Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDH12G65C5XKSA1

Name: IDH12G65C5XKSA1
Brand: Infineon Technologies
SKU: IDH12G65C5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IDH12G65C5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: IDH12G65C5XKSA1.pdf

Description:: DIODE SIL CARB 650V 12A TO220-2

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,253

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IDH12G65C5XKSA1 from Infineon is a 650 V, 12 A silicon carbide Schottky diode in TO-220-2 package, featuring zero reverse recovery charge, 18 nC capacitive charge at 400 V, 1.5–2.1 V forward voltage across 25–150 °C, and 104 W power dissipation at 25 °C case temperature. It operates reliably up to 175 °C junction temperature and is qualified per JEDEC standards for high-efficiency switch-mode power supplies and solar inverters.

For engineers reviewing the IDH12G65C5XKSA1 datasheet, IDH12G65C5XKSA1 pinout, IDH12G65C5XKSA1 application, or IDH12G65C5XKSA1 equivalent, this SiC diode delivers verified thermal robustness (R_thJC = 0.9–1.5 K/W), surge current capability (97 A @ 10 ms, T_C = 25 °C), and temperature-independent switching behavior critical for PFC and UPS designs.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Q_C × V_F figure of merit and improved thermal resistance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling true zero reverse recovery and stable dv/dt ruggedness up to 100 V/ns.

The device is optimized as a high-frequency freewheeling or boost diode paired with 650 V CoolMOS™ MOSFETs. Its 650 V V_RRM, 175 °C max junction temperature, and 360–47 pF capacitance (1–600 V) support operation in hard-switched topologies with minimal EMI generation and reduced snubber requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	650 V - Rated blocking voltage ensures safe operation in 400 V AC input PFC and 600 V DC bus solar inverters.
I_F (T_C < 140 °C)	12 A - Continuous forward current rating defines maximum steady-state conduction without derating at heatsink temperatures below 140 °C.
Q_C @ V_R = 400 V	18 nC - Capacitive charge directly impacts turn-on losses in synchronous rectification and determines gate drive energy requirements.
V_F @ I_F = 12 A	1.5–2.1 V - Forward voltage range across 25–150 °C enables predictable conduction loss modeling in thermal simulation.
R_thJC	0.9–1.5 K/W - Junction-to-case thermal resistance governs heatsink sizing and sets upper bound on allowable power dissipation at given T_C.
I_F,SM @ t_p = 10 ms	97 A @ 25 °C - Non-repetitive surge rating validates short-circuit withstand in UPS and motor drive clamp circuits.
C @ V_R = 600 V	47 pF - Reverse-biased capacitance value determines resonant frequency with circuit inductance and influences EMI filter design.

Pinout & Package

Package: PG-TO220-2 (2-pin, isolated tab), lead-free, RoHS-compliant, with mounting torque specification of 70 Ncm for M3 screws.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Cathode	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference requires cathode tie.
Pin 2	Anode	Standard anode terminal; connects to switching node (e.g., MOSFET drain in boost PFC) for unidirectional current flow.
Pin 3	n.a.	No connection - mechanical dummy pin not used for electrical function; omitted in TO-220-2 footprint.

Key Features

Feature	Design Value
Zero reverse recovery charge (Q_rr = 0)	Eliminates commutation losses and associated EMI spikes during hard switching, enabling >100 kHz operation without snubbers.
Temperature-independent switching	Forward voltage and switching characteristics remain stable from –55 °C to 175 °C, simplifying control loop compensation across ambient extremes.
High surge current capability (97 A, 10 ms)	Withstands line transients and inrush events in industrial UPS and grid-tied solar inverters without derating or external protection.
Low Q_C × V_F figure of merit	Combines low capacitive charge (18 nC) and moderate V_F (1.5–2.1 V) to minimize total conduction + switching loss across full load range.
JEDEC-qualified reliability	Validated per J-STD-020 and JESD22 for moisture sensitivity, temperature cycling, and avalanche stress-ensuring field longevity in mission-critical power systems.

Applications

Switch Mode Power Supply

Power Factor Correction

Use Scenario: High-density AC/DC adapter with active PFC front-end operating at 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Freewheeling diode in continuous conduction mode (CCM) boost converter stage.

Use Value: Zero Q_rr reduces turn-off losses by >95% versus Si FRD, lowering MOSFET stress and enabling smaller heatsinks.

Use Scenario: Three-phase industrial PFC module for server rack PSUs requiring >98% efficiency at full load.

IC Role / Device Role / Timing Role: Output rectifier in interleaved boost stage synchronized to 65 kHz carrier.

Use Value: Stable V_F over temperature prevents current imbalance between parallel phases, improving thermal margin and reliability.

Solar Inverter

Uninterruptible Power Supply

Use Scenario: String-level DC/AC conversion in 10 kW photovoltaic inverter with 16 kHz PWM modulation.

IC Role / Device Role / Timing Role: Anti-parallel diode across IGBTs in H-bridge output stage.

Use Value: 175 °C max T_j and low R_thJC allow direct mounting to shared heatsink with IGBTs, reducing thermal interface count and system cost.

Use Scenario: Online double-conversion UPS with battery backup, operating continuously at 40 °C ambient.

IC Role / Device Role / Timing Role: Boost diode in DC link pre-regulator feeding inverter stage.

Use Value: 97 A surge rating handles 200% overload for 10 seconds without degradation, meeting UL 1778 hold-time requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D10065A (Wolfspeed)	Same 650 V/10 A rating but TO-247-2L package; higher V_F (1.7–2.3 V) and Q_C (22 nC).	Larger footprint and higher thermal resistance (R_thJC = 1.7 K/W) limit use in space-constrained TO-220 layouts.	Select when higher surge rating (110 A) justifies larger package and added cost.
STPSC12065DL (STMicroelectronics)	12 A/650 V in TO-220AC; slightly lower V_F (1.4–2.0 V) but higher Q_C (24 nC) and no JEDEC qualification data published.	Lower conduction loss at light loads but increased switching loss above 50 kHz due to higher Q_C.	Select for cost-sensitive designs where JEDEC qualification is not mandated and EMI filtering budget allows.

Compared with C3D10065A and STPSC12065DL, IDH12G65C5XKSA1 offers the lowest Q_C × V_F product in TO-220-2, JEDEC-validated reliability, and optimal thermal performance for compact, high-reliability PFC and solar applications.

Availability

IDH12G65C5XKSA1 is available at Aetrix Electronics and suitable for switch-mode power supplies, power factor correction circuits, and solar inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IDH12G65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride power devices.

IDH12G65C5XKSA1 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ MOSFETs in high-frequency, high-efficiency power conversion systems.

FAQ

Is IDH12G65C5XKSA1 pin-compatible with standard TO-220-2 silicon diodes?

Yes - it uses the same PG-TO220-2 mechanical outline and pin assignment (cathode tab, anode lead), allowing direct PCB footprint reuse. However, its higher dv/dt ruggedness (100 V/ns) and absence of reverse recovery require verification of gate driver layout and snubber design to avoid false triggering in half-bridge configurations.

What is the maximum recommended case temperature for continuous 12 A operation?

The datasheet specifies I_F = 12 A is rated for T_C < 140 °C. At T_C = 140 °C, junction temperature reaches 175 °C (max), leaving no thermal margin. For reliable long-term operation, maintain T_C ≤ 125 °C using appropriate heatsinking and airflow to ensure <150 °C T_j.

Does IDH12G65C5XKSA1 require a negative gate voltage or special driving circuitry?

No - as a diode, it has no gate and requires no drive circuitry. Its anode and cathode terminals connect directly in series with the power path. The only design considerations are thermal interface quality to the heatsink (due to isolated tab) and layout parasitics affecting high-di/dt transient response.

How is avalanche robustness validated for IDH12G65C5XKSA1?

All units undergo 10 ms avalanche stress testing at rated V_RRM with I_F = 27 mA per JEDEC JESD22-A106. This verifies ability to absorb inductive energy without parametric shift or catastrophic failure, supporting use in flyback and LLC resonant converters where voltage overshoot may occur.

IDH12G65C5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-220-2

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 650 V

Current - Average Rectified (Io):: 12A

Voltage - Forward (Vf) (Max) @ If:: 1.7 V @ 12 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 190 µA @ 650 V

Capacitance @ Vr, F:: 360pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-2

Operating Temperature - Junction:: -55°C ~ 175°C

IDH12G65C5XKSA1 FAQ

1.How can I place an order for IDH12G65C5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDH12G65C5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDH12G65C5XKSA1 reliable?

The price and inventory of IDH12G65C5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH12G65C5XKSA1 is usually 5 days.

3.What payment methods are accepted for IDH12G65C5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH12G65C5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDH12G65C5XKSA1?

IDH12G65C5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDH12G65C5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDH12G65C5XKSA1?

For technical support, including IDH12G65C5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH12G65C5XKSA1 requirements.

6.How does Aetrix verify that IDH12G65C5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IDH12G65C5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH12G65C5XKSA1 meets industry standards.

7.What is the process for return or replacement of IDH12G65C5XKSA1?

All IDH12G65C5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDH12G65C5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDH12G65C5XKSA1 part is unused and in its original packaging.

Return procedure for IDH12G65C5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…