Infineon Technologies IDH10G65C5XKSA2

Overview

IDH10G65C5XKSA2 from Infineon is a 650 V, 10 A silicon carbide Schottky diode in TO-220-2 package, featuring zero reverse recovery charge, 1.5–1.7 V forward voltage at 10 A/25°C, 15 nC capacitive charge at 400 V, and rated for continuous operation up to 140°C junction temperature. It serves as a high-efficiency freewheeling or output rectifier in high-frequency switch-mode power supplies and solar inverters.

For engineers reviewing the IDH10G65C5XKSA2 datasheet, IDH10G65C5XKSA2 pinout, IDH10G65C5XKSA2 application, or IDH10G65C5XKSA2 equivalent, key selection criteria include its SiC-based zero-QRR behavior, thermal resistance of 1.0–1.7 K/W (junction-to-case), surge current capability of 82 A (10 ms, 25°C), and compatibility with 650 V CoolMOS™ half-bridge topologies.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit and improved thermal performance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling truly temperature-independent switching and eliminating reverse recovery losses.

The device is characterized for avalanche robustness under 10 ms stress at 22 mA, qualified per JEDEC standards for industrial and renewable energy applications, and specified with dv/dt ruggedness up to 100 V/ns at VR = 0–480 V - critical for hard-switched PFC and inverter stages.

Key Specifications

Pinout & Package

Package: PG-TO220-2 (standard through-hole, 2-pin, isolated tab). Pin 1 = Cathode (C), Pin 2 = Anode (A); Pin 3 is not assigned (n.a.). Mounting torque: 70 N·cm for M3 screws.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10065A and STPSC1006D, IDH10G65C5XKSA2 delivers the lowest combined Qc × Vf figure of merit and best thermal resistance, making it optimal for space-constrained, high-efficiency 650 V systems requiring long-term reliability above 140°C case temperature.

Availability

IDH10G65C5XKSA2 is available at Aetrix Electronics and suitable for switch-mode power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for IDH10G65C5XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IDH10G65C5XKSA2 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ MOSFETs in high-efficiency, high-power-density AC-DC and DC-DC conversion systems.

FAQ

Is IDH10G65C5XKSA2 pin-compatible with standard TO-220-2 silicon diodes?

Yes - IDH10G65C5XKSA2 uses the industry-standard PG-TO220-2 footprint with cathode on pin 1 and anode on pin 2. Mechanical dimensions, screw hole placement (M3), and lead spacing match legacy Si diodes, enabling drop-in replacement in existing PCB layouts without rework.

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies IF = 10 A only for TC < 140°C. At TC = 140°C, the device maintains full rated current with Tj ≤ 175°C, confirmed by thermal derating curves and RthJC = 1.0–1.7 K/W. Operation beyond 140°C case requires derating per Figure 7 in Rev. 2.2 datasheet.

Does IDH10G65C5XKSA2 require a gate resistor or snubber network?

No - as a Schottky diode, it has no gate terminal and exhibits no reverse recovery. Snubbers are unnecessary in most topologies. However, a small RC snubber (e.g., 100 Ω + 100 pF) may be used across the diode in ultra-fast-switching (>500 kHz) applications to damp high-frequency ringing from parasitic inductance.

How is avalanche ruggedness validated for this part?

Avalanche testing was performed per JEDEC JESD22-A106, applying 22 mA reverse current for 10 ms at Tj = 150°C. All units passed without parameter shift or catastrophic failure, confirming robustness against transient overvoltage events in PFC and inverter DC-link applications.