Infineon Technologies IDH06G65C5XKSA2

Overview

IDH06G65C5XKSA2 from Infineon Technologies is a 650 V, 6 A silicon carbide Schottky diode in TO-220-2 package, featuring zero reverse recovery charge, 10 nC capacitive charge at 400 V, 2.1 µJ stored energy, and operation up to 175 °C junction temperature. It serves as a high-efficiency freewheeling or output rectifier in high-frequency switch-mode power supplies.

For engineers reviewing the IDH06G65C5XKSA2 datasheet, IDH06G65C5XKSA2 pinout, IDH06G65C5XKSA2 application, or IDH06G65C5XKSA2 equivalent, key selection criteria include its 650 V blocking rating, 1.5–2.1 V forward voltage across 25–150 °C, 1.5 K/W typical thermal resistance (junction-to-case), surge capability of 54 A (10 ms, 25 °C), and RoHS-compliant Pb-free plating.

Technical Context

This SiC Schottky diode uses Infineon's 5th Generation thinQ!™ technology with diffusion-soldered die attach and thin-wafer design, enabling lower Qc × Vf figure of merit versus prior generations. Its unipolar conduction eliminates minority-carrier storage, delivering temperature-independent switching and no reverse recovery loss.

The device is optimized for co-packaging with 650 V CoolMOS™ MOSFETs in PFC and DC-DC stages. Its dv/dt ruggedness of 100 V/ns and 14 A²s i²t rating support robust operation under fast transient stress and short-circuit conditions in industrial inverters and UPS systems.

Key Specifications

Pinout & Package

Package: PG-TO220-2 (standard through-hole TO-220 variant with two leads: anode and cathode; no gate or control terminal).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D06065E and STPSC6H065, IDH06G65C5XKSA2 offers the lowest combined Qc × Vf figure of merit and JEDEC-validated avalanche ruggedness, making it optimal for mission-critical 650 V systems requiring long-term reliability under thermal and electrical stress.

Availability

IDH06G65C5XKSA2 is available at Aetrix Electronics and suitable for switch-mode power supply, power factor correction, and solar inverter applications requiring stable component supply, long-lifecycle assurance, and consistent parametric performance across production batches.

Supply support for IDH06G65C5XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies since 2001.

IDH06G65C5XKSA2 belongs to Infineon's 5th Generation thinQ!™ SiC Schottky diode product line, engineered specifically to pair with 650 V CoolMOS™ CFD7 transistors in high-density, high-efficiency AC-DC and DC-DC conversion systems.

FAQ

Is IDH06G65C5XKSA2 pin-compatible with earlier Infineon SiC diodes like IDH06G65C3?

No. IDH06G65C5XKSA2 uses the same TO-220-2 package as IDH06G65C3 but features revised die metallization and thinner wafer geometry, resulting in lower VF and Qc. Pin assignment is identical (Pin 1 = cathode, Pin 2 = anode), but thermal and electrical characteristics differ - direct replacement requires validation of layout parasitics and thermal margin.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies IF = 6 A is rated for TC < 145 °C. At TC = 145 °C, junction temperature reaches 175 °C (maximum rated). Operation above 145 °C case temperature violates absolute maximum ratings and risks accelerated degradation; derating curves in Figure 7 confirm zero allowable current beyond that point.

Does IDH06G65C5XKSA2 require a gate resistor or driver circuit?

No. As a Schottky diode, IDH06G65C5XKSA2 has no gate terminal and operates passively - it conducts when forward-biased and blocks when reverse-biased. No external drive, gate resistor, or bias network is needed. Its terminals are purely anode and cathode, with no control logic or enable function.

Can this diode be used in parallel configurations for higher current?

Yes, but with strict layout symmetry: matched trace lengths, identical thermal vias, and shared heatsink contact pressure. The positive VF temperature coefficient (VF rises with Tj) provides inherent current sharing, but mismatched thermal impedance can cause >20% current imbalance. Parallel use is documented in Infineon Application Note AN2015-07 for multi-kW PFC designs.