Infineon Technologies IDH06G65C6XKSA1

Overview

IDH06G65C6XKSA1 from Infineon is a 650 V, 6 A silicon carbide (SiC) Schottky barrier diode in PG-TO220-2 package, optimized for high-frequency PFC and solar inverter applications. It delivers VF = 1.25 V at 6 A/25 °C, Qc = 9.6 nC at 400 V, and dv/dt ruggedness of 150 V/ns. Its figure of merit (Qc × VF) enables superior efficiency across load conditions.

For engineers reviewing the IDH06G65C6XKSA1 datasheet, IDH06G65C6XKSA1 pinout, IDH06G65C6XKSA1 application, or IDH06G65C6XKSA1 equivalent, key selection criteria include forward voltage consistency at 150 °C, reverse leakage <46 µA at 420 V/150 °C, thermal resistance RthJC ≤ 2.8 K/W, and compatibility with CoolMOS™ 7-based 650 V topologies.

Technical Context

This SiC Schottky diode operates without minority-carrier storage, eliminating reverse recovery charge (Qrr ≈ 0) and enabling zero-loss switching in hard-commutated totem-pole PFC stages. Its unipolar conduction supports continuous operation up to Tj = 175 °C with IF = 6 A at TC ≤ 145 °C.

The G6 generation uses an advanced Schottky metal system to reduce VF drift over temperature and improve capacitive charge linearity. Its 150 V/ns dv/dt rating ensures robustness against parasitic turn-on in fast-switching half-bridge configurations with CoolMOS™ C7 or CE-H devices.

Key Specifications

Pinout & Package

PG-TO220-2 package with isolated metal tab (case), 2-pin configuration: Pin 1 = Cathode (electrically connected to case), Pin 2 = Anode. Mounting via M3 screw (70 Ncm torque). Case serves as primary heat path and cathode terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D06065E and STPSC6H065, IDH06G65C6XKSA1 delivers the lowest VF and best Qc × VF trade-off, enabling higher power density in space-constrained PFC modules while maintaining industry-leading dv/dt robustness for next-generation wide-bandgap half-bridges.

Availability

IDH06G65C6XKSA1 is available at Aetrix Electronics and suitable for power factor correction in SMPS, solar inverter boost stages, and uninterruptible power supply front-ends requiring stable component supply and long-term industrial qualification.

Supply support for IDH06G65C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDH06G65C6XKSA1 belongs to the CoolSiC™ 6th Generation family, engineered specifically to enable high-efficiency, high-power-density PFC and inverter topologies using SiC's zero-Qrr advantage alongside mature TO-220 packaging.

FAQ

Is IDH06G65C6XKSA1 compatible with standard TO-220 heatsinks?

Yes. The PG-TO220-2 package uses standard TO-220 mechanical dimensions and mounting hole spacing (M3 screw, 70 Ncm torque). Its isolated metal tab allows direct thermal coupling to heatsinks without additional insulation, provided the cathode potential is referenced to the heatsink ground plane.

What is the maximum recommended case temperature for continuous 6 A operation?

The datasheet specifies IF = 6 A is rated at TC ≤ 145 °C with D = 1 (continuous duty). Operation above this case temperature requires derating per Figure 2 (IF = f(TC)). At TC = 155 °C, maximum sustainable current drops to ~5.2 A to maintain Tj ≤ 175 °C.

Does IDH06G65C6XKSA1 require gate driving or external biasing?

No. As a Schottky barrier diode, IDH06G65C6XKSA1 is a passive two-terminal device with no gate terminal. It conducts when anode voltage exceeds cathode voltage by ≥ VF, and blocks when reverse biased - no control signals, drivers, or bias networks are needed.

How does its reverse leakage compare to silicon diodes at 150 °C?

At VR = 420 V and Tj = 150 °C, IDH06G65C6XKSA1 exhibits IR = 46 µA - approximately 1/100th the leakage of a comparable 650 V silicon fast recovery diode (typically >5 mA), significantly reducing standby losses in solar and UPS applications.