Infineon Technologies IDH04G65C6XKSA1

Overview

IDH04G65C6XKSA1 from Infineon is a 650 V, 4 A silicon carbide (SiC) Schottky barrier diode in PG-TO220-2 package, optimized for high-frequency PFC and solar inverter applications. It delivers VF = 1.25 V at 4 A/25 °C, Qc = 6.9 nC at 400 V, and dv/dt ruggedness of 150 V/ns. Its figure of merit (Qc × VF) enables superior efficiency across load conditions.

For engineers reviewing the IDH04G65C6XKSA1 datasheet, IDH04G65C6XKSA1 pinout, IDH04G65C6XKSA1 application, or IDH04G65C6XKSA1 equivalent, key selection criteria include reverse voltage rating (650 V), forward voltage consistency over temperature (1.5 V max at 150 °C), capacitive charge (6.9 nC), thermal resistance (RthJC = 2.0–3.4 K/W), and industrial qualification per JEDEC J-STD-20/JESD22.

Technical Context

This SiC Schottky diode uses Infineon's 6th-generation CoolSiC™ technology with a novel Schottky metal system, delivering lower conduction and switching losses than prior generations. It exhibits zero reverse recovery charge (Qrr ≈ 0) and negligible temperature dependence of VF, enabling stable operation from –55 °C to 175 °C junction temperature.

The device is designed as a complementary rectifier for CoolMOS™ C7 600–650 V MOSFETs in hard-switched topologies. Its low RthJC (2.0 K/W typ.) and high surge capability (IF,SM = 29 A, tp = 10 ms) support robust thermal management in compact, high-power-density converters.

Key Specifications

Pinout & Package

Package: PG-TO220-2, through-hole, isolated tab (case connected to cathode), M3 screw mount, 70 Ncm torque rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D04065E and STPSC4M06D, IDH04G65C6XKSA1 offers the lowest VF (1.25 V) and best figure of merit (Qc × VF), enabling highest efficiency in thermally constrained, high-frequency PFC and inverter applications where thermal resistance and dv/dt immunity are critical.

Availability

IDH04G65C6XKSA1 is available at Aetrix Electronics and suitable for power factor correction, solar inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply and long-term industrial qualification.

Supply support for IDH04G65C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDH04G65C6XKSA1 belongs to the CoolSiC™ 6th Generation family, engineered specifically for high-efficiency, high-frequency power conversion in industrial-grade SMPS, solar, and UPS systems where SiC's zero-Qrr and low VF deliver measurable system-level advantages.

FAQ

Is IDH04G65C6XKSA1 pin-compatible with previous CoolSiC™ G5 diodes?

No. While both use PG-TO220-2, G6 introduces revised metallization and optimized doping profiles that improve VF and Qc but do not alter pinout. Mechanical footprint and terminal positions remain identical, enabling drop-in PCB replacement without layout changes.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies IF = 4 A at TC ≤ 150 °C with duty cycle D = 1. Operation above 150 °C is not rated; derating is required beyond this point. Thermal design must ensure TC stays ≤150 °C under worst-case ambient and airflow conditions to maintain rated current and reliability.

Does IDH04G65C6XKSA1 require a gate resistor or snubber network?

No. As a Schottky diode, it has no gate and exhibits no reverse recovery. However, a small RC snubber (e.g., 100 Ω + 100 pF) across anode–cathode is recommended in high-di/dt environments (>100 A/µs) to suppress parasitic oscillation caused by layout inductance interacting with junction capacitance.

Can IDH04G65C6XKSA1 be paralleled for higher current handling?

Yes, but with strict layout symmetry: matched trace lengths, shared heatsink contact pressure, and individual current-sense resistors for monitoring. The positive VF temperature coefficient (VF rises with Tj) provides inherent current sharing, but thermal coupling between devices must be minimized to prevent thermal runaway at >10 A aggregate current.