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Infineon Technologies IDH20G120C5XKSA1
- Part No.:
- IDH20G120C5XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
IDH20G120C5XKSA1.pdf
- Description:
- DIODE SIL CARB 1.2KV 56A TO220-1
- Quantity:
- Payment:
- Shipping:
Inventory:974
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Product details
Overview
IDH20G120C5XKSA1 from Infineon Technologies is a 5th Generation CoolSiC™ 1200 V, 20 A silicon carbide Schottky diode in PG-TO220-2-1 package, featuring zero reverse recovery charge, 82 nC total capacitive charge at 800 V/150°C, and 175°C maximum junction temperature - deployed as freewheeling or boost diode in high-efficiency 3-phase PFC stages of solar inverters.
For engineers reviewing the IDH20G120C5XKSA1 datasheet, IDH20G120C5XKSA1 pinout, IDH20G120C5XKSA1 application, or IDH20G120C5XKSA1 equivalent, key selection criteria include its 1200 V VRRM, 198 A IF,SM surge rating at TC=25°C, 0.46 K/W typical Rth(j-c), and dv/dt ruggedness of 150 V/ns - all critical for hard-switched industrial power converters operating above 50 kHz.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-voltage DC-link applications where zero Qrr eliminates switching losses during turn-off and enables synchronous rectification-like behavior without gate control. Its unipolar conduction mechanism ensures temperature-independent forward voltage rise and no minority-carrier storage delay.
The device operates with fixed anode–cathode polarity and requires direct thermal mounting via the backside cathode metal tab; its 150 V/ns dv/dt rating supports reliable operation under steep voltage transients in motor drive inverter legs and UPS H-bridge outputs without snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - blocks full DC-link voltage in 1000 V-class solar inverters and UPS systems |
| IF | 20 A continuous @ TC=150°C - supports 20 A RMS current in thermally constrained PFC boost stages |
| QC | 82 nC @ VR=800 V, Tj=150°C - defines stored capacitive energy affecting turn-on loss of paired IGBTs/MOSFETs |
| Rth(j-c) | 0.46 K/W typ - enables 330 W power dissipation with ≤100 K ΔT from junction to heatsink |
| Tj,max | 175°C - allows sustained operation at elevated ambient temperatures in enclosed industrial enclosures |
| dV/dt | 150 V/ns - withstands rapid voltage transients during IGBT commutation without false turn-on |
| IF,SM | 198 A @ tp=10 ms, TC=25°C - handles short-circuit current surges in grid-tied inverter fault conditions |
Pinout & Package
Package: PG-TO220-2-1 - insulated plastic case with electrically isolated mounting base; cathode connected to backside metal tab and Pin 1, anode on Pin 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode | Primary cathode connection; electrically tied to backside metal tab for low-inductance thermal and electrical path |
| Backside Tab | Cathode | Thermal interface and main current return path; must be mounted to heatsink with dielectric isolation if system ground referenced |
| Pin 2 | Anode | High-side connection point for boost inductor or inverter leg; routed with minimal loop area to reduce EMI |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery (Qrr = 0) | Eliminates turn-off switching loss and associated EMI in hard-switched topologies |
| 175°C max junction temperature | Enables compact thermal design with reduced heatsink mass in space-constrained industrial drives |
| 150 V/ns dv/dt ruggedness | Prevents spurious conduction during fast IGBT voltage transitions without external snubbers |
| 82 nC capacitive charge (QC) | Reduces turn-on loss of complementary switch by limiting displacement current stress |
| Tight VF distribution | Ensures consistent current sharing in parallel-connected diode configurations |
Applications
| Solar Inverter Boost Stage | UPS Inverter Output Stage |
|---|---|
Use Scenario: High-frequency boost converter operating at 50–100 kHz in string inverters with 1000 V DC-link. IC Role / Device Role / Timing Role: Freewheeling diode conducting during MOSFET/IGBT off-time; handles 20 A average forward current with 198 A surge capability. Use Value: Zero Qrr reduces system losses by >30% vs. Si FRD, enabling >99% peak efficiency at 50 kW scale. | Use Scenario: Three-level NPC inverter output stage in double-conversion UPS with 750–1000 V DC bus. IC Role / Device Role / Timing Role: Clamping and freewheeling diode in neutral-point clamped legs; rated for 150 V/ns dv/dt transients. Use Value: Eliminates need for RC snubbers, reducing BOM count and improving reliability over 10-year field life. |
| Motor Drive Inverter Leg | PFC Front-End Module |
Use Scenario: 1200 V, 30 kW servo drive inverter with 10 kHz PWM and regenerative braking. IC Role / Device Role / Timing Role: Anti-parallel diode across SiC MOSFETs; conducts reverse recovery current during commutation - which is zero. Use Value: Enables 10 kHz operation without excessive heating, cutting magnetics volume by 40% vs. Si-based designs. | Use Scenario: Active 3-phase PFC rectifier in industrial power supply with 400–690 V AC input. IC Role / Device Role / Timing Role: Boost diode in interleaved Vienna rectifier; sustains 20 A continuous current at TC=135°C. Use Value: Low VF drift with temperature maintains efficiency >98.5% across full load and ambient range (-25°C to +70°C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 1200 V SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D02060E | 650 V rating, 20 A, TO-220-2 package; lower VRRM and higher QC (105 nC) | Restricted to 650 V DC-link systems; unsuitable for 1000 V+ solar/UPS | Select only for cost-sensitive 650 V PFC where voltage margin is ≥20% |
| STPSC20H12D | 1200 V, 20 A, TO-220AC; higher VF (1.95 V typ @ 20 A/25°C), 0.55 K/W Rth(j-c) | Higher conduction loss and thermal resistance limit power density in compact designs | Acceptable for lower-frequency (<30 kHz) designs where heatsink size is not constrained |
Compared with C3D02060E and STPSC20H12D, IDH20G120C5XKSA1 delivers superior voltage rating margin, lowest thermal resistance, and lowest QC - making it optimal for high-frequency, high-power-density 1200 V industrial converters requiring long-term reliability and minimal EMI.
Availability
IDH20G120C5XKSA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, motor drives, and industrial PFC modules requiring stable component supply and JEDEC-qualified reliability.
Supply support for IDH20G120C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDH20G120C5XKSA1 belongs to the CoolSiC™ family - engineered specifically for high-efficiency, high-voltage power conversion systems demanding zero-recovery performance, high-temperature operation, and robust dv/dt immunity.
FAQ
Is IDH20G120C5XKSA1 RoHS compliant and lead-free?
Yes. The device features Pb-free lead plating and complies fully with RoHS Directive 2011/65/EU. The package uses matte tin-plated leads and meets JEDEC J-STD-020 moisture sensitivity level MSL-1, with unlimited floor life when stored at ≤30°C/85% RH.
What is the recommended mounting torque for the PG-TO220-2-1 package?
The datasheet specifies 0.7 Nm for M3 and M4 mounting screws. This torque ensures optimal thermal contact between the backside cathode tab and heatsink while avoiding mechanical damage to the package or solder joints. Use a calibrated torque screwdriver and apply thermal interface material with ≤0.1 mm bond line thickness.
Can IDH20G120C5XKSA1 be paralleled with other SiC diodes?
Yes, but only with matched units from the same wafer lot due to tight VF distribution. Parallel operation requires symmetrical PCB layout, identical trace lengths, and shared heatsink mounting to ensure current sharing within ±5%. Derate total current by 15% for two devices in parallel.
Does this diode require a gate resistor or driver circuit?
No. As a Schottky diode, IDH20G120C5XKSA1 has no gate terminal and operates passively - forward conduction begins automatically when anode voltage exceeds cathode voltage by ≥1.5 V. No external bias, driver, or timing control is needed.
IDH20G120C5XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 56A
- Voltage - Forward (Vf) (Max) @ If:
- 1.8 V @ 20 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 123 µA @ 1200 V
- Capacitance @ Vr, F:
- 1050pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-2-1
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDH20G120C5XKSA1 FAQ
1.How can I place an order for IDH20G120C5XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDH20G120C5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDH20G120C5XKSA1 reliable?
The price and inventory of IDH20G120C5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH20G120C5XKSA1 is usually 5 days.
3.What payment methods are accepted for IDH20G120C5XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH20G120C5XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDH20G120C5XKSA1?
IDH20G120C5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDH20G120C5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDH20G120C5XKSA1?
For technical support, including IDH20G120C5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH20G120C5XKSA1 requirements.
6.How does Aetrix verify that IDH20G120C5XKSA1 is sourced from the original manufacturer or authorized distributors?
All IDH20G120C5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH20G120C5XKSA1 meets industry standards.
7.What is the process for return or replacement of IDH20G120C5XKSA1?
All IDH20G120C5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDH20G120C5XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDH20G120C5XKSA1 part is unused and in its original packaging.
Return procedure for IDH20G120C5XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDH20G120C5XKSA1 Tags
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