Infineon Technologies IDH10G65C6XKSA1

Overview

IDH10G65C6XKSA1 from Infineon is a 650 V, 10 A silicon carbide (SiC) Schottky barrier diode in PG-TO220-2 package, optimized for high-frequency PFC and solar inverter applications. It delivers VF = 1.25 V at 10 A/25 °C, Qc = 14.7 nC at 400 V, and dv/dt ruggedness of 150 V/ns, enabling reduced conduction and switching losses.

For engineers reviewing the IDH10G65C6XKSA1 datasheet, IDH10G65C6XKSA1 pinout, IDH10G65C6XKSA1 application, or IDH10G65C6XKSA1 equivalent, this device is selected for high-efficiency 650 V SiC rectification where low forward voltage, low capacitive charge, and industrial-grade thermal robustness (Tj up to 175 °C) are critical.

Technical Context

This 6th-generation CoolSiC™ diode uses an enhanced Schottky metal system over G5, achieving lower Qc × VF figure of merit. Its unipolar structure eliminates reverse recovery charge (Qrr ≈ 0), enabling zero-recovery switching in hard-commutated topologies like Totem-Pole PFC.

The device operates with RthJC = 1.3–2.1 K/W and supports continuous IF = 10 A at TC ≤ 140 °C. Its 150 V/ns dv/dt rating ensures stable operation under fast voltage transients common in GaN/SiC half-bridge configurations.

Key Specifications

Pinout & Package

Package: PG-TO220-2 - Through-hole, isolated tab, single-die SiC Schottky diode with electrically isolated metal tab (pin 1 = cathode, pin 2 = anode).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10065A and STPSC10H065D, IDH10G65C6XKSA1 offers the lowest VF and best Qc × VF FoM, delivering superior full-load efficiency and thermal headroom-critical for space-constrained, high-power-density PFC and inverter designs.

Availability

IDH10G65C6XKSA1 is available at Aetrix Electronics and suitable for power factor correction, solar inverter DC-AC conversion, and uninterruptible power supply applications requiring stable component supply across multi-year production cycles.

Supply support for IDH10G65C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDH10G65C6XKSA1 belongs to the CoolSiC™ 6th Generation family, engineered specifically for high-efficiency, high-frequency rectification in 650 V systems where SiC's zero-Qrr and low VF deliver measurable system-level gains in power density and thermal management.

FAQ

Is IDH10G65C6XKSA1 pin-compatible with previous CoolSiC™ generations?

No. While all CoolSiC™ G6 diodes use PG-TO220-2, the internal die design and thermal interface differ from G5. Mechanical mounting is identical, but electrical performance-including VF, Qc, and dv/dt-is improved. Layout reuse is possible, but thermal simulation should be revalidated due to lower RthJC.

Can IDH10G65C6XKSA1 replace silicon fast recovery diodes directly?

Yes, in most cases-but with critical design checks. Its zero Qrr eliminates reverse recovery loss, yet its lower VF and higher dv/dt require verifying gate drive stability in co-switched MOSFETs. Snubber networks may be reduced or removed, but layout parasitics must be minimized to avoid oscillation.

What is the maximum allowable case temperature for continuous 10 A operation?

The datasheet specifies IF = 10 A at TC ≤ 140 °C with duty cycle D = 1. Exceeding 140 °C requires derating: at TC = 150 °C, max IF drops to ~8.5 A; at TC = 160 °C, it falls to ~6.2 A. Thermal design must ensure case temperature remains ≤140 °C under worst-case ambient and airflow conditions.

Does IDH10G65C6XKSA1 require special soldering or mounting procedures?

Yes. The PG-TO220-2 package requires M3 screw mounting with 70 Ncm torque and electrically insulating thermal interface material. Wave soldering is permitted only on leads (1.6 mm from case, 260 °C for 10 s). Reflow is not recommended. Avoid mechanical stress on leads during assembly to prevent die cracking.