supplies, and industrial switch mode power supplies requiring stable component supply and long-lifecycle support.

Supply support for IDH04G65C5XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies.

IDH04G65C5XKSA2 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode family, engineered specifically to complement 650 V CoolMOS™ MOSFETs in high-efficiency, high-power-density AC-DC and DC-DC conversion systems.

FAQ

What is the maximum junction temperature and how is it validated?

The maximum junction temperature is 175°C, validated per JEDEC JESD22-A108 through high-temperature operating life (HTOL) testing at 175°C for 1000 hours with electrical monitoring. Thermal characterization confirms RthJC ≤ 3.1 K/W under worst-case mounting conditions, ensuring safe operation within this limit when case temperature is controlled.

Does IDH04G65C5XKSA2 require a gate driver or external control circuitry?

No-IDH04G65C5XKSA2 is a passive two-terminal Schottky diode with no gate terminal or control interface. It operates solely based on applied voltage polarity and current direction. Unlike SiC MOSFETs or hybrid modules, it needs no gate drive, biasing, or protection logic-only proper thermal and layout design per Infineon's PG-TO220-2 mounting guidelines.

How does its reverse leakage compare to silicon diodes at high temperature?

At 150°C and 650 V reverse bias, IDH04G65C5XKSA2 exhibits 0.8–500 µA leakage-up to 10× lower than equivalent 650 V silicon fast recovery diodes (which typically exceed 5 mA at same conditions). This lower leakage preserves system efficiency and reduces thermal runaway risk in parallel configurations.

Can it be used in parallel with other SiC diodes for higher current handling?

Yes-its positive temperature coefficient of forward voltage (VF increases with Tj) enables natural current sharing. Parallel operation requires matched layout inductance (<1 nH difference), identical heatsinking, and symmetrical PCB copper pour. Infineon's application note AN2017-03 confirms stable parallel operation of up to four IDH04G65C5XKSA2 devices in 12 kW PFC designs.

IDH04G65C5XKSA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-220-2
Packaging:
Tube
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
4A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 4 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
70 µA @ 650 V
Capacitance @ Vr, F:
130pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-2-1
Operating Temperature - Junction:
-55°C ~ 175°C

IDH04G65C5XKSA2 FAQ

1.How can I place an order for IDH04G65C5XKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDH04G65C5XKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDH04G65C5XKSA2 reliable?

The price and inventory of IDH04G65C5XKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH04G65C5XKSA2 is usually 5 days.

3.What payment methods are accepted for IDH04G65C5XKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH04G65C5XKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDH04G65C5XKSA2?

IDH04G65C5XKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDH04G65C5XKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDH04G65C5XKSA2?

For technical support, including IDH04G65C5XKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH04G65C5XKSA2 requirements.

6.How does Aetrix verify that IDH04G65C5XKSA2 is sourced from the original manufacturer or authorized distributors?

All IDH04G65C5XKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH04G65C5XKSA2 meets industry standards.

7.What is the process for return or replacement of IDH04G65C5XKSA2?

All IDH04G65C5XKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDH04G65C5XKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDH04G65C5XKSA2 part is unused and in its original packaging.

Return procedure for IDH04G65C5XKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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