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Infineon Technologies IDH10G120C5XKSA1
- Part No.:
- IDH10G120C5XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
IDH10G120C5XKSA1.pdf
- Description:
- DIODE SIL CARB 1.2KV 10A TO220-1
- Quantity:
- Payment:
- Shipping:
Inventory:1,175
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Product details
Overview
IDH10G120C5XKSA1 from Infineon Technologies is a 5th Generation CoolSiC™ 1200 V, 10 A silicon carbide Schottky diode in PG-TO220-2-1 package, featuring zero reverse recovery charge, 41 nC total capacitive charge at 800 V/150°C, and 175°C maximum junction temperature. It serves as a high-efficiency freewheeling or boost diode in high-voltage DC-link applications such as solar inverters and industrial motor drives.
For engineers reviewing the IDH10G120C5XKSA1 datasheet, IDH10G120C5XKSA1 pinout, IDH10G120C5XKSA1 application, or IDH10G120C5XKSA1 equivalent, key selection criteria include its 1200 V VRRM, temperature-independent switching behavior, tight VF distribution (1.5–1.8 V @ 10 A/25°C), dv/dt ruggedness of 150 V/ns, and qualified JEDEC reliability for industrial power control.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-efficiency power conversion stages. Its unipolar conduction eliminates minority-carrier storage, enabling true zero Qrr, no forward recovery overshoot, and stable switching losses across –55°C to 175°C operating range.
The device operates with fixed anode–cathode polarity and requires direct thermal mounting via the case (cathode-connected backside). Its 0.91 K/W typical Rth(j–c) supports high-power dissipation up to 165 W at TC = 25°C, while surge capability reaches 99 A (10 ms, TC = 25°C) without degradation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - blocks full DC-link voltage in 1000 V-class solar and UPS systems |
| IF | 10 A continuous @ TC = 155°C - rated for sustained conduction in thermally constrained enclosures |
| QC | 41 nC @ VR = 800 V, Tj = 150°C - determines turn-off energy loss in hard-switched converters |
| VF | 1.8 V max @ IF = 10 A, Tj = 150°C - enables low conduction loss even at elevated temperatures |
| Rth(j–c) | 0.91 K/W typ - allows efficient heat transfer to heatsink with minimal thermal interface resistance |
| dv/dt | 150 V/ns - withstands rapid voltage transients in high-dV/dt gate-drive environments |
| IF,SM | 99 A @ 10 ms, TC = 25°C - supports short-term overload during grid faults or startup surges |
Pinout & Package
Package: PG-TO220-2-1 - insulated plastic housing with metal tab (cathode-connected backside) and two leads; designed for screw-mount thermal interface and PCB through-hole assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 + Backside Tab | Cathode | Electrically common terminal; must be directly mounted to heatsink with electrically insulating but thermally conductive interface |
| Pin 2 | Anode | Input terminal for forward current flow; connects to switching node or inductor output in boost/freewheeling topologies |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery current (Qrr = 0) | Eliminates switching loss and EMI associated with tail current in Si FRDs |
| Tight VF distribution (±0.15 V @ 10 A/25°C) | Enables parallel operation without current imbalance or derating |
| Specified dv/dt ruggedness (150 V/ns) | Guarantees reliable blocking during fast voltage transitions in SiC half-bridges |
| Extended surge capability (99 A, 10 ms) | Supports fault ride-through in industrial UPS and PFC without external crowbar protection |
| Pb-free, RoHS-compliant plating | Meets global environmental compliance requirements for industrial and renewable energy equipment |
Applications
| Solar Inverter Boost Stage | Industrial UPS DC-Link |
|---|---|
Use Scenario: High-efficiency DC–DC boost stage stepping up PV array voltage to 1000 V DC bus. IC Role / Device Role / Timing Role: Freewheeling diode in interleaved boost converter, conducting during low-side switch off-time. Use Value: Zero Qrr reduces turn-off loss by >70% vs. Si FRD, enabling 50 kHz+ switching and smaller magnetics. | Use Scenario: Bidirectional DC-link clamping in double-conversion UPS with 1200 V bus. IC Role / Device Role / Timing Role: Anti-parallel diode for IGBTs, providing regenerative path and voltage clamping during line sags. Use Value: 175°C Tj,max and robust dv/dt rating ensure stable operation during frequent transient events. |
| Motor Drive Inverter Output | Active Front-End PFC |
Use Scenario: Regenerative braking path in 3-phase inverter feeding induction motors up to 30 kW. IC Role / Device Role / Timing Role: Reverse-conducting path during PWM dead-time and overmodulation conditions. Use Value: Low VF drift with temperature maintains efficiency across ambient range (–40°C to +70°C). | Use Scenario: High-power active front-end rectifier in server PSU or telecom rectifier with >3 kW output. IC Role / Device Role / Timing Role: Boost diode in three-phase Vienna or totem-pole PFC topology. Use Value: 41 nC QC minimizes turn-off loss at 100 kHz, improving PF correction efficiency above 99%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D10120A (Wolfspeed) | Same 1200 V/10 A rating; 0.85 K/W Rth(j–c); 45 nC QC @ 800 V | Requires tighter thermal interface due to higher Rth(j–c); slightly higher turn-off loss | Preferred where legacy Wolfspeed footprint compatibility is required |
| STPSC10H12D (STMicroelectronics) | 1200 V/10 A; 1.0 K/W Rth(j–c); 43 nC QC; lower surge rating (85 A) | Limited surge margin in high-fault industrial environments | Suitable for cost-sensitive designs with moderate transient exposure |
Compared with C3D10120A and STPSC10H12D, IDH10G120C5XKSA1 offers superior thermal resistance (0.91 K/W), highest surge rating (99 A), and tighter VF distribution-making it optimal for mission-critical industrial power converters demanding long-term reliability under thermal and electrical stress.
Availability
IDH10G120C5XKSA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, industrial motor drives, and active front-end PFC circuits requiring stable component supply and long-lifecycle support.
Supply support for IDH10G120C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in wide-bandgap devices and industrial system solutions.
IDH10G120C5XKSA1 belongs to the CoolSiC™ 5th Generation family, engineered specifically for high-efficiency, high-reliability industrial power conversion where thermal stability, surge robustness, and zero-recovery performance are critical.
FAQ
Is IDH10G120C5XKSA1 suitable for paralleling multiple units?
Yes. Its tight forward voltage distribution (±0.15 V at 10 A/25°C) and positive temperature coefficient of VF enable stable current sharing without external balancing resistors. Parallel operation is validated in Infineon's application note AN2019-07 for multi-kW solar boost stages.
What is the recommended thermal interface material for the cathode tab?
A thermally conductive, electrically insulating pad (e.g., Bergquist Sil-Pad 2000S) or ceramic washer with thermal conductivity ≥1.5 W/m·K is recommended. Mounting torque must be 0.7 Nm for M3/M4 screws to ensure uniform pressure and avoid die cracking.
Does IDH10G120C5XKSA1 require a snubber circuit in hard-switched topologies?
No snubber is required for typical 100–200 kHz operation due to its 150 V/ns dv/dt ruggedness and absence of reverse recovery. However, a small RC snubber (e.g., 100 Ω + 100 pF) may be used near layout discontinuities to suppress high-frequency ringing from parasitic inductance.
Can IDH10G120C5XKSA1 replace a 1200 V Si fast recovery diode directly?
Yes, in most cases-but gate drive timing must be reviewed. Unlike Si FRDs, this SiC diode has no reverse recovery delay, so dead-time can be reduced by 20–50 ns. Layout must minimize stray inductance to avoid voltage overshoot during diode commutation.
IDH10G120C5XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1.8 V @ 10 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 62 µA @ 1200 V
- Capacitance @ Vr, F:
- 525pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-2-1
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDH10G120C5XKSA1 FAQ
1.How can I place an order for IDH10G120C5XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDH10G120C5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDH10G120C5XKSA1 reliable?
The price and inventory of IDH10G120C5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH10G120C5XKSA1 is usually 5 days.
3.What payment methods are accepted for IDH10G120C5XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH10G120C5XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDH10G120C5XKSA1?
IDH10G120C5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDH10G120C5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDH10G120C5XKSA1?
For technical support, including IDH10G120C5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH10G120C5XKSA1 requirements.
6.How does Aetrix verify that IDH10G120C5XKSA1 is sourced from the original manufacturer or authorized distributors?
All IDH10G120C5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH10G120C5XKSA1 meets industry standards.
7.What is the process for return or replacement of IDH10G120C5XKSA1?
All IDH10G120C5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDH10G120C5XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDH10G120C5XKSA1 part is unused and in its original packaging.
Return procedure for IDH10G120C5XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDH10G120C5XKSA1 Tags
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