Infineon Technologies IDH20G65C5XKSA2

Overview

IDH20G65C5XKSA2 from Infineon Technologies is a 650 V, 20 A silicon carbide Schottky diode in TO-220-2 package, designed for high-frequency, high-temperature power conversion. It delivers zero reverse recovery charge (Q_c = 29 nC at V_R = 400 V), forward voltage of 1.5–1.7 V at 20 A/25°C, and operates up to 175°C junction temperature. Used in PFC stages of industrial SMPS and solar inverters where thermal robustness and switching efficiency are critical.

For engineers reviewing the IDH20G65C5XKSA2 datasheet, IDH20G65C5XKSA2 pinout, IDH20G65C5XKSA2 application, or IDH20G65C5XKSA2 equivalent, key selection criteria include its 650 V V_RRM, 142 A surge current rating at 25°C, 0.6 K/W typical R_thJC, absence of reverse recovery, and compatibility with CoolMOS™ 650 V MOSFETs in hard-switched topologies.

Technical Context

This SiC Schottky diode employs Infineon's 5th Generation thinQ!™ technology with diffusion-soldered die and thin-wafer design, enabling lower Q_c × V_F figure-of-merit versus prior generations. Its unipolar conduction eliminates minority-carrier storage, resulting in temperature-independent switching behavior and no forward/reverse recovery transients.

The device is rated for repetitive 650 V blocking and supports dv/dt ruggedness up to 100 V/ns under specified conditions. Thermal performance is optimized via low-junction-to-case resistance (R_thJC = 0.6 K/W typ.) and validated avalanche testing per JESD22-A115 for 10 ms pulses.

Key Specifications

Pinout & Package

Package: PG-TO220-2 (2-pin, isolated tab), JEDEC-standard outline with M3 mounting screw torque specification (70 Ncm). Tab is electrically connected to cathode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D02060E and STPSC2006D, IDH20G65C5XKSA2 offers the lowest combined Q_c × V_F figure-of-merit (43.5 nC·V), best thermal resistance (0.6 K/W), and highest surge current (142 A), making it optimal for high-efficiency, high-reliability 650 V PFC and inverter designs.

Availability

IDH20G65C5XKSA2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, photovoltaic solar inverters, and uninterruptible power supplies requiring stable component supply, long lifecycle support, and traceable sourcing.

Supply support for IDH20G65C5XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IDH20G65C5XKSA2 belongs to the thinQ!™ 5th Generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power transistors in high-frequency, high-efficiency AC-DC and DC-AC conversion systems.

FAQ

Is IDH20G65C5XKSA2 pin-compatible with previous-generation Infineon SiC diodes?

No. While sharing the TO-220-2 package outline, IDH20G65C5XKSA2 uses a revised internal die structure and thermal interface optimized for Gen 5 thinQ!™ performance. Pin assignment matches earlier IDH20G65C variants (cathode on tab, anode on lead), but thermal resistance and surge ratings differ significantly-designers must verify layout thermal relief and transient stress margins.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies continuous forward current I_F = 20 A at T_C < 135°C. Operation above this temperature requires linear derating: at T_C = 150°C, maximum I_F drops to ~14 A. Exceeding 135°C case temperature continuously risks accelerated parameter drift and reduced lifetime, even if T_j remains ≤175°C.

Does IDH20G65C5XKSA2 require a gate resistor or snubber network?

No. As a Schottky diode, it has no gate terminal and exhibits no reverse recovery. However, a small RC snubber (e.g., 100 Ω + 1 nF) across the diode may still be used to damp high-frequency ringing caused by parasitic inductance in high-di/dt layouts-this is layout-dependent, not device-driven.

Can IDH20G65C5XKSA2 be used in parallel configurations?

Yes, but with strict layout symmetry: matched trace lengths, identical thermal paths, and individual current-sense resistors are required. Unlike Si diodes, SiC Schottky devices have positive V_F temperature coefficient, enabling natural current sharing-but mismatched thermal impedance will dominate imbalance. Parallel operation beyond two units is not recommended without empirical validation.