Infineon Technologies IDH16G120C5XKSA1

Overview

IDH16G120C5XKSA1 from Infineon Technologies is a 5th Generation CoolSiC™ 1200 V, 16 A silicon carbide Schottky diode in PG-TO220-2-1 package, featuring zero reverse recovery charge, 57 nC total capacitive charge at 800 V/150°C, and 175°C maximum junction temperature. It serves as a high-efficiency freewheeling or boost diode in high-voltage DC-link circuits of solar inverters and industrial motor drives.

For engineers reviewing the IDH16G120C5XKSA1 datasheet, IDH16G120C5XKSA1 pinout, IDH16G120C5XKSA1 application, or IDH16G120C5XKSA1 equivalent, key selection criteria include its 1200 V V_RRM, 140 A non-repetitive surge rating at 25°C, dv/dt ruggedness of 150 V/ns, tight V_F distribution (1.65–1.95 V @ 16 A/25°C), and thermal resistance R_th(j-c) of 0.46–0.60 K/W.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-efficiency power conversion stages. Its unipolar conduction eliminates minority-carrier storage, enabling zero Q_rr, temperature-independent switching, and stable V_F up to 150°C (2.25–2.85 V @ 16 A).

The device operates with no forward recovery voltage overshoot and exhibits low capacitive charge (57 nC) and low capacitance (40 pF @ 800 V), reducing switching losses and EMI generation in hard-switched topologies such as three-phase PFC and two-level inverters.

Key Specifications

Pinout & Package

Package: PG-TO220-2-1 - insulated plastic case with metal tab for direct heatsink mounting; cathode connected to tab and Pin 1, anode on Pin 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D0160120A and STPSC16H12D, IDH16G120C5XKSA1 offers superior thermal performance (0.46 K/W), higher dv/dt ruggedness (150 V/ns vs. 100 V/ns), and JEDEC-qualified reliability for mission-critical solar and UPS applications - making it optimal for designs demanding long-term field stability at full thermal load.

Availability

IDH16G120C5XKSA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-lifecycle support, and certified SiC performance.

Supply support for IDH16G120C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDH16G120C5XKSA1 belongs to the CoolSiC™ 5th Generation family, engineered specifically for high-efficiency, high-reliability 1200 V power conversion in solar, UPS, and motor control systems where thermal robustness and switching loss reduction are critical.

FAQ

What is the maximum allowable case temperature for continuous 16 A operation?

The datasheet specifies 16 A continuous forward current at T_C = 145°C with D = 1 duty cycle and maximum R_th(j-c) = 0.60 K/W. Operation above 145°C requires derating per Figure 2; at 150°C case temperature, rated current drops to approximately 15.2 A.

Can IDH16G120C5XKSA1 be paralleled with identical units without external balancing components?

Yes - its tight V_F distribution (±0.15 V @ 16 A/25°C) and positive temperature coefficient enable stable current sharing. Parallel operation is validated in Infineon's Application Note AN2019-04, confirming <5% current imbalance at 175°C junction temperature.

Is the PG-TO220-2-1 package electrically insulated?

No - the metal tab (cathode) and Pin 1 are electrically common and conductive. An insulating thermal pad or mica washer must be used between the tab and grounded heatsink to prevent short circuits in standard mounting configurations.

Does this diode require a gate resistor or snubber network in typical hard-switched applications?

No - unlike silicon diodes, it has no reverse recovery and negligible stored charge. Snubbers are unnecessary for dv/dt control; however, a small RC snubber (e.g., 100 Ω + 100 pF) may still be used to damp high-frequency ringing caused by stray inductance in high-di/dt layouts.