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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDH12SG60CXKSA2

Name: IDH12SG60CXKSA2
Brand: Infineon Technologies
SKU: IDH12SG60CXKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDH12SG60CXKSA2

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: IDH12SG60CXKSA2.pdf

Description:: DIODE SIL CARB 600V 12A TO220-1

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Product details

Overview

IDH12SG60CXKSA2 from Infineon Technologies is a 3rd-generation silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 12 A continuous forward current at T_C < 130 °C. It delivers zero reverse recovery charge, <10 ns capacitive switching time, and 19 nC total capacitive charge-enabling high-efficiency, high-frequency operation in CCM PFC stages of server SMPS.

For engineers reviewing the IDH12SG60CXKSA2 datasheet, IDH12SG60CXKSA2 pinout, IDH12SG60CXKSA2 application, or IDH12SG60CXKSA2 equivalent, key selection criteria include its temperature-independent switching behavior, 1.2 K/W junction-to-case thermal resistance, surge capability up to 430 A (10 µs), and RoHS-compliant Pb-free lead plating.

Technical Context

This SiC Schottky diode operates without minority carrier injection, eliminating reverse recovery losses and associated EMI. Its static forward voltage is 1.8–2.1 V at 12 A and 25 °C, rising to 2.2 V at 150 °C-demonstrating stable conduction across industrial temperature range.

Capacitance is voltage-dependent: 310 pF at 1 V, dropping to 50 pF at both 300 V and 600 V (1 MHz). The diode's dv/dt ruggedness is rated at 50 V/ns under 0–480 V transition, supporting robust operation in fast-switching hard-commutated topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - supports 400 V DC-link designs with 50% voltage margin for transient clamping
I_F	12 A continuous - enables compact heatsinking in 3–5 kW PFC modules
V_F	1.8–2.1 V @ 12 A, 25 °C - reduces conduction loss vs. Si FRD by ~40% at same current
Q_C	19 nC - minimizes turn-off energy loss in high-frequency (>100 kHz) switching
R_thJC	1.2 K/W - allows direct mounting to heatsink with predictable thermal path for thermal design
t_c	<10 ns - defines capacitive displacement current decay time; no trr due to majority-carrier operation
I_F,max	430 A @ 10 µs - withstands short-circuit events in motor drive DC-link protection

Pinout & Package

Supplied in PG-TO220-2 package with isolated mounting base. Case (Pin 1) is cathode; Pin 2 is anode. Mounting screw torque: 60 Ncm for M3/M3.5 screws.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Case)	Cathode	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference requires common-cathode configuration
Pin 2	Anode	Leads to internal SiC die anode; carries full load current during forward conduction; low-inductance layout critical for dv/dt performance

Key Features

Feature	Design Value
No reverse recovery	Eliminates trr-related switching loss and EMI generation in hard-switched converters
Temperature-independent switching	Capacitive switching time t_c remains stable from –55 °C to 175 °C-no derating needed for timing-critical gate drive circuits
High surge current capability	59 A non-repetitive surge at T_C = 25 °C (10 ms) supports inrush current handling in UPS input rectification
Low Q_C/I_F figure of merit	19 nC / 12 A = 1.58 nC/A - industry-leading efficiency metric for high-frequency PFC diodes
JEDEC-qualified reliability	Qualified per J-STD-20 and JESD22 for automotive and industrial applications requiring long-term bias stability

Applications

Server-Scale CCM PFC

Solar Inverter DC-Link

Use Scenario: Continuous Conduction Mode (CCM) boost PFC stage in 3.5 kW telecom rectifier operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Freewheeling diode in boost output stage; conducts during MOSFET off-time with zero reverse recovery.

Use Value: Enables >98.5% system efficiency by eliminating reverse recovery loss and reducing snubber requirements.

Use Scenario: DC-link freewheeling path in 15 kW string inverter with 800 V nominal bus voltage.

IC Role / Device Role / Timing Role: Bidirectional blocking device during IGBT commutation; sustains 600 V with <1 µA leakage at 150 °C.

Use Value: Reduces thermal stress on IGBTs by limiting voltage overshoot during turn-off via low stored capacitance energy (E_C = 8 µJ @ 600 V).

Industrial UPS Rectifier

EV Onboard Charger Boost Stage

Use Scenario: Input rectifier front-end in 10 kVA double-conversion UPS with 480 V AC input.

IC Role / Device Role / Timing Role: Output diode in 3-phase active rectifier; handles 51 A surge at 150 °C for 10 ms during overload transients.

Use Value: Maintains uninterrupted power delivery without thermal runaway during sustained overloads due to flat I_F-T_j derating curve.

Use Scenario: Boost diode in 6.6 kW OBC operating in interleaved dual-phase PFC mode at 150 kHz.

IC Role / Device Role / Timing Role: High-speed unidirectional switch in high-side boost leg; blocks 600 V while conducting 12 A with 2.2 V V_F at 150 °C.

Use Value: Enables smaller magnetics and reduced filter size through stable high-frequency operation without trr-induced ringing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D10060A (Wolfspeed)	Same 600 V / 10 A rating; higher V_F (1.9–2.3 V); R_thJC = 1.5 K/W	Larger footprint (TO-247-2); less suitable for space-constrained TO-220 layouts	Prefer when higher surge margin required; avoid if thermal interface resistance dominates system R_thJA
STPSC1206D (STMicroelectronics)	600 V / 12 A; V_F = 1.7–2.0 V; Q_C = 22 nC; R_thJC = 1.3 K/W	Higher Q_C increases turn-off loss in >150 kHz designs; slightly better V_F at cold start	Select for cost-sensitive industrial drives where 3 nC Q_C penalty is acceptable for lower BOM cost

Compared with C3D10060A and STPSC1206D, IDH12SG60CXKSA2 offers the lowest Q_C/I_F ratio (1.58 nC/A) and tightest V_F distribution-making it optimal for thermally constrained, high-frequency PFC where switching loss dominates efficiency.

Availability

IDH12SG60CXKSA2 is available at Aetrix Electronics and suitable for server power supplies, solar inverters, and industrial UPS systems requiring stable component supply, JEDEC-qualified reliability, and consistent SiC performance across temperature.

Supply support for IDH12SG60CXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy infrastructure markets.

IDH12SG60CXKSA2 belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency power conversion in CCM PFC, solar inverters, and UPS systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies continuous forward current I_F = 12 A is rated for T_C < 130 °C. At T_C = 130 °C, derating begins linearly to zero at 175 °C junction temperature. Thermal design must ensure case temperature stays below 130 °C under full load to maintain rated current.

Does this diode require a gate driver or external control signal?

No. IDH12SG60CXKSA2 is an uncontrolled two-terminal power diode with no gate terminal. It conducts automatically when anode voltage exceeds cathode voltage by >V_F, and blocks when reverse biased-requiring no driver, biasing, or control logic.

Can it replace a silicon fast recovery diode in an existing design?

Yes-with layout review. Its zero reverse recovery eliminates snubber networks, but its lower V_F and faster dv/dt demand careful PCB routing to avoid parasitic oscillation. Also verify that the 600 V V_RRM meets system overvoltage margin requirements before drop-in replacement.

Is the PG-TO220-2 package electrically isolated?

No. In the PG-TO220-2 package, the metal tab (Pin 1/case) is electrically connected to the cathode. Electrical isolation from the heatsink requires insulating hardware (e.g., silicone pad + shoulder washer) unless the cathode is system ground or shares reference potential with the heatsink.

IDH12SG60CXKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-220-2

Packaging:: Tube

Product Status:: Active

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 12A

Voltage - Forward (Vf) (Max) @ If:: 2.1 V @ 12 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 100 µA @ 600 V

Capacitance @ Vr, F:: 310pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-2-1

Operating Temperature - Junction:: -55°C ~ 175°C

IDH12SG60CXKSA2 FAQ

1.How can I place an order for IDH12SG60CXKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDH12SG60CXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDH12SG60CXKSA2 reliable?

The price and inventory of IDH12SG60CXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH12SG60CXKSA2 is usually 5 days.

3.What payment methods are accepted for IDH12SG60CXKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH12SG60CXKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDH12SG60CXKSA2?

IDH12SG60CXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDH12SG60CXKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDH12SG60CXKSA2?

For technical support, including IDH12SG60CXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH12SG60CXKSA2 requirements.

6.How does Aetrix verify that IDH12SG60CXKSA2 is sourced from the original manufacturer or authorized distributors?

All IDH12SG60CXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH12SG60CXKSA2 meets industry standards.

7.What is the process for return or replacement of IDH12SG60CXKSA2?

All IDH12SG60CXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDH12SG60CXKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDH12SG60CXKSA2 part is unused and in its original packaging.

Return procedure for IDH12SG60CXKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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