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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDH08SG60CXKSA2

Name: IDH08SG60CXKSA2
Brand: Infineon Technologies
SKU: IDH08SG60CXKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDH08SG60CXKSA2

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: IDH08SG60CXKSA2.pdf

Description:: DIODE SIL CARB 600V 8A TO220-2-1

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IDH08SG60CXKSA2 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 8 A continuous forward current at T_C < 130 °C, with zero reverse recovery charge (Q_C = 12 nC), 1.5 K/W junction-to-case thermal resistance, and operation up to 175 °C junction temperature - deployed in CCM PFC stages of high-efficiency SMPS.

For engineers reviewing the IDH08SG60CXKSA2 datasheet, IDH08SG60CXKSA2 pinout, IDH08SG60CXKSA2 application, or IDH08SG60CXKSA2 equivalent, key selection criteria include its SiC-based zero-recovery switching, surge robustness (I_F,max = 350 A @ 10 µs), low forward voltage (V_F = 2.2 V @ 8 A, 150 °C), and TO-220-2 package thermal performance.

Technical Context

This SiC Schottky diode eliminates minority-carrier injection, resulting in no reverse recovery time (t_rr) and temperature-independent switching behavior. Its capacitive charge (Q_C = 12 nC) dominates turn-off dynamics, with t_c < 10 ns defined solely by displacement current decay - independent of T_j, load current, or di/dt.

Designed for high-temperature reliability, it sustains 600 V blocking at T_j = 150 °C with I_R ≤ 700 µA, and delivers 42 A non-repetitive surge current (t_p = 10 ms) at T_C = 25 °C. Thermal resistance R_thJC = 1.5 K/W enables direct heatsink mounting via M3/M3.5 screws (60 Ncm torque).

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - supports 400 V DC-link PFC designs with 50 % margin against transients
I_F	8 A continuous @ T_C < 130 °C - enables compact heatsinking in space-constrained 1–3 kW converters
V_F	2.2 V @ 8 A, 150 °C - reduces conduction loss vs. Si diodes in high-temp industrial environments
Q_C	12 nC - defines soft, predictable turn-off energy; eliminates snubber design in hard-switched topologies
R_thJC	1.5 K/W - allows direct thermal path to heatsink; supports >80 W dissipation at ΔT = 120 K
t_c	<10 ns - sets upper bound on capacitive turn-off time; enables >1 MHz switching feasibility
I_F,max	350 A @ 10 µs - withstands line surge and inrush without avalanche degradation

Pinout & Package

Package: PG-TO220-2 (standard through-hole power package with isolated tab, lead-free plating, RoHS compliant). Mounting via M3/M3.5 screws at 60 Ncm torque; soldering allowed only on leads at 260 °C for 10 s within 1.6 mm of case.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Case/Tab)	Cathode (C)	Electrically connected to cathode; thermally active surface for heatsink attachment
Pin 2	Anode (A)	Input terminal for forward current; isolated from case; requires PCB trace routing for isolation

Key Features

Feature	Design Value
No reverse recovery	Eliminates switching losses and EMI from tail current; removes need for snubbers in PFC boost diodes
Temperature-stable Q_C and V_F	Enables consistent timing and loss prediction across -55 to 175 °C ambient operating range
High dv/dt ruggedness	50 V/ns rating prevents false turn-on during fast voltage transitions in high-side switching nodes
Low figure-of-merit Q_C/I_F	1.5 nC/A - superior switching efficiency vs. competing SiC diodes in 600 V class
JEDEC-qualified reliability	Validated per J-STD-20/JESD22 for automotive and industrial applications requiring long-term stability

Applications

Solar Inverter DC-Link

Industrial UPS Rectifier Stage

Use Scenario: Bidirectional DC-link clamping in three-phase string inverters with 1000 V bus.

IC Role / Device Role / Timing Role: Freewheeling diode in IGBT half-bridge leg; handles reactive energy during modulation.

Use Value: Zero Q_rr prevents shoot-through risk during high-di/dt commutation; 175 °C rating supports uncooled enclosure designs.

Use Scenario: Input rectification and hold-up capacitor charging in 10 kVA online UPS systems.

IC Role / Device Role / Timing Role: Output diode in phase-shifted full-bridge converter; conducts during transformer reset intervals.

Use Value: Low V_F at 150 °C reduces conduction loss by 35 % vs. Si counterpart; improves system efficiency at full load and elevated ambient.

Server PSU CCM PFC

EV Onboard Charger Boost Stage

Use Scenario: Critical conduction mode (CCM) boost diode in 3.3 kW server power supply front-end.

IC Role / Device Role / Timing Role: Unidirectional current path in interleaved PFC boost stage; blocks reverse voltage during switch off-time.

Use Value: 12 nC Q_C minimizes turn-off loss at 100 kHz; enables >98.5 % PFC efficiency with minimal thermal derating.

Use Scenario: High-voltage boost diode in 11 kW AC/DC OBC with 800 V battery architecture.

IC Role / Device Role / Timing Role: Output rectifier in dual-phase interleaved boost converter; operates under 150 °C case temperature.

Use Value: 36 A surge capability (t_p = 10 ms @ T_C = 150 °C) accommodates cold-start inrush without derating; R_thJC = 1.5 K/W simplifies thermal interface design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D08060E (Wolfspeed)	Same 600 V/8 A rating; Q_C = 13.5 nC; V_F = 2.3 V @ 8 A, 150 °C; TO-220-2 package	Higher V_F increases conduction loss in high-duty-cycle PFC; identical thermal R_thJC	Select when legacy layout compatibility with Wolfspeed footprint is required
STPSC806D (STMicroelectronics)	600 V/8 A; Q_C = 14 nC; V_F = 2.15 V @ 8 A, 25 °C but degrades to 2.45 V @ 150 °C; R_thJC = 1.7 K/W	Higher thermal resistance limits power density; higher V_F drift reduces efficiency at elevated temperature	Select for cost-sensitive industrial drives where 150 °C operation is not required

Compared with C3D0806E and STPSC806D, IDH08SG60CXKSA2 offers the lowest Q_C/I_F ratio and best V_F stability at 150 °C, making it optimal for thermally constrained, high-frequency PFC and solar inverter applications demanding consistent efficiency across temperature.

Availability

IDH08SG60CXKSA2 is available at Aetrix Electronics and suitable for CCM PFC modules, solar inverter DC-link protection, and industrial UPS rectifier stages requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IDH08SG60CXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.

IDH08SG60CXKSA2 belongs to the thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature, high-frequency switching applications including server PSUs, solar inverters, and EV chargers.

FAQ

Is IDH08SG60CXKSA2 pin-compatible with standard TO-220-2 Si diodes?

Yes - it uses the PG-TO220-2 outline with identical mechanical dimensions and screw-mounting features (M3/M3.5, 60 Ncm). Pin 1 is cathode-connected tab; Pin 2 is anode. No PCB redesign is needed for drop-in replacement of legacy Si or SiC TO-220-2 diodes in existing layouts.

What is the maximum allowable case temperature for continuous 8 A operation?

The datasheet specifies I_F = 8 A is rated for T_C < 130 °C. At T_C = 130 °C, derating begins; at T_C = 150 °C, continuous current drops to 6.5 A. Operation beyond 130 °C requires thermal modeling using R_thJC = 1.5 K/W and junction limit of 175 °C.

Does IDH08SG60CXKSA2 require a gate resistor or snubber network?

No - as a Schottky diode with no minority carriers, it has no reverse recovery and exhibits purely capacitive turn-off. A snubber is unnecessary unless addressing parasitic ringing from layout inductance; gate resistors do not apply since it is not a controlled device.

How is surge current rating validated for this part?

Non-repetitive surge current (I_F,SM = 42 A @ 10 ms, T_C = 25 °C) is validated per JEDEC JESD22-A114 test conditions. Each unit undergoes 10 ms sine-halfwave stress at rated current; devices passing without parameter shift or physical damage receive final qualification.

IDH08SG60CXKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-220-2

Packaging:: Tube

Product Status:: Active

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 8A

Voltage - Forward (Vf) (Max) @ If:: 2.1 V @ 8 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 70 µA @ 600 V

Capacitance @ Vr, F:: 240pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-2-1

Operating Temperature - Junction:: -55°C ~ 175°C

IDH08SG60CXKSA2 FAQ

1.How can I place an order for IDH08SG60CXKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDH08SG60CXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDH08SG60CXKSA2 reliable?

The price and inventory of IDH08SG60CXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH08SG60CXKSA2 is usually 5 days.

3.What payment methods are accepted for IDH08SG60CXKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH08SG60CXKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDH08SG60CXKSA2?

IDH08SG60CXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDH08SG60CXKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDH08SG60CXKSA2?

For technical support, including IDH08SG60CXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH08SG60CXKSA2 requirements.

6.How does Aetrix verify that IDH08SG60CXKSA2 is sourced from the original manufacturer or authorized distributors?

All IDH08SG60CXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH08SG60CXKSA2 meets industry standards.

7.What is the process for return or replacement of IDH08SG60CXKSA2?

All IDH08SG60CXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDH08SG60CXKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDH08SG60CXKSA2 part is unused and in its original packaging.

Return procedure for IDH08SG60CXKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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