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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDH04SG60CXKSA1

Name: IDH04SG60CXKSA1
Brand: Infineon Technologies
SKU: IDH04SG60CXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDH04SG60CXKSA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: IDH04SG60CXKSA1.pdf

Description:: DIODE SIL CARB 600V 4A TO220-2-2

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Product details

Overview

IDH04SG60CXKSA1 from Infineon Technologies is a 3rd-generation silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 4 A continuous forward current at T_C < 130 °C, with zero reverse recovery charge and temperature-independent switching behavior. It delivers 4.5 nC total capacitive charge, 2.1–2.8 V forward voltage across 25–150 °C, and is qualified per JEDEC standards for high-efficiency SMPS, solar inverters, and motor drives.

For engineers reviewing the IDH04SG60CXKSA1 datasheet, IDH04SG60CXKSA1 pinout, IDH04SG60CXKSA1 application, or IDH04SG60CXKSA1 equivalent, key selection criteria include its 600 V V_RRM, absence of minority-carrier reverse recovery, 3.5 K/W R_thJC, surge capability up to 120 A (10 µs), and PG-TO220-2 package with isolated case.

Technical Context

This SiC Schottky diode operates without minority carrier injection, eliminating reverse recovery time (t_rr) and associated switching losses. Its capacitive displacement current waveform exhibits a fixed time constant t_c < 10 ns, independent of junction temperature, load current, or di/dt - unlike silicon PN diodes.

Designed for hard-switching topologies, it supports CCM PFC stages and DC-link freewheeling in solar string inverters and industrial motor drives. Thermal performance is defined by a low 3.5 K/W junction-to-case resistance and validated surge robustness under 10 ms sine half-wave conditions up to 18 A at 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - maximum blocking voltage in repetitive operation; enables use in 400 V DC bus systems with 50% safety margin
I_F (cont.)	4 A at T_C < 130 °C - continuous conduction rating defining heatsink sizing for steady-state thermal design
V_F	2.1–2.8 V (4 A, 25–150 °C) - forward drop directly impacts conduction loss and thermal rise in high-frequency converters
Q_C	4.5 nC - total capacitive charge governing turn-off energy loss in hard-switched bridge legs
R_thJC	3.5 K/W - junction-to-case thermal resistance used to calculate die temperature from measured case temperature
t_c	<10 ns - fixed capacitive time constant enabling predictable EMI behavior and gate driver stress modeling
I_F,max	120 A (10 µs) - non-repetitive surge rating supporting short-circuit protection and inrush handling

Pinout & Package

Supplied in PG-TO220-2 package with electrically isolated metal tab (case). Pin 1 = Cathode (C), Pin 2 = Anode (A). The isolated case allows direct mounting to heatsink without insulating washer when referenced to system ground.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (marked "C")	Cathode	High-side connection point; carries full load current during conduction; tied to positive rail in boost/flyback freewheel paths
Pin 2 (marked "A")	Anode	Low-side connection; referenced to power ground or negative rail; defines return path for forward current
Metal Tab (Case)	Isolated Thermal Path	Electrically isolated (≥2.5 kV AC) metal surface for direct heatsink attachment; no external insulation required

Key Features

Feature	Design Value
No reverse recovery charge (Q_rr = 0)	Eliminates switching loss spikes and di/dt-induced voltage overshoot in synchronous rectifiers and PFC boost diodes
Temperature-stable V_F and Q_C	Forward voltage increases only ~0.7 V from 25 °C to 150 °C; enables consistent loss modeling across operating range
High dv/dt ruggedness (50 V/ns)	Withstands rapid voltage transients in SiC MOSFET-based half-bridges without false turn-on or avalanche breakdown
JEDEC-qualified reliability	Validated per J-STD-20 and JESD22 for solderability, mechanical shock, and temperature cycling in industrial environments
RoHS-compliant Pb-free plating	Meets EU RoHS Directive 2011/65/EU; compatible with lead-free reflow and wave soldering processes

Applications

Industrial Motor Drives

Solar String Inverters

Use Scenario: Freewheeling path in IGBT/SiC inverter output stage for HVAC compressors and servo drives.

IC Role / Device Role / Timing Role: Uncontrolled rectifier providing low-loss current recirculation during PWM dead-time and inductive kickback.

Use Value: Zero Q_rr prevents shoot-through risk and reduces snubber losses by >30% vs. fast recovery silicon diodes.

Use Scenario: DC-link clamping and MPPT-stage freewheeling in 1000 V-class photovoltaic inverters.

IC Role / Device Role / Timing Role: High-voltage, high-temperature blocking diode enabling 600 V V_RRM operation with <10 ns switching transitions.

Use Value: Stable 2.8 V V_F at 150 °C maintains efficiency >98.5% in ambient temperatures up to 70 °C enclosure.

Server PSU CCM PFC

UPS Output Rectification

Use Scenario: Boost diode in continuous conduction mode (CCM) active PFC front-end for 3 kW telecom rectifiers.

IC Role / Device Role / Timing Role: High-frequency unidirectional switch conducting at 65–100 kHz with minimal reverse recovery loss.

Use Value: 4.5 nC Q_C reduces turn-off energy by 75% versus 600 V Si FRD, lowering MOSFET gate driver stress and EMI filtering burden.

Use Scenario: Output freewheeling diode in double-conversion online UPS systems with 400 V DC bus.

IC Role / Device Role / Timing Role: Surge-tolerant rectifier handling 13.5 A non-repetitive surges during battery switchover and overload events.

Use Value: 13.5 A I_F,SM at 150 °C ensures reliable operation during sustained overloads without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D04060E (Wolfspeed)	Same 600 V / 4 A rating; 3.3 nC Q_C; 2.0–2.7 V V_F; TO-220AC package with non-isolated tab	Requires insulated mounting hardware due to conductive tab; lower Q_C suits ultra-high-frequency PFC	Select when lowest possible switching loss is prioritized and thermal interface permits isolation layer
STPSC406D (STMicroelectronics)	600 V / 4 A; 5.2 nC Q_C; 2.2–2.9 V V_F; TO-220AC with isolated tab; higher R_thJC (4.0 K/W)	Higher conduction loss at 150 °C; less dv/dt ruggedness (30 V/ns); suitable for cost-sensitive industrial UPS	Select when supply chain diversification is needed and thermal margin allows higher R_thJC

Compared with C3D04060E and STPSC406D, IDH04SG60CXKSA1 offers balanced trade-offs: superior dv/dt immunity (50 V/ns), JEDEC qualification for harsh environments, and isolated tab simplifying thermal design - making it optimal for motor drives and solar where reliability and ease of heatsinking are critical.

Availability

IDH04SG60CXKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar string inverters, and server PSU CCM PFC requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IDH04SG60CXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

IDH04SG60CXKSA1 belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature, and high-reliability power conversion in solar, UPS, and motor control systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies continuous forward current I_F = 4 A is rated for case temperatures below 130 °C. Exceeding this limit reduces current capability linearly; at 150 °C case, max continuous current drops to 3.2 A. Derating must follow the I_F vs. T_C curve on page 3 of Rev. 2.4, with absolute maximum junction temperature capped at 175 °C.

Does IDH04SG60CXKSA1 require a gate resistor or snubber network?

No gate resistor is needed - this is a passive diode, not a controlled device. However, a small RC snubber (e.g., 100 Ω + 100 pF) across anode–cathode is recommended in high-di/dt hard-switching applications to damp ringing caused by stray inductance interacting with its 10 pF capacitance at 600 V bias, per layout guidelines in Infineon Application Note AN2015-09.

Can IDH04SG60CXKSA1 replace a silicon fast recovery diode in an existing design?

Yes - it is a direct drop-in replacement in PG-TO220-2 footprint with identical pinout (C-A), but requires verification of reduced switching loss impact on gate drivers and EMI filters. Due to zero Q_rr, voltage overshoot decreases significantly, often allowing reduction or removal of existing snubbers and lowering MOSFET V_DS stress.

Is the metal tab electrically isolated, and what is its isolation rating?

Yes, the metal tab is fully electrically isolated from both anode and cathode terminals. Per Infineon's PG-TO220-2 specification, it withstands ≥2.5 kV AC for 1 minute (per IEC 60747-5-2), enabling direct heatsink mounting without mica washers or silicone pads in grounded-chassis designs.

IDH04SG60CXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-220-2

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 4A

Voltage - Forward (Vf) (Max) @ If:: 2.3 V @ 4 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 25 µA @ 600 V

Capacitance @ Vr, F:: 80pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-2-2

Operating Temperature - Junction:: -55°C ~ 175°C

IDH04SG60CXKSA1 FAQ

1.How can I place an order for IDH04SG60CXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDH04SG60CXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDH04SG60CXKSA1 reliable?

The price and inventory of IDH04SG60CXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH04SG60CXKSA1 is usually 5 days.

3.What payment methods are accepted for IDH04SG60CXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH04SG60CXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDH04SG60CXKSA1?

IDH04SG60CXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDH04SG60CXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDH04SG60CXKSA1?

For technical support, including IDH04SG60CXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH04SG60CXKSA1 requirements.

6.How does Aetrix verify that IDH04SG60CXKSA1 is sourced from the original manufacturer or authorized distributors?

All IDH04SG60CXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH04SG60CXKSA1 meets industry standards.

7.What is the process for return or replacement of IDH04SG60CXKSA1?

All IDH04SG60CXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDH04SG60CXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDH04SG60CXKSA1 part is unused and in its original packaging.

Return procedure for IDH04SG60CXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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