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Infineon Technologies IDH12G65C5XKSA2
- Part No.:
- IDH12G65C5XKSA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
IDH12G65C5XKSA2.pdf
- Description:
- DIODE SIL CARB 650V 12A TO220-1
- Quantity:
- Payment:
- Shipping:
Inventory:850
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Product details
Overview
IDH12G65C5XKSA2 from Infineon is a 650 V, 12 A silicon carbide Schottky diode in TO-220-2 package, featuring zero reverse recovery charge, 1.5–2.1 V forward voltage (12 A, 25–150°C), 18 nC capacitive charge at 400 V, and 175°C max junction temperature - deployed in high-frequency PFC stages of industrial SMPS and solar inverters.
For engineers reviewing the IDH12G65C5XKSA2 datasheet, IDH12G65C5XKSA2 pinout, IDH12G65C5XKSA2 application, or IDH12G65C5XKSA2 equivalent, key selection criteria include its SiC-based zero-Qrr behavior, thermal resistance of 0.9–1.5 K/W (junction-to-case), surge capability up to 97 A (10 ms), and RoHS-compliant Pb-free plating.
Technical Context
This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower figure-of-merit (Qc × Vf) and improved thermal performance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 175°C with stable switching characteristics across temperature.
The device is rated for 650 V repetitive peak reverse voltage and exhibits temperature-independent switching - reverse current remains below 1.35 mA at 650 V and 150°C, while forward voltage increases only marginally from 1.5 V (25°C) to 2.1 V (150°C) at 12 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - supports DC-link voltages up to 600 V in 3-phase PFC and solar string inverters |
| IF (TC < 140°C) | 12 A continuous - enables compact heatsink design in 3–5 kW power stages |
| VF @ 12 A, 25°C | 1.5–1.7 V - reduces conduction loss vs. Si fast recovery diodes by ~30% |
| Qc @ VR=400 V | 18 nC - eliminates reverse recovery loss, enabling >100 kHz switching without snubbers |
| RthJC | 0.9–1.5 K/W - allows direct mounting to heatsinks with predictable thermal path for thermal design |
| Tj max | 175°C - supports operation in sealed industrial enclosures without forced air cooling |
| dv/dt ruggedness | 100 V/ns - withstands high dv/dt transients in hard-switched bridge legs without false turn-on |
Pinout & Package
Package: PG-TO220-2 (2-pin, isolated tab), lead-free, RoHS compliant. Pin 1 = Cathode (C), Pin 2 = Anode (A). Pin 3 is not assigned (n.a.). The metal tab is electrically connected to the cathode and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Cathode) | High-side return path | Connected to DC-link capacitor negative or inverter leg low-side switch source - carries full load current and must be routed with low-inductance layout |
| Pin 2 (Anode) | Switching node connection | Interfaces directly with MOSFET/IGBT drain/collector in synchronous rectification or boost PFC - requires tight coupling to minimize parasitic ringing |
| Metal tab | Thermal & electrical cathode extension | Provides low-thermal-resistance path to heatsink and must be insulated if mounting to grounded chassis; electrically identical to Pin 1 |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery charge (Qrr = 0) | Eliminates switching loss and EMI associated with tail current in Si diodes - enables clean hard-switching at 200 kHz+ |
| Temperature-stable VF and IR | Forward voltage rise ≤0.6 V from 25°C to 150°C at 12 A; reverse leakage stays <1.35 mA up to 150°C - simplifies thermal derating |
| High surge current rating (97 A, 10 ms) | Withstands inrush and overload transients in UPS and grid-tied inverters without derating or external fusing |
| Optimized Qc × Vf figure of merit | Lower conduction + capacitive switching loss than Gen 3/4 SiC diodes - improves full-load efficiency in 3–6 kW systems by 0.4–0.8% |
Applications
| Industrial Switch-Mode Power Supply | Solar String Inverter |
|---|---|
Use Scenario: Boost PFC front-end operating at 100–200 kHz with 400 V DC-link. IC Role / Device Role / Timing Role: Unidirectional freewheeling diode in continuous conduction mode (CCM) boost stage. Use Value: Zero Qrr eliminates snubber losses and reduces MOSFET voltage stress during turn-off, enabling smaller EMI filters and higher power density. | Use Scenario: DC-side anti-islanding protection and MPPT-stage freewheeling in 5–10 kW string inverters. IC Role / Device Role / Timing Role: High-voltage output rectifier handling bidirectional fault currents and steady-state string current. Use Value: 175°C rating allows direct mounting on inverter heatsink without thermal interface degradation; 650 V VRRM supports 1000 V PV open-circuit voltage derating. |
| Uninterruptible Power Supply | Three-Phase Motor Drive |
Use Scenario: Output rectification and battery charging path in double-conversion online UPS with 380–400 V DC-bus. IC Role / Device Role / Timing Role: Bidirectional conduction path during line/battery transfer and regeneration braking. Use Value: Low forward voltage drop reduces conduction loss in both directions; high surge rating handles 10× overload during battery recharge transients. | Use Scenario: Freewheeling path in IGBT-based 3-level NPC inverter for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Clamping diode in neutral-point clamped topology, conducting during dead-time and regenerative energy return. Use Value: Stable dv/dt ruggedness (100 V/ns) prevents spurious turn-on during high-speed IGBT switching; low capacitance (360 pF @ 1 V) minimizes displacement current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D10065A (Wolfspeed) | Same 650 V/10 A rating; 1.7 V VF @ 10 A, 25°C; 15 nC Qc; TO-220-2 package | Rated for 10 A (vs. 12 A); slightly lower Qc but higher VF - better for ultra-high-frequency designs where capacitive loss dominates | Select when prioritizing <15 nC Qc over 12 A current handling; verify thermal margin at 140°C case temp |
| STPSC12065DLF (STMicroelectronics) | 650 V/12 A; 1.6 V VF @ 12 A, 25°C; 22 nC Qc; TO-220AC package (non-isolated tab) | Non-isolated tab requires insulating washer; higher Qc increases switching loss at >150 kHz | Prefer for cost-sensitive industrial drives where isolation is managed externally and frequency ≤120 kHz |
Compared with C3D10065A and STPSC12065DLF, IDH12G65C5XKSA2 delivers the highest current rating in TO-220-2 with balanced Qc/Vf trade-off and guaranteed isolated tab - optimal for thermally constrained, high-reliability PFC and inverter designs requiring 12 A continuous conduction.
Availability
IDH12G65C5XKSA2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar string inverters, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for IDH12G65C5XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
IDH12G65C5XKSA2 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to pair with 650 V CoolMOS™ power devices in high-efficiency, high-power-density AC-DC and DC-AC conversion systems.
FAQ
Is IDH12G65C5XKSA2 pin-compatible with earlier Infineon SiC diodes like IDH08G65C5?
No. IDH12G65C5XKSA2 uses the same PG-TO220-2 package as IDH08G65C5, but its higher 12 A rating requires enhanced thermal design and layout - the pinout is identical (Pin 1 = Cathode, Pin 2 = Anode), yet thermal vias and copper area must be scaled to handle 25% more power dissipation.
What is the maximum recommended case temperature for continuous operation?
The datasheet specifies IF = 12 A only for TC < 140°C. At TC = 140°C, thermal resistance RthJC (max 1.5 K/W) limits junction temperature to 175°C under worst-case conditions. For reliable 12 A operation, maintain TC ≤ 135°C with adequate heatsinking and airflow.
Does IDH12G65C5XKSA2 require a gate resistor or snubber network?
No gate resistor is needed - it is a passive diode. However, a small RC snubber (e.g., 10 Ω + 100 pF) across anode-cathode is recommended in high-di/dt applications (>500 A/µs) to dampen voltage overshoot caused by stray inductance, especially when paralleled with fast-switching MOSFETs.
Can IDH12G65C5XKSA2 be used in parallel configurations?
Yes, but with strict layout symmetry: matched trace lengths, shared heatsink plane, and individual Kelvin sensing for current balancing. Due to positive VF temperature coefficient, current sharing improves with temperature - however, mismatched thermal paths can cause >20% current imbalance at full load, requiring derating to 10 A per device in parallel.
IDH12G65C5XKSA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 12A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 12 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 190 µA @ 650 V
- Capacitance @ Vr, F:
- 360pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-2-1
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDH12G65C5XKSA2 FAQ
1.How can I place an order for IDH12G65C5XKSA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDH12G65C5XKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDH12G65C5XKSA2 reliable?
The price and inventory of IDH12G65C5XKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH12G65C5XKSA2 is usually 5 days.
3.What payment methods are accepted for IDH12G65C5XKSA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH12G65C5XKSA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDH12G65C5XKSA2?
IDH12G65C5XKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDH12G65C5XKSA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDH12G65C5XKSA2?
For technical support, including IDH12G65C5XKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH12G65C5XKSA2 requirements.
6.How does Aetrix verify that IDH12G65C5XKSA2 is sourced from the original manufacturer or authorized distributors?
All IDH12G65C5XKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH12G65C5XKSA2 meets industry standards.
7.What is the process for return or replacement of IDH12G65C5XKSA2?
All IDH12G65C5XKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDH12G65C5XKSA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDH12G65C5XKSA2 part is unused and in its original packaging.
Return procedure for IDH12G65C5XKSA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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