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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDH10SG60CXKSA2

Name: IDH10SG60CXKSA2
Brand: Infineon Technologies
SKU: IDH10SG60CXKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDH10SG60CXKSA2

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: IDH10SG60CXKSA2.pdf

Description:: DIODE SIL CARB 600V 10A TO220-1

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Product details

Overview

IDH10SG60CXKSA2 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 10 A continuous forward current at T_C < 130 °C. It delivers zero reverse recovery charge (Q_C = 16 nC), <10 ns capacitive switching time (t_c), and operates up to 175 °C junction temperature. It is used in high-efficiency CCM PFC stages of server SMPS and solar string inverters.

For engineers reviewing the IDH10SG60CXKSA2 datasheet, IDH10SG60CXKSA2 pinout, IDH10SG60CXKSA2 application, or IDH10SG60CXKSA2 equivalent, key selection criteria include its SiC-based zero-recovery behavior, thermal resistance (R_thJC = 1.25 K/W), surge capability (I_F,max = 410 A), low forward voltage (V_F = 1.8–2.2 V), and TO-220-2 package compatibility with industrial heatsinking.

Technical Context

This SiC Schottky diode eliminates minority-carrier injection, resulting in no reverse recovery time (t_rr) or associated switching losses. Its capacitive displacement current dominates switching behavior, with t_c < 10 ns independent of junction temperature, load current, or di/dt.

Thermal performance is defined by R_thJC = 1.25 K/W and maximum T_j = 175 °C, enabling stable operation in high-power-density converters. The device's Q_C/I_F figure of merit is optimized for high-frequency PFC and DC-link applications where efficiency and thermal management are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - supports 400 V AC input rectification with 50% safety margin in 3-phase PFC
I_F (cont.)	10 A @ T_C < 130 °C - enables compact heatsink design in 1–3 kW power stages
V_F	1.8–2.2 V @ 10 A - reduces conduction loss vs. Si diodes by ~30% at 150 °C
Q_C	16 nC - eliminates reverse recovery loss, critical for >100 kHz CCM PFC designs
t_c	<10 ns - defines fast capacitive turn-off edge, minimizing EMI generation
R_thJC	1.25 K/W - allows direct mounting to heatsink with predictable thermal drop
I_F,max	410 A @ 10 µs - withstands line surge and inrush without failure in UPS/solar inverters

Pinout & Package

Package: PG-TO220-2 (standard through-hole, isolated tab, 2-pin configuration). Mounting torque: 60 N·cm for M3/M3.5 screws. Soldering allowed only on leads at 1.6 mm from case for 10 s at 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Case/Tab)	Cathode (C)	Electrically connected to cathode; thermally conductive metal tab for heatsink mounting
Pin 2	Anode (A)	Input terminal for forward current flow; isolated lead for PCB routing

Key Features

Feature	Design Value
No reverse recovery	Zero t_rr and Q_rr - eliminates switching loss and diode-induced voltage spikes in hard-switched topologies
Temperature-stable switching	t_c < 10 ns invariant across –55 to +175 °C - ensures consistent EMI profile over full operating range
High surge robustness	∫i²dt = 13 A²s @ 25 °C - sustains repeated line transients in grid-tied solar inverters
Low Q_C/I_F FoM	1.6 nC/A - benchmark SiC performance for high-frequency, high-efficiency PFC stages
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 - validated for automotive-adjacent industrial power applications

Applications

Server-Scale CCM PFC

Solar String Inverter DC Link

Use Scenario: Continuous Conduction Mode boost PFC stage in 2–3 kW telecom/server PSUs operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Output rectifier replacing Si fast recovery diode; handles bidirectional current during zero-voltage switching transitions.

Use Value: Eliminates reverse recovery loss, reducing total system loss by 0.5–0.8% and enabling smaller magnetics and heatsinks.

Use Scenario: DC-link freewheeling path in 5–10 kW string inverters with 1000 V bus and 15 kHz IGBT switching.

IC Role / Device Role / Timing Role: Anti-parallel diode for IGBTs; clamps inductive kickback during turn-off with minimal voltage overshoot.

Use Value: Suppresses voltage spikes beyond 650 V due to absence of t_rr, improving IGBT reliability and reducing snubber size.

Industrial UPS Rectifier

Motor Drive Brake Chopper

Use Scenario: Input rectifier in double-conversion 10–30 kVA UPS systems with active front-end topology.

IC Role / Device Role / Timing Role: High-current AC input bridge leg; conducts 10 A RMS with 410 A surge tolerance during utility dips.

Use Value: Maintains conduction integrity under 10 ms surges without thermal runaway, extending system uptime.

Use Scenario: Regenerative braking path in 7.5–15 kW servo drives with 400–690 V AC mains input.

IC Role / Device Role / Timing Role: Freewheeling diode across brake resistor switch; handles 100% motor back-EMF energy dump pulses.

Use Value: Withstands 175 °C junction temperature during repeated braking cycles, avoiding derating or forced cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D10065A	650 V V_RRM, 10 A I_F, R_thJC = 1.3 K/W, Q_C = 21 nC	Higher V_RRM margin but 31% higher Q_C; less efficient in 100–150 kHz PFC	Prefer when 650 V rating is required for 480 V AC systems with high transient stress
SS10P6	600 V V_RRM, 10 A I_F, Si-based, t_rr = 35 ns, V_F = 2.8 V @ 150 °C	Reverse recovery causes 2.5× higher switching loss; requires larger heatsink	Only consider if cost sensitivity outweighs efficiency and thermal constraints

Compared with C3D10065A and SS10P6, IDH10SG60CXKSA2 offers the lowest Q_C/I_F ratio and best thermal resistance among 600 V SiC diodes in TO-220-2, making it optimal for space-constrained, high-frequency PFC and inverter applications demanding minimal conduction and switching loss.

Availability

IDH10SG60CXKSA2 is available at Aetrix Electronics and suitable for server SMPS, solar string inverters, and industrial UPS systems requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IDH10SG60CXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies.

IDH10SG60CXKSA2 belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature, high-frequency power conversion in industrial and renewable energy systems.

FAQ

Is IDH10SG60CXKSA2 RoHS compliant and lead-free?

Yes. The device features Pb-free lead plating and is fully RoHS compliant per EU Directive 2011/65/EU. Lead-free soldering is supported on leads only, with maximum temperature of 260 °C for 10 seconds at 1.6 mm from the case.

What is the maximum allowable junction temperature and how is it enforced?

The absolute maximum junction temperature is 175 °C. Operation beyond this limit risks permanent degradation. Thermal design must ensure R_thJC × (P_tot − P_cond) + T_C ≤ 175 °C, using the published R_thJC = 1.25 K/W and derated P_tot curves.

Does IDH10SG60CXKSA2 require a gate driver or external control circuitry?

No. As a passive uncontrolled diode, it requires no gate drive, biasing, or control signals. It conducts when anode voltage exceeds cathode voltage by ≥ V_F, and blocks when reverse biased - no active circuitry needed.

Can IDH10SG60CXKSA2 replace standard silicon diodes in existing designs without layout changes?

Yes, in most cases - it uses the same PG-TO220-2 footprint and pinout (cathode tab, anode lead). However, reduced switching loss may require re-optimization of snubbers and EMI filters, and thermal interface material should be verified for 1.25 K/W R_thJC.

IDH10SG60CXKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-220-2

Packaging:: Tube

Product Status:: Active

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 10A

Voltage - Forward (Vf) (Max) @ If:: 2.1 V @ 10 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 90 µA @ 600 V

Capacitance @ Vr, F:: 290pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-2-1

Operating Temperature - Junction:: -55°C ~ 175°C

IDH10SG60CXKSA2 FAQ

1.How can I place an order for IDH10SG60CXKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDH10SG60CXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDH10SG60CXKSA2 reliable?

The price and inventory of IDH10SG60CXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH10SG60CXKSA2 is usually 5 days.

3.What payment methods are accepted for IDH10SG60CXKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH10SG60CXKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDH10SG60CXKSA2?

IDH10SG60CXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDH10SG60CXKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDH10SG60CXKSA2?

For technical support, including IDH10SG60CXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH10SG60CXKSA2 requirements.

6.How does Aetrix verify that IDH10SG60CXKSA2 is sourced from the original manufacturer or authorized distributors?

All IDH10SG60CXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH10SG60CXKSA2 meets industry standards.

7.What is the process for return or replacement of IDH10SG60CXKSA2?

All IDH10SG60CXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDH10SG60CXKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDH10SG60CXKSA2 part is unused and in its original packaging.

Return procedure for IDH10SG60CXKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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