Infineon Technologies IDH05G120C5XKSA1

Overview

IDH05G120C5XKSA1 from Infineon Technologies is a 5th Generation CoolSiC™ 1200 V, 5 A silicon carbide Schottky diode in PG-TO220-2-1 package, featuring zero reverse recovery charge, 24 nC total capacitive charge at 800 V/150°C, and 175°C maximum junction temperature - deployed in high-efficiency PFC stages of solar inverters and UPS systems.

For engineers reviewing the IDH05G120C5XKSA1 datasheet, IDH05G120C5XKSA1 pinout, IDH05G120C5XKSA1 application, or IDH05G120C5XKSA1 equivalent, key selection criteria include its 1200 V V_RRM, temperature-independent switching, 1.5–2.6 V forward voltage range (5 A, 25–150°C), and dv/dt ruggedness of 150 V/ns under dynamic stress conditions.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-voltage, high-frequency power conversion topologies. Its unipolar conduction eliminates minority-carrier storage, enabling zero Q_rr, no forward recovery overshoot, and stable switching behavior across –55°C to 175°C junction temperature.

The device operates with fixed anode–cathode polarity and requires direct thermal mounting via the case (cathode-connected backside). Its 1.06–1.37 K/W junction-to-case thermal resistance supports high-power-density designs when paired with low-inductance layouts and optimized heatsinking.

Key Specifications

Pinout & Package

Package: PG-TO220-2-1 - insulated plastic housing with electrically isolated tab (cathode), designed for screw-mounting to heatsinks using M3/M4 hardware (0.7 Nm torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1200 V SiC Schottky diode applications.

Compared with C3D05120E and STPSC5H12D, IDH05G120C5XKSA1 delivers superior dv/dt ruggedness (150 V/ns vs. 100 V/ns) and extended surge current rating (59 A vs. 50 A), making it optimal for industrial environments with high electromagnetic stress and transient exposure.

Availability

IDH05G120C5XKSA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for Class B safety-critical systems.

Supply support for IDH05G120C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

IDH05G120C5XKSA1 belongs to the CoolSiC™ family - engineered specifically for high-efficiency, high-reliability power conversion in 1200 V industrial and solar applications where thermal stability and switching robustness are critical.

FAQ

Is IDH05G120C5XKSA1 compatible with standard TO-220 heatsink mounts?

Yes - it uses the PG-TO220-2-1 package with an insulated metal tab, compatible with standard TO-220 mechanical footprints and M3/M4 mounting screws (0.7 Nm torque). The cathode-connected tab requires electrical isolation from the heatsink unless system grounding scheme explicitly permits common-cathode thermal coupling.

What is the maximum allowable case temperature for continuous 5 A operation?

The datasheet specifies 5 A continuous forward current at T_C = 161°C under D = 1 duty cycle and R_th(j-c),max. Exceeding this case temperature requires derating per Figure 2 in the datasheet; operation above 161°C is limited to short-duration surges only.

Does IDH05G120C5XKSA1 require a gate resistor or snubber circuit?

No - as a Schottky diode, it has no gate and requires no gate resistor. Its zero Q_rr and 150 V/ns dv/dt rating eliminate the need for snubbers in most 1200 V hard-switched applications, though layout parasitics must still be minimized to avoid voltage overshoot at the diode terminals.

How does the 24 nC capacitive charge impact EMI in high-frequency PFC designs?

The 24 nC Q_C at 800 V/150°C directly determines turn-off energy loss and high-frequency spectral content. Combined with low stored energy (Figure 9), it reduces broadband EMI generation compared to Si diodes with similar V_F, enabling simpler EMI filter designs in 100–200 kHz PFC stages.