Infineon Technologies IDH16G65C5XKSA2

Overview

IDH16G65C5XKSA2 from Infineon is a 650 V, 16 A silicon carbide Schottky diode in TO-220-2 package, featuring zero reverse recovery charge, 1.5–1.7 V forward voltage at 16 A/25°C, 23 nC capacitive charge at 400 V, and rated for continuous operation up to 135°C case temperature. It serves as a high-efficiency freewheeling or output rectifier in high-frequency switch-mode power supplies.

For engineers reviewing the IDH16G65C5XKSA2 datasheet, IDH16G65C5XKSA2 pinout, IDH16G65C5XKSA2 application, or IDH16G65C5XKSA2 equivalent, key selection criteria include its SiC-based zero-recovery behavior, thermal resistance of 0.7–1.2 K/W (junction-to-case), surge current capability of 124 A (10 ms, 25°C), and compatibility with 650 V CoolMOS™ half-bridge topologies.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit and improved thermal performance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 175°C junction temperature without recovery-related switching losses.

The device exhibits temperature-independent switching behavior and dv/dt ruggedness of 100 V/ns under 0–480 V reverse bias. Its capacitance drops from 470 pF at 1 V to 60 pF at 600 V (1 MHz), supporting high-frequency PFC and solar inverter designs where EMI reduction and efficiency at light load are critical.

Key Specifications

Pinout & Package

Package: PG-TO220-2 (standard through-hole, 2-pin, isolated tab). Pin 1 = Cathode (C), Pin 2 = Anode (A). Pin 3 is not assigned (n.a.). The metal tab is electrically connected to the cathode and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D16065E and STPSC16065D, IDH16G65C5XKSA2 offers the lowest Qc × Vf product and integrated cathode-isolated TO-220-2 package, making it optimal for space-constrained, thermally demanding PFC and inverter applications where layout simplicity and thermal performance are prioritized.

Availability

IDH16G65C5XKSA2 is available at Aetrix Electronics and suitable for power factor correction, solar inverter DC-link, and uninterruptible power supply applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IDH16G65C5XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

IDH16G65C5XKSA2 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power stages in high-efficiency, high-power-density AC-DC and DC-AC conversion systems.

FAQ

Is IDH16G65C5XKSA2 pin-compatible with standard TO-220-2 silicon diodes?

Yes - it uses the industry-standard PG-TO220-2 footprint with 2.54 mm lead pitch and M3 mounting hole. Pin 1 (cathode) and Pin 2 (anode) align with JEDEC TO-220AB mechanical dimensions, enabling drop-in replacement in existing layouts designed for Si diodes, provided thermal and electrical margins are verified.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies IF = 16 A is rated for TC < 135°C. Operation above this temperature reduces allowable current linearly per the derating curve in Figure 7; at TC = 150°C, maximum continuous current is approximately 12.5 A to maintain Tj ≤ 175°C with RthJC,max = 1.2 K/W.

Does IDH16G65C5XKSA2 require a gate driver or external control circuitry?

No - as a passive unipolar Schottky diode, it operates without any control signal or gate drive. It conducts when anode voltage exceeds cathode voltage by >VF and blocks when reverse biased, with no timing, sequencing, or logic interface requirements.

How does its reverse leakage compare to silicon diodes at elevated temperature?

At 650 V and 150°C, IR is 3.2–1400 µA - significantly lower than typical Si fast recovery diodes (>100 µA at 125°C), and orders of magnitude below Si PIN diodes. This enables stable blocking in high-temperature environments without thermal runaway risk in series-connected arrays.