Infineon Technologies IDH08G120C5XKSA1

Overview

IDH08G120C5XKSA1 from Infineon Technologies is a 5th Generation CoolSiC™ 1200 V, 8 A silicon carbide Schottky diode in PG-TO220-2-1 package, featuring zero reverse recovery charge, 28 nC total capacitive charge at 800 V/150°C, and 175°C maximum junction temperature. It serves as a high-efficiency freewheeling or boost diode in high-voltage DC-link circuits of solar inverters and industrial motor drives.

For engineers reviewing the IDH08G120C5XKSA1 datasheet, IDH08G120C5XKSA1 pinout, IDH08G120C5XKSA1 application, or IDH08G120C5XKSA1 equivalent, key selection criteria include its 1200 V V_RRM, temperature-independent switching, tight V_F distribution (1.65–1.95 V @ 8 A/25°C), dv/dt ruggedness (150 V/ns), and qualified JEDEC reliability for industrial power conversion.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-efficiency topologies by eliminating reverse recovery current and associated switching losses. Its unipolar conduction mechanism ensures stable V_F across –55°C to 175°C and enables operation at elevated case temperatures up to 151°C with 8 A continuous current.

The device exhibits low stored charge (Q_C = 28 nC) and voltage-dependent capacitance (20 pF @ 800 V), supporting reduced EMI and snubberless designs. Its R_th(j-c) of 0.92–1.19 K/W and 70 A non-repetitive surge rating (10 ms, 25°C) support robust operation under transient overloads in PFC and inverter stages.

Key Specifications

Pinout & Package

Package: PG-TO220-2-1 - insulated plastic housing with metal tab (cathode-connected backside) and two leads; designed for screw-mount mechanical stability and thermal transfer via M3/M4 screws (0.7 Nm torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D08065E-TR and STPSC8H12D, IDH08G120C5XKSA1 uniquely combines 1200 V rating, ultra-low Q_C, and tight V_F tolerance in a screw-mount package-enabling higher power density and reliability in industrial 1000 V+ systems without redesigning mechanical interfaces.

Availability

IDH08G120C5XKSA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for IDH08G120C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDH08G120C5XKSA1 belongs to the CoolSiC™ 5th Generation family, engineered specifically for high-efficiency, high-reliability power conversion in 1200 V industrial systems where thermal robustness and switching performance are critical.

FAQ

Is IDH08G120C5XKSA1 suitable for paralleling multiple devices in high-current PFC designs?

Yes. Its tight forward voltage distribution (±0.15 V at 8 A/25°C) and positive temperature coefficient of V_F enable stable current sharing without external ballasting resistors. Thermal coupling via shared heatsink further improves balance, making it suitable for multi-phase totem-pole PFC modules up to 50 kW.

What is the recommended heatsink mounting procedure for PG-TO220-2-1 package?

Mount using M3 or M4 screws with 0.7 Nm torque on the metal tab (cathode). Apply thermal interface material between tab and heatsink; use an insulating washer if the heatsink is grounded. Avoid mechanical stress on Pin 2 (anode) during assembly-only the tab provides primary thermal conduction.

Does IDH08G120C5XKSA1 require a gate resistor or snubber circuit in typical inverter applications?

No. As a Schottky diode with no minority-carrier storage, it does not generate reverse recovery spikes. Its specified 150 V/ns dv/dt ruggedness eliminates need for snubbers in standard IGBT-based inverters. Gate resistors are irrelevant-this is a two-terminal passive device with no control terminal.

How does the 175°C maximum junction temperature impact system derating compared to 150°C Si diodes?

It allows 25°C higher junction operation, reducing required heatsink size by ~35% at same power loss. For example, at 8 A/1200 V, thermal resistance budget increases from 0.8 K/W (for 150°C-rated Si) to 1.19 K/W (IDH08G120C5XKSA1), enabling smaller, lower-cost thermal solutions in enclosed industrial enclosures.