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Infineon Technologies IDH16G65C6XKSA1
- Part No.:
- IDH16G65C6XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
IDH16G65C6XKSA1.pdf
- Description:
- DIODE SIL CARB 650V 34A TO220-2
- Quantity:
- Payment:
- Shipping:
Inventory:3,011
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Product details
Overview
IDH16G65C6XKSA1 from Infineon is a 650 V, 16 A silicon carbide Schottky diode in PG-TO220-2 package, optimized for high-frequency PFC and solar inverter boost stages. It delivers VF = 1.25 V at 16 A/25 °C, Qc = 21.5 nC at 400 V, and dv/dt ruggedness of 150 V/ns, enabling reduced conduction and switching losses in hard-switched topologies.
For engineers reviewing the IDH16G65C6XKSA1 datasheet, IDH16G65C6XKSA1 pinout, IDH16G65C6XKSA1 application, or IDH16G65C6XKSA1 equivalent, key selection criteria include forward voltage consistency across temperature, capacitive charge at high dv/dt, thermal resistance (RthJC = 0.9–1.6 K/W), and industrial-grade JEDEC qualification for 175 °C junction operation.
Technical Context
This SiC Schottky diode replaces silicon fast recovery diodes in high-efficiency AC-DC and DC-DC converters. Its zero reverse recovery charge eliminates turn-off losses and EMI associated with minority-carrier devices, while its low Qc × VF figure of merit directly improves system efficiency under partial-load conditions.
The device uses Infineon's 6th-generation CoolSiC™ process with a novel Schottky metal system and is specifically co-designed to pair with CoolMOS™ 7 600–650 V MOSFETs in interleaved PFC and two-level inverter stages, supporting >100 kHz switching without snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Withstands full bridge or boost stage DC-link voltages up to 650 V with margin. |
| IF (TC ≤ 135 °C) | 16 A - Continuous forward current rating at case temperature ≤135 °C, defining thermal design envelope. |
| VF (16 A, 25 °C) | 1.25 V - Low conduction loss enables <0.5 W conduction loss per diode at rated current. |
| Qc (400 V) | 21.5 nC - Low capacitive charge reduces switching loss and gate driver stress in high-dv/dt circuits. |
| dv/dt Ruggedness | 150 V/ns - Immune to false turn-on during fast voltage transients in hard-switched converters. |
| RthJC | 0.9–1.6 K/W - Enables direct heatsink mounting with predictable thermal path for power density optimization. |
| IR (420 V, 150 °C) | 123 µA - Ultra-low leakage preserves efficiency in high-temperature solar inverter environments. |
Pinout & Package
Package: PG-TO220-2, through-hole, isolated tab (cathode-connected case), M3 screw mount, 70 Ncm torque rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Case) | Cathode | Electrically connected to cathode; requires insulated mounting when cathode is not at chassis ground. |
| 2 | Anode | Primary current input terminal; connects to switching node in boost or bridge-leg configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Low VF at high Tj | VF = 1.5 V @ 16 A/150 °C - Maintains low conduction loss even at elevated junction temperatures. |
| Zero Qrr | No reverse recovery charge - Eliminates switching loss and associated EMI in hard-switched topologies. |
| JEDEC Industrial Qualification | Qualified per J-STD-20 & JESD22 - Validated for continuous operation at Tj = 175 °C in industrial environments. |
| High dv/dt Immunity | 150 V/ns - Prevents spurious conduction during fast voltage transitions in high-frequency inverters. |
Applications
| Power Factor Correction (PFC) | Solar Inverter Boost Stage |
|---|---|
Use Scenario: Interleaved continuous conduction mode (CCM) PFC in 3–5 kW server PSUs. IC Role / Device Role / Timing Role: Unidirectional freewheeling diode in boost rectifier stage, conducting during MOSFET off-time. Use Value: 1.25 V VF and 21.5 nC Qc reduce total losses by ~1.8 W vs. Si FRD, lowering heatsink size by 35%. | Use Scenario: DC-link boost stage in string inverters operating at 100 kHz switching frequency. IC Role / Device Role / Timing Role: High-side freewheeling diode in non-isolated boost converter feeding 600–800 V DC bus. Use Value: Zero Qrr and 150 V/ns dv/dt immunity eliminate snubber requirements and reduce EMI filter size by 40%. |
| Uninterruptible Power Supply (UPS) | Industrial Motor Drive Front-End |
Use Scenario: Bidirectional AC-DC/DC-AC front-end in online double-conversion UPS systems. IC Role / Device Role / Timing Role: Output rectifier in active rectifier stage, handling regenerative energy during battery charging. Use Value: 123 µA IR at 150 °C ensures minimal leakage loss during extended high-temperature backup operation. | Use Scenario: Input rectification and regeneration path in 7.5 kW variable frequency drives. IC Role / Device Role / Timing Role: Freewheeling diode in IGBT-based active front-end (AFE) with 120 °C ambient cooling. Use Value: RthJC = 0.9 K/W enables direct heatsink mounting without thermal interface pads, reducing thermal stack-up by 2 layers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D16065E (Wolfspeed) | VF = 1.5 V @ 16 A/25 °C; Qc = 24.5 nC @ 400 V; RthJC = 1.0 K/W | Higher VF increases conduction loss by ~0.4 W; higher Qc raises switching loss in >100 kHz designs | Prefer IDH16G65C6XKSA1 where <1.3 V VF and <22 nC Qc are critical for efficiency targets. |
| STPSC15H065D (STMicroelectronics) | VF = 1.35 V @ 16 A/25 °C; Qc = 23.0 nC @ 400 V; RthJC = 1.2 K/W | Higher thermal resistance limits power derating above 110 °C case temperature | Prefer IDH16G65C6XKSA1 for industrial designs requiring sustained 135 °C TC operation. |
Compared with C3D16065E and STPSC15H065D, IDH16G65C6XKSA1 offers the lowest VF and Qc combination in the 16 A/650 V class, delivering superior efficiency at partial load and enabling smaller thermal solutions in space-constrained industrial inverters.
Availability
IDH16G65C6XKSA1 is available at Aetrix Electronics and suitable for power factor correction, solar inverter boost stages, and uninterruptible power supply rectification requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.
Supply support for IDH16G65C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDH16G65C6XKSA1 belongs to the CoolSiC™ 6th Generation family, engineered to deliver best-in-class efficiency and ruggedness for high-frequency, high-reliability power conversion in solar, UPS, and industrial motor drive applications.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The IDH16G65C6XKSA1 is qualified for continuous operation up to Tj = 175 °C per JEDEC JESD22-A108 qualification testing. Its RthJC of 0.9–1.6 K/W and 16 A rating at TC ≤ 135 °C define the thermal boundary for sustained use in industrial environments without derating.
Is the TO-220-2 case electrically isolated from the anode or cathode?
The PG-TO220-2 package has the case internally connected to the cathode terminal (Pin 1). The anode (Pin 2) is electrically isolated from the case. Mounting requires electrical isolation unless the cathode node is referenced to chassis ground.
Does this diode require a gate resistor or external snubber network?
No. As a majority-carrier Schottky diode, IDH16G65C6XKSA1 has zero reverse recovery charge (Qrr = 0) and does not require snubbers or gate resistors. Its 150 V/ns dv/dt ruggedness ensures reliable operation in hard-switched converters without additional protection components.
How does the forward voltage change with temperature?
VF increases linearly with junction temperature: VF = 1.25 V @ 25 °C, 1.5 V @ 150 °C. This positive temperature coefficient supports inherent current sharing in parallel configurations and simplifies thermal management in multi-diode arrays.
IDH16G65C6XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 34A
- Voltage - Forward (Vf) (Max) @ If:
- 1.35 V @ 16 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 53 µA @ 420 V
- Capacitance @ Vr, F:
- 783pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDH16G65C6XKSA1 FAQ
1.How can I place an order for IDH16G65C6XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDH16G65C6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDH16G65C6XKSA1 reliable?
The price and inventory of IDH16G65C6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH16G65C6XKSA1 is usually 5 days.
3.What payment methods are accepted for IDH16G65C6XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH16G65C6XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDH16G65C6XKSA1?
IDH16G65C6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDH16G65C6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDH16G65C6XKSA1?
For technical support, including IDH16G65C6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH16G65C6XKSA1 requirements.
6.How does Aetrix verify that IDH16G65C6XKSA1 is sourced from the original manufacturer or authorized distributors?
All IDH16G65C6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH16G65C6XKSA1 meets industry standards.
7.What is the process for return or replacement of IDH16G65C6XKSA1?
All IDH16G65C6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDH16G65C6XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDH16G65C6XKSA1 part is unused and in its original packaging.
Return procedure for IDH16G65C6XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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